The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power
The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.
대표청구항▼
1. A method of manufacturing a semiconductor device comprising: (a) providing a lead frame having a first chip mounting portion on which a first semiconductor chip is mounted, a second chip mounting portion on which a second semiconductor chip is mounted, a plurality of first suspension leads connec
1. A method of manufacturing a semiconductor device comprising: (a) providing a lead frame having a first chip mounting portion on which a first semiconductor chip is mounted, a second chip mounting portion on which a second semiconductor chip is mounted, a plurality of first suspension leads connected to the first chip mounting portion and a frame portion, and a plurality of second suspension leads connected to the second chip mounting portion and the frame portion, the first and second chip mounting portions being disposed side by side along a first direction; and(b) electrically connecting a pad of an obverse surface of the first semiconductor chip to the second chip mounting portion via a first metal conductor,wherein, in a plan view, the first metal conductor; has an elongated shape with its longest length extending along the first direction and the plurality of second suspension leads includes a suspension lead which; has an elongated shape with its longest length extending along a second direction perpendicular to the first direction. 2. The method of manufacturing the semiconductor device according to claim 1, wherein the plurality of second suspension leads includes a suspension lead which extends along the first direction in the plan view, and which is disposed at a side opposite a side at which the first chip mounting portion is disposed. 3. The method of manufacturing the semiconductor device according to claim 1, wherein the first metal conductor does not overlap with the plurality of second suspension leads in the plan view. 4. The method of manufacturing the semiconductor device according to claim 1, wherein the plurality of first suspension leads includes a suspension lead which extends along the first direction and a suspension lead which extends along the second direction in the plan view. 5. The method of manufacturing the semiconductor device according to claim 4, wherein the suspension lead which extends along the first direction is disposed at a side opposite a side at which the second chip mounting portion is disposed. 6. The method of manufacturing the semiconductor device according to claim 4, wherein the first metal conductor does not overlap with the plurality of first suspension leads in the plan view. 7. The method of manufacturing the semiconductor device according to claim 2, wherein the lead frame has a third chip mounting portion on which a third semiconductor chip is mounted, and a plurality of third suspension leads connected to the third chip mounting portion and the frame portion, andwherein the third chip mounting portion is disposed such that the second chip mounting portion is disposed between the third chip mounting portion and the suspension lead of the plurality of second suspension leads which extends along the first direction in the plan view. 8. The method of manufacturing the semiconductor device according to claim 7, wherein the plurality of the third suspension leads includes a suspension lead which extends in the first direction and a suspension lead which extends in the second direction,wherein the suspension lead which extends along the first direction is disposed at a side opposite a side at which the second chip mounting portion is disposed, andwherein the suspension lead which extends along the second direction is disposed at a side opposite a side at which the first chip mounting portion is disposed. 9. The method of manufacturing the semiconductor device according to claim 7, further comprising electrically connecting the third semiconductor chip to the first and second semiconductor chips via a first wire and a second wire, respectively. 10. The method of manufacturing the semiconductor device according to claim 1, wherein the first metal conductor is a metal plate. 11. The method of manufacturing the semiconductor device according to claim 1, further comprising: (c) after the step (b), forming a sealing body resin-sealing the first and second semiconductor chips; and(d) after the step (c), separating the sealing body from the frame portion by cutting the plurality of first and second suspension leads. 12. The method of manufacturing the semiconductor device according to claim 11, wherein after the step (d), lead parts of the plurality of first and second suspension leads are exposed from the sealing body.
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이 특허에 인용된 특허 (11)
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