초록 ▼

A method for forming an ultra-shallow boron dopant region in a substrate is provided. In one embodiment, the method includes depositing, by atomic layer deposition (ALD), a boron dopant layer in direct contact with the substrate, where the boron dopant layer contains an oxide, a nitride, or an oxyni

A method for forming an ultra-shallow boron dopant region in a substrate is provided. In one embodiment, the method includes depositing, by atomic layer deposition (ALD), a boron dopant layer in direct contact with the substrate, where the boron dopant layer contains an oxide, a nitride, or an oxynitride formed by alternating gaseous exposures of boron amide precursor or an organoboron precursor and a reactant gas. The method further includes patterning the dopant layer and forming an ultra-shallow dopant region in the substrate by diffusing boron from the boron dopant layer into the substrate by a thermal treatment.

대표청구항 ▼

1. A method for forming an ultra-shallow boron (B) dopant region in a substrate, the method comprising: depositing, by atomic layer deposition (ALD), a boron dopant layer in direct contact with the substrate, the boron dopant layer containing (i) a nitride, or (ii) an oxynitride, wherein (i) and (ii

1. A method for forming an ultra-shallow boron (B) dopant region in a substrate, the method comprising: depositing, by atomic layer deposition (ALD), a boron dopant layer in direct contact with the substrate, the boron dopant layer containing (i) a nitride, or (ii) an oxynitride, wherein (i) and (ii) are formed by alternating gaseous exposures of a boron amide precursor or an organoboron precursor and a reactant gas, wherein in (i) the reactant gas includes NH3, and wherein in (ii) the reactant gas includes a) H2O, O2, or O3, and NH3, or b) NO, NO2, or N2O, and optionally one or more of H2O, O2, O3, and NH3;patterning the boron dopant layer; andforming the ultra-shallow boron dopant region in the substrate by diffusing boron from the patterned boron dopant layer into the substrate by a thermal treatment. 2. The method of claim 1, further comprising removing the patterned boron dopant layer from the substrate. 3. The method of claim 1, further comprising depositing a cap layer on the boron dopant layer or on the patterned boron dopant layer. 4. The method of claim 1, wherein the boron dopant layer contains the nitride. 5. The method of claim 1, wherein the boron dopant layer contains the oxynitride. 6. The method of claim 1, wherein a thickness of the boron dopant layer is 4 nm or less. 7. The method of claim 1, wherein the substrate includes a patterned mask layer defining a dopant window above the substrate and wherein the boron dopant layer is deposited in direct contact with the substrate in the dopant window. 8. The method of claim 1, wherein the substrate comprises Si, Ge, In, Ga, As, Sb, GaAs, InGaAs, InGaSb, SixGe1-x wherein 0