초록 ▼

A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the process

A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

대표청구항 ▼

1. A processing chamber comprising: a chamber body defining at least a first processing region and a second processing region, wherein the chamber body has:a substrate support in each processing region;a first entry port formed above the first processing region and coupled to a first gas distributio

1. A processing chamber comprising: a chamber body defining at least a first processing region and a second processing region, wherein the chamber body has:a substrate support in each processing region;a first entry port formed above the first processing region and coupled to a first gas distribution assembly disposed over a top portion of the first processing region;a second entry port formed above the second processing region and coupled to a second gas distribution assembly disposed over a top portion of the second processing region;a first vertical passage extending downward through a chamber wall;one or more first cross channels open to a bottom portion of the first processing region and intersecting the first vertical passage;a second vertical passage extending downward through the chamber wall; andone or more second cross channels open to a bottom portion of the second processing region and intersecting the second vertical passage;a remote plasma source configured to provide a cleaning plasma towards the top portions and/or the bottom portions of the first and second processing regions;a first gas conduit connecting the remote plasma source to the first and second entry ports; anda valve having an inlet coupled to the first gas conduit and at least one outlet coupled to the first and second vertical passages, wherein opening of the valve selectively diverts a portion of the cleaning plasma from the remote plasma source to the bottom portions of the first and second processing regions for introducing the cleaning plasma to a lower side of the substrate support. 2. The processing chamber of claim 1, further comprising a processing gas source coupled to the first gas conduit. 3. The processing chamber of claim 1, further comprising a second gas conduit connecting between the valve and the first and second vertical passages. 4. The processing chamber of claim 1, wherein the valve comprises: a valve body;a movable flapper housed by the valve body; anda coupling mechanism disposed outside the valve body operable to rotate the movable flapper. 5. The processing chamber of claim 4, wherein the flapper comprises a flow-obstructing plate; andan outer body attached to the flow-obstructing plate, wherein at least one magnet is encased in the outer body of the flapper. 6. The processing chamber of claim 5, wherein the valve further comprises a bearing interfacing between an end of the flow-obstructing plate and a wall of the valve body to facilitate rotation of the flapper. 7. The processing chamber of claim 6, wherein the valve further comprises a seal cup securely fixed to the valve body, and the outer body of the flapper is cylindrical and surrounded by the seal cup. 8. The process chamber of claim 7, wherein the valve further comprises an additional bearing interfacing between the outer body and the seal cup. 9. The processing chamber of claim 7, wherein the coupling mechanism comprises a U-shaped body having magnetized end portions, and the coupling mechanism is positioned outside the seal cup with the two magnetized end portions facing two opposite poles of the magnet encased in the outer body. 10. The processing chamber of claim 9, wherein the valve further comprises an actuator mounted to the valve, the actuator is one of a solenoid, air motor, electric motor and pneumatic cylinder, and the actuator rotates the coupling mechanism in a controlled manner. 11. The processing chamber of claim 4, wherein the coupling mechanism is configured to rotate the flapper through magnetic interaction. 12. The processing chamber of claim 1, further comprising a source of at least one of NF3, F2, SF6, Cl2, CF4, C2F6, CCl4 or C2Cl6 coupled to the remote plasma source. 13. The processing chamber of claim 1, wherein the first and second cross channels are oriented to produce a substantially inward flow of gases into the corresponding processing regions. 14. A substrate processing system comprising: a loadlock chamber;a transfer chamber coupled to the loadlock chamber;anda processing chamber coupled to the transfer chamber, wherein the processing chamber comprises:a substrate support in each processing region;a first entry port formed above the first processing region and coupled to a first gas distribution assembly disposed over a top portion of the first processing region;a second entry port formed above the second processing region and coupled to a second gas distribution assembly disposed over a top portion of the second processing region;a first vertical passage extending downward through a chamber wall;one or more first cross channels open to a bottom portion of the first processing region and intersecting the first vertical passage;a second vertical passage extending downward through the chamber wall; andone or more second cross channels open to a bottom portion of the second processing region and intersecting the second vertical passage;a remote plasma source configured to provide a cleaning plasma towards the top portions and/or the bottom portions of the first and second processing regions;a first gas conduit connecting the remote plasma source to the first and second entry ports; anda valve having an inlet coupled to the first gas conduit and at least one outlet coupled to the first and second vertical passages, wherein opening of the valve selectively diverts a portion of the cleaning plasma from the remote plasma source to the bottom portions of the first and second processing regions for introducing the cleaning plasma to a lower side of the substrate support. 15. The substrate processing system of claim 14, wherein the processing chamber further comprises a processing gas source coupled to the first gas conduit. 16. The substrate processing system of claim 14, wherein the processing chamber further comprises a second gas conduit connecting between the valve and the first and second vertical passages. 17. The substrate processing system of claim 14, wherein the valve comprises: a valve body;a movable flapper housed by the valve body; anda coupling mechanism disposed outside the valve body operable to rotate the movable flapper. 18. The substrate processing system of claim 17, wherein the flapper comprises a flow-obstructing plate; andan outer body attached to the flow-obstructing plate, wherein at least one magnet is encased in the outer body of the flapper. 19. The substrate processing system of claim 18, wherein the coupling mechanism is configured to rotate the flapper through magnetic interaction. 20. The substrate processing system of claim 14, further comprising a source of at least one of NF3, F2, SF6, Cl2, CF4, C2F6, CCl4 or C2Cl6 coupled to the remote plasma source.