초록 ▼

A temperature detection system includes a power semiconductor device, a chip temperature detection device for detecting a temperature of the power semiconductor device, loss-related characteristic value acquiring means for acquiring a loss-related characteristic value that is a characteristic to dec

A temperature detection system includes a power semiconductor device, a chip temperature detection device for detecting a temperature of the power semiconductor device, loss-related characteristic value acquiring means for acquiring a loss-related characteristic value that is a characteristic to decide a loss of the power semiconductor device, difference value calculating means for calculating, from the loss-related characteristic value, a difference value between the temperature of the power semiconductor device and a temperature detected by the chip temperature detection device, a corrected temperature signal generating part for generating a corrected temperature signal by adding the temperature detected by the chip temperature detection device and the difference value, and an output part for outputting the corrected temperature signal to the outside.

대표청구항 ▼

1. A temperature detection system comprising: a power semiconductor device;chip temperature detection means for detecting a temperature of the power semiconductor device, the chip temperature detection means being coupled to the power semiconductor device;power loss-related characteristic value acqu

1. A temperature detection system comprising: a power semiconductor device;chip temperature detection means for detecting a temperature of the power semiconductor device, the chip temperature detection means being coupled to the power semiconductor device;power loss-related characteristic value acquiring means for measuring at least one of a current and a voltage of the power semiconductor device to acquire a power loss-related characteristic value of the power semiconductor device, the power loss-related characteristic value including at least one of a driving frequency, a current value, a voltage value, and a power value of the power semiconductor device;difference value calculating means for calculating a difference value between an actual temperature of the power semiconductor device and the temperature of the power semiconductor device detected by the chip temperature detection means, based on the power loss-related characteristic value and a stored correlation that relates the power loss-related characteristic value to the actual temperature and the temperature detected by the chip temperature detection means;corrected temperature signal generating means for generating a corrected temperature signal by adding the temperature detected by the chip temperature detection means and the difference value calculated based on the power loss-related characteristic value of the power semiconductor device; andoutput means for outputting the corrected temperature signal. 2. A temperature detection system comprising: a power semiconductor device;chip temperature detection means for detecting a temperature of the power semiconductor device, the chip temperature detection means being coupled to the power semiconductor device;power loss-related characteristic value acquiring means for measuring at least one of a current and a voltage of the power semiconductor device to acquire a power loss-related characteristic value of the power semiconductor device, the power loss-related characteristic value including at least one of a driving frequency, a current value, a voltage value, and a power value of the power semiconductor device;difference value calculating means for calculating, based on the power loss-related characteristic value, a difference value between an actual temperature of the power semiconductor device and the temperature of the power semiconductor device detected by the chip temperature detection means;corrected temperature signal generating means for generating a corrected temperature signal by adding the temperature detected by the chip temperature detection means and the difference value calculated based on the power loss-related characteristic value of the power semiconductor device; andoutput means for outputting the corrected temperature signal, whereinthe difference value calculating means further comprisesamount of change calculating means for calculating an amount of change from a previous value with respect to individual power loss-related characteristic values,ranking means for ranking the amounts of change in descending order to make the amounts of change relatively comparable,individual difference value calculating means for calculating an individual difference value between the actual temperature of the power semiconductor device and the temperature detected by the chip temperature detection means each time a power loss-related characteristic value is obtained, andindividual difference value weighting means for calculating a product of the individual difference values and a weight according to a weighting function for returning larger values according to a higher ranking, andthe difference value is a sum of the products calculated by the individual difference value weighting means. 3. A temperature detection system comprising: a power semiconductor device;chip temperature detection means for detecting a temperature of the power semiconductor device, the chip temperature detection means being coupled to the power semiconductor device;power loss-related characteristic value acquiring means for measuring at least one of a current and a voltage of the power semiconductor device to acquire a power loss-related characteristic value of the power semiconductor device, the power loss-related characteristic value including at least one of a driving frequency, a current value, a voltage value, and a power value of the power semiconductor device;difference value calculating means for calculating, based on the power loss-related characteristic value, a difference value between an actual temperature of the power semiconductor device and the temperature of the power semiconductor device detected by the chip temperature detection means;corrected temperature signal generating means for generating a corrected temperature signal by adding the temperature detected by the chip temperature detection means and the difference value calculated based on the power loss-related characteristic value of the power semiconductor device; andoutput means for outputting the corrected temperature signal, whereinthe difference value calculating means further comprisesamount of change calculating means for calculating an amount of change from a previous value with respect to individual power loss-related characteristic values,amount of change maximum characteristic identifying means for making the amounts of change relatively comparable to identify an individual power loss-related characteristic value having a maximum amount of change, andspecific difference value calculating means for calculating the difference value from the individual power loss-related characteristic value identified by the amount of change maximum characteristic identifying means. 4. A temperature detection system comprising: a power semiconductor device;chip temperature detection means for detecting a temperature of the power semiconductor device, the chip temperature detection means being coupled to the power semiconductor device;power loss-related characteristic value acquiring means for measuring at least one of a current and a voltage of the power semiconductor device to acquire a power loss-related characteristic value of the power semiconductor device, the power loss-related characteristic value including at least one of a driving frequency, a current value, a voltage value, and a power value of the power semiconductor device;difference value calculating means for calculating, based on the power loss-related characteristic value, a difference value between an actual temperature of the power semiconductor device and the temperature of the power semiconductor device detected by the chip temperature detection means;corrected temperature signal generating means for generating a corrected temperature signal by adding the temperature detected by the chip temperature detection means and the difference value calculated based on the power loss-related characteristic value of the power semiconductor device; andoutput means for outputting the corrected temperature signal;a filter arranged in a transport pathway of the corrected temperature signal and including a variable resistor and a capacitor;first time constant setting means for setting a time constant of the filter as a first time constant;second time constant setting means for setting the time constant of the filter as a second time constant larger than the first time constant; andswitching means for performing switching to use the first time constant setting means when the power loss-related characteristic value is equal to or more than a predetermined value and to use the second time constant setting means when the power loss-related characteristic value is less than the predetermined value. 5. A temperature detection system comprising: a power semiconductor device;chip temperature detection means for detecting a temperature of the power semiconductor device, the chip temperature detection means being coupled to the power semiconductor device;power loss-related characteristic value acquiring means for measuring at least one of a current and a voltage of the power semiconductor device to acquire a power loss-related characteristic value of the power semiconductor device, the power loss-related characteristic value including at least one of a driving frequency, a current value, a voltage value, and a power value of the power semiconductor device;difference value calculating means for calculating, based on the power loss-related characteristic value, a difference value between an actual temperature of the power semiconductor device and the temperature of the power semiconductor device detected by the chip temperature detection means;corrected temperature signal generating means for generating a corrected temperature signal by adding the temperature detected by the chip temperature detection means and the difference value calculated based on the power loss-related characteristic value of the power semiconductor device; andoutput means for outputting the corrected temperature signal; andamplification means arranged in a transport pathway of the corrected temperature signal for amplifying the corrected temperature signal to a predetermined voltage;wherein the amplification means further comprisesfirst amplification means for amplifying with a first temperature resolution,second amplification means for amplifying with a second temperature resolution higher than the first temperature resolution, andswitching means for performing switching to use the first amplification means when the power loss-related characteristic value is equal to or more than a predetermined value and to use the second amplification means when the power loss-related characteristic value is less than the predetermined value. 6. The temperature detection system according to claim 4, wherein the power loss-related characteristic value is the corrected temperature signal. 7. The temperature detection system according to claim 4, wherein the power loss-related characteristic value is an amount of change from a previous value of the corrected temperature signal. 8. The temperature detection system according to claim 4, wherein the power loss-related characteristic value is a driving frequency of the power semiconductor device. 9. A temperature detection system comprising: a power semiconductor device;chip temperature detection means for detecting a temperature of the power semiconductor device, the chip temperature detection means being coupled to the power semiconductor device;power loss-related characteristic value acquiring means for measuring at least one of a current and a voltage of the power semiconductor device to acquire a power loss-related characteristic value of the power semiconductor device, the power loss-related characteristic value including at least one of a driving frequency, a current value, a voltage value, and a power value of the power semiconductor device;difference value calculating means for calculating, based on the power loss-related characteristic value, a difference value between an actual temperature of the power semiconductor device and the temperature of the power semiconductor device detected by the chip temperature detection means;corrected temperature signal generating means for generating a corrected temperature signal by adding the temperature detected by the chip temperature detection means and the difference value calculated based on the power loss-related characteristic value of the power semiconductor device; andoutput means for outputting the corrected temperature signal, whereinthe power loss-related characteristic value is a current value of the power semiconductor device, andthe power loss-related characteristic value acquiring means includes a current sensor for measuring the current value of the power semiconductor device. 10. A temperature detection system comprising: a power semiconductor device;chip temperature detection means for detecting a temperature of the power semiconductor device, the chip temperature detection means being coupled to the power semiconductor device;power loss-related characteristic value acquiring means for measuring at least one of a current and a voltage of the power semiconductor device to acquire a power loss-related characteristic value of the power semiconductor device, the power loss-related characteristic value including at least one of a driving frequency, a current value, a voltage value, and a power value of the power semiconductor device;difference value calculating means for calculating, based on the power loss-related characteristic value, a difference value between an actual temperature of the power semiconductor device and the temperature of the power semiconductor device detected by the chip temperature detection means;corrected temperature signal generating means for generating a corrected temperature signal by adding the temperature detected by the chip temperature detection means and the difference value calculated based on the power loss-related characteristic value of the power semiconductor device; andoutput means for outputting the corrected temperature signal, whereinthe power loss-related characteristic value is a voltage value of the power semiconductor device, andthe power loss-related characteristic value acquiring means includes a voltage sensor for measuring the voltage value of the power semiconductor device. 11. A temperature detection system comprising: a power semiconductor device;chip temperature detection means for detecting a temperature of the power semiconductor device, the chip temperature detection means being coupled to the power semiconductor device;power loss-related characteristic value acquiring means for measuring at least one of a current and a voltage of the power semiconductor device to acquire a power loss-related characteristic value of the power semiconductor device, the power loss-related characteristic value including at least one of a driving frequency, a current value, a voltage value, and a power value of the power semiconductor device,difference value calculating means for calculating, based on the power loss-related characteristic value, a difference value between an actual temperature of the power semiconductor device and the temperature of the power semiconductor device detected by the chip temperature detection means;corrected temperature signal generating means for generating a corrected temperature signal by adding the temperature detected by the chip temperature detection means and the difference value calculated based on the power loss-related characteristic value of the power semiconductor device; andoutput means for outputting the corrected temperature signal, whereinthe power loss-related characteristic value is a power value of the power semiconductor device, andthe power loss-related characteristic value acquiring means includes a power value sensor for measuring the power value of the power semiconductor device. 12. A temperature detection system comprising: a power semiconductor device;chip temperature detection means for detecting a temperature of the power semiconductor device, the chip temperature detection means being coupled to the power semiconductor device;power loss-related characteristic value acquiring means for measuring at least one of a current and a voltage of the power semiconductor device to acquire a power loss-related characteristic value of the power semiconductor device, the power loss-related characteristic value including at least one of a driving frequency, a current value, a voltage value, and a power value of the power semiconductor device;difference value calculating means for calculating, based on the power loss-related characteristic value, a difference value between an actual temperature of the power semiconductor device and the temperature of the power semiconductor device detected by the chip temperature detection means;corrected temperature signal generating means for generating a corrected temperature signal by adding the temperature detected by the chip temperature detection means and the difference value calculated based on the power loss-related characteristic value of the power semiconductor device; andoutput means for outputting the corrected temperature signal; andoverheat protection means for giving a warning to an external device when the corrected temperature signal is more than a predetermined value. 13. A temperature detection system comprising: a power semiconductor device;chip temperature detection means for detecting a temperature of the power semiconductor device, the chip temperature detection means being coupled to the power semiconductor device;power loss-related characteristic value acquiring means for measuring at least one of a current and a voltage of the power semiconductor device to acquire a power loss-related characteristic value of the power semiconductor device, the power loss-related characteristic value including at least one of a driving frequency, a current value, a voltage value, and a power value of the power semiconductor device;difference value calculating means for calculating, based on the power loss-related characteristic value, a difference value between an actual temperature of the power semiconductor device and the temperature of the power semiconductor device detected by the chip temperature detection means;corrected temperature signal generating means for generating a corrected temperature signal by adding the temperature detected by the chip temperature detection means and the difference value calculated based on the power loss-related characteristic value of the power semiconductor device;output means for outputting the corrected temperature signal;predictive value calculating means for calculating, from the corrected temperature signal and the power loss-related characteristic value, a predictive value of temperature after a predetermined time has elapsed; andoverheat protection means for giving a warning to an external device when the predictive value is more than a predetermined value. 14. The temperature detection system according to claim 4, wherein the switching means comprisesplural power loss-related characteristic value acquiring means for acquiring two or more of the power loss-related characteristic values including the driving frequency, the current value, the voltage value, and the power value of the power semiconductor device,amount of change calculating means for calculating an amount of change from a previous value with respect to an individual power loss-related characteristic value of each of the two or more power loss-related characteristic values,ranking means for relatively comparing the individual loss-related characteristic values to rank the individual loss-related characteristic values,weighting calculation means for calculating a product of each individual loss-related characteristic value and a weight according to a weighting function for returning larger values according to a higher ranking, andsum calculation means for calculating a sum of power loss-related characteristic values as a sum of products calculated by the weighting calculation part, andthe power loss-related characteristic value is the sum of power loss-related characteristic values. 15. A temperature detection system comprising: a power semiconductor device;a chip temperature detection unit configured to detect a temperature of the power semiconductor device, the chip temperature detection unit being coupled to the power semiconductor device;a power loss-related characteristic value acquiring unit configured to measure at least one of a current and a voltage of the power semiconductor device to acquire a power loss-related characteristic value of the power semiconductor device, the power loss-related characteristic value including at least one of, the power loss-related characteristic value including at least one of a driving frequency, a current value, a voltage value, and a power value of the power semiconductor device;a difference value calculating unit configured to calculate a difference value between an actual temperature of the power semiconductor device and the temperature of the power semiconductor device detected by the chip temperature detection unit, based on the power loss-related characteristic value and a stored correlation that relates the power loss-related characteristic value to the actual temperature and the temperature detected by the chip temperature detection unit;a corrected temperature signal generating unit configured to generate a corrected temperature signal by adding the temperature detected by the chip temperature detection unit and the difference value calculated based on the power loss-related characteristic value; and an output unit configured to output the corrected temperature signal.