[특허]Power supply monitoring for an implantable device

Cyberonics, Inc.

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Power supply monitoring for an implantable device

특허상세정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	A61N-001/00
미국특허분류(USC)	607/029;
출원번호	US-0820841 (2010-06-22)
등록번호	US-8565881 (2013-10-22)
발명자 / 주소	Armstrong, Randolph K. Armstrong, Scott A. Inman, D. Michael Scott, Timothy L.
출원인 / 주소	Cyberonics, Inc.
대리인 / 주소	Cyberonics, Inc.
인용정보	피인용 횟수 : 0 인용 특허 : 95

초록
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A method and an apparatus for projecting an end of service (EOS) and/or an elective replacement indication (ERI) of a component in an implantable device is provided. The method comprises measuring the measured voltage of the energy storage device, and determining whether the measured voltage is less than a transition voltage. When the measured voltage is less than the transition voltage, determining a time period remaining until an end of service of the energy storage device is based upon a function of the measured voltage. When the measured voltage is greater than or equal to the transition voltage, determining a time period remaining until an end of service of the energy storage device is based upon a function of the total charge depleted. The transition voltage is a voltage associated with the transition point of non-linearity in the battery voltage depletion curve.

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1. A method comprising: estimating an amount of energy depleted during operation of an implantable medical device based on a first depletion amount and a second depletion amount, wherein the first depletion amount is calculated based on application of first electrical charge depletion rate information associated with an idle mode of the implantable medical device to one or more periods of operation of the implantable medical device in the idle mode, and wherein the second depletion amount is calculated based on application of second electrical charge depletion rate information associated with a stimulation mode of the implantable medical device to one or more periods of operation of the implantable medical device in the stimulation mode;determining whether a measured voltage across an energy storage device of the implantable medical device is greater than or equal to a transition voltage of the energy storage device;when the measured voltage is greater than or equal to the transition voltage, determining an amount of energy remaining in the energy storage device based on the estimated amount of energy depleted; andwhen the measured voltage is less than the transition voltage, determining the amount of energy remaining in the energy storage device based on a difference between the measured voltage and a voltage associated with end of service of the energy storage device. 2. The method of claim 1, wherein, when the measured voltage is less than the transition voltage, the amount of energy remaining is determined by dividing a first value by a second value, wherein the first value is determined based on a product of the difference between the measured voltage and the voltage associated with end of service of the energy storage device, an initial charge of the energy storage device, and a percentage of capacity of the energy storage device at the transition voltage, and wherein the second value is determined based on a product of an average current consumption rate and a difference between the transition voltage and the voltage associated with the end of service of the energy storage device. 3. The method of claim 1, wherein the transition voltage is approximately 2.6 volts. 4. The method of claim 1, wherein the second electrical charge depletion rate information is based at least in part on one or more stimulation parameters related to the stimulation mode. 5. The method of claim 4, wherein the one or more stimulation parameters include a pulse width, a pulse frequency, a pulse amplitude, or a combination thereof. 6. A system comprising: a processor; anda memory coupled to the processor, the memory storing instructions that are executable by the processor to cause the processor to: estimate an amount of energy depleted during operation of an implantable medical device based on a first depletion amount and a second depletion amount, wherein the first depletion amount is calculated based on application of first electrical charge depletion rate information associated with an inactive state of the implantable medical device to one or more periods of operation of the implantable medical device in the inactive state, and wherein the second depletion amount is calculated based on application of second electrical charge depletion rate information associated with an active state of the implantable medical device to one or more periods of operation of the implantable medical device in the active state;determine whether a measured voltage across an energy storage device of the implantable medical device is greater than or equal to a transition voltage of the energy storage device;when the measured voltage is greater than or equal to the transition voltage, determine an amount of energy remaining in the energy storage device based on the estimated amount of energy depleted; andwhen the measured voltage is less than the transition voltage, determine the amount of energy remaining in the energy storage device based on a difference between the measured voltage and a voltage associated with end of service of the energy storage device. 7. The system of claim 6, wherein the inactive state corresponds to a wait mode, a sleep mode, an idle mode, or a combination thereof. 8. The system of claim 7, wherein the implantable medical device does not deliver stimulation during the inactive state. 9. The system of claim 6, wherein the implantable medical device performs a status check, an update, or both during the active state. 10. The system of claim 6, wherein the memory further stores instructions that are executable by the processor to cause the processor to store the first electrical charge depletion rate information associated with the inactive state and the second electrical charge depletion rate information associated with the active state. 11. The system of claim 6, wherein the memory further stores instructions that are executable by the processor to cause the processor to determine a time period corresponding to the amount of energy remaining, wherein the time period is calculated based on an average current consumption rate. 12. The system of claim 11, wherein the memory further stores instructions that are executable by the processor to cause the processor to cause the implantable medical device to provide an indicator signal that indicates that the time period is less than or equal to a threshold time period. 13. The system of claim 12, wherein the threshold time period is approximately six months. 14. The system of claim 6, wherein the memory includes the first electrical charge depletion rate information and the second electrical charge depletion rate information, and wherein the memory further stores instructions that are executable by the processor to cause the processor to receive the first electrical charge depletion rate information and the second electrical charge depletion rate information from a device that is located externally to the implantable medical device. 15. The system of claim 6, wherein, when the measured voltage is less than the transition voltage, the amount of energy remaining is determined using linear approximation. 16. The system of claim 6, wherein the second electrical charge depletion rate information is based at least in part on lead impedance of a lead assembly, the lead assembly coupling an electrode assembly to a stimulation unit that is configured to provide an electrical signal. 17. The system of claim 6, wherein the estimated amount of energy depleted is determined based at least in part on a temperature correction factor, and wherein the temperature correction factor is based at least in part on a measured temperature of the energy storage device. 18. The system of claim 6, wherein, when the measured voltage is less than the transition voltage, the amount of energy remaining is determined using polynomial regression. 19. The system of claim 6, wherein the estimated amount of energy depleted is determined based at least in part on an impedance correction factor. 20. The system of claim 19, wherein the impedance correction factor is a constant impedance value. 21. The system of claim 6, wherein the active state corresponds to one or more stimulation modes. 22. The system of claim 21, wherein the second electrical charge depletion rate information is based at least in part on one or more stimulation parameters related to the one or more stimulation modes. 23. The system of claim 22, wherein the one or more stimulation parameters include a pulse width, a pulse frequency, a pulse amplitude, or a combination thereof. 24. The system of claim 6, wherein the transition voltage is approximately 2.6 volts.

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Power supply monitoring for an implantable device

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Power supply monitoring for an implantable device

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