[특허]Chemical mechanical planarization composition, system, and method of use

Chemical mechanical planarization composition, system, and method of use 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	B24B-007/04
출원번호	US-0613646 (2006-12-20)
등록번호	US-8591764 (2013-11-26)
발명자 / 주소	Gagliardi, John J. Savu, Patricia M.
출원인 / 주소	3M Innovative Properties Company
대리인 / 주소	Baker, James A.
인용정보	피인용 횟수 : 0 인용 특허 : 23

초록 ▼

The disclosure relates to chemical mechanical planarization (CMP) polishing compositions including proline and a fluorochemical surfactant. The wafer polishing composition may be used as a solution substantially free of abrasive particles, the composition of which can be adjusted to control Oxide Removal Rate and oxide over nitride Selectivity Ratio in Shallow Trench Isolation (STI) processing of semiconductor wafers using a fixed abrasive CMP process. In certain embodiments, the disclosure provides a working liquid for fixed abrasive CMP including proline and a fluorochemical surfactant at a pH from 9 to 11. When used in a fixed abrasive CMP system and method for STI, exemplary working liquids may yield an Oxide Removal Rate of at least 500 angstroms per minute, and an oxide over nitride Selectivity Ratio of at least 5.

대표청구항 ▼

1. A working liquid for fixed abrasive chemical mechanical planarization comprising: proline, wherein the concentration of proline is from 1.0% to 4% on a weight basis; anda fluorochemical surfactant having the formula R1CH2CH2O(CH2CH2O)xH, where R1 is F(CF2CF2)3-8 and x is an integer greater than 1;wherein the working liquid for fixed abrasive chemical mechanical planarization is substantially free of abrasive particles, and wherein the proline and the fluorochemical surfactant are each present in an amount effective to obtain an Oxide Removal Rate of at least 500 angstroms/minute (Å/min) and a Selectivity Ratio of at least 5 when the working liquid is used in chemical mechanical planarization of a wafer having a first region comprising silicon dioxide and a second region comprising silicon nitride. 2. The working liquid of claim 1, wherein the Oxide Removal Rate is at least 700 Å/min. 3. The working liquid of claim 1, wherein the Selectivity Ratio is at least 30. 4. The working liquid of claim 1, wherein the working liquid exhibits a pH from 9 to 11. 5. The working liquid of claim 1, wherein the working liquid exhibits a pH from 10 to 10.5. 6. The working liquid of claim 1, wherein the fluorochemical surfactant is a nonionic surfactant. 7. The working liquid of claim 1, wherein R1 is F(CF2CF2)5-8. 8. The working liquid of claim 1, wherein the concentration of the fluorochemical surfactant is greater than 0.005% and less than 1.0% on a weight basis. 9. The working liquid of claim 1, wherein the concentration of the fluorochemical surfactant is from 0.2% to 0.6% on a weight basis. 10. The working liquid of claim 1, wherein the concentration of proline is from 2.0% to 3% on a weight basis. 11. A method of chemical mechanical planarization of a wafer comprising: providing a wafer having a first surface region comprising a dielectric oxide, and a second surface region comprising a barrier nitride;contacting the first and second surface regions with a three-dimensional, textured, fixed abrasive article comprising precisely shaped abrasive composites further comprising a plurality of abrasive particles and a binder; andrelatively moving the wafer and the fixed abrasive article in the presence of a liquid medium comprising proline and a fluorochemical surfactant, wherein a concentration of proline in the liquid medium is from 1.0% to 5% on a weight basis. 12. The method of claim 11, wherein the liquid medium exhibits a pH from 9 to 11. 13. The method of claim 11, wherein the fluorochemical surfactant has the formula R1CH2CH2O(CH2CH2O)xH, where R1 is F(CF2CF2)5-8. 14. The method of claim 11, wherein a concentration of the fluorochemical surfactant in the liquid medium is greater than 0.005% and less than 1.0% on a weight basis. 15. The method of claim 11, wherein the Oxide Removal Rate is at least 700 Å/min. 16. The method of claim 15, wherein the Selectivity Ratio is at least 5.

이 특허에 인용된 특허 (23)

Messner Robert P. ; Kessel Carl R. ; Moore George G., Abrasive articles comprising a fluorochemical agent for wafer surface modification.
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Uchida, Takeshi; Matsuzawa, Jun; Hoshino, Tetsuya; Kamigata, Yasuo; Terazaki, Hiroki; Honma, Yoshio; Kondoh, Seiichi, Abrasive liquid for metal and method for polishing.
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Aoki, Hidemitsu; Koito, Tatsuya; Nakabeppu, Kenichi, Anticorrosive agent.
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Kaufman Vlasta Brusic ; Kistler Rodney C., Chemical mechanical polishing slurry useful for copper substrates.
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Her, Yie-Shein; Srinivasan, Ramanathan; Babu, Suryadevara; Ramarajan, Suresh, Chemical-mechanical polishing slurry and method.
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Lee, Jong-won; Hong, Chang-ki; Lee, Jae-dong, Chemical/mechanical polishing slurry and chemical mechanical polishing method using the same.
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Hosali Sharath D. ; Sethuraman Anantha R. ; Wang Jiun-Fang ; Cook Lee Melbourne, Composition and method for polishing a composite of silica and silicon nitride.
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Swidler Ronald (Palo Alto CA) Woodhall Edward W. (Los Altos CA), Method of abarding using surface abrasion compositions.
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Bruxvoort Wesley J. ; Culler Scott R. ; Ho Kwok-Lun ; Kaisaki David A. ; Kessel Carl R. ; Klun Thomas P. ; Kranz Heather K. ; Messner Robert P. ; Webb Richard J. ; Williams Julia P., Method of modifying an exposed surface of a semiconductor wafer.
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Kaisaki David A. ; Kranz Heather K. ; Wood Thomas E. ; Hardy L. Charles, Method of planarizing the upper surface of a semiconductor wafer.
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Carter,Phillip W; Johns,Timothy P, Method of polishing a silicon-containing dielectric.
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Takeuchi Yoshiaki (Ehime JPX) Yamamoto Koji (Ehime JPX) Umezaki Hiroshi (Ehime JPX), Polishing composition for metallic material.
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Grumbine Steven K. ; Streinz Christopher C. ; Hoglund Eric W.G., Polishing composition including an inhibitor of tungsten etching.
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Robert G. Swisher ; Alan E. Wang, Polishing pad.
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Prabhu,Gopalakrishna B.; Osterheld,Thomas H.; Leung,Garlen C.; Zhong,Adam H.; McReynolds,Peter; Tao,Yi Yung; Menk,Gregory E.; Mohan,Vasanth N.; Lee,Christopher Heung Gyun, Polishing processes for shallow trench isolation substrates.
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Ronay, Maria, Selective polishing with slurries containing polyelectrolytes.
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Ramanathan Srinivasan ; Suryadevara V. Babu ; William G. America ; Yie-Shein Her, Slurry for chemical mechanical polishing silicon dioxide.
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Srinivasan, Ramanathan; Babu, Suryadevara V.; America, William G.; Her, Yie-Shein, Slurry for chemical mechanical polishing silicon dioxide.
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Srinivasan, Ramanathan; Babu, Suryadevara V.; America, William G.; Her, Yie-Shein, Slurry for chemical mechanical polishing silicon dioxide.
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Srinivasan,Ramanathan; Babu,Suryadevara V.; America,William G.; Her,Yie Shein, Slurry for chemical mechanical polishing silicon dioxide.
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Pieper Jon R. (Lindstrom MN) Olson Richard M. (Stillwater MN) Mucci Michael V. (Hudson WI) Holmes Gary L. (Vadnais Heights MN) Heiti Robert V. (St. Paul MN), Structured abrasive article.
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Mueller,Brian L.; Chamberlain,Jeffery P.; Schroeder,David J., System for the preferential removal of silicon oxide.
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Rueb,Christopher J.; Webb,Richard J.; Velamakanni,Bhaskar V., Wafer planarization composition and method of use.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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Chemical mechanical planarization composition, system, and method of use 원문보기

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Chemical mechanical planarization composition, system, and method of use 원문보기

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