초록 ▼

One aspect of the present invention is a deposition solution to deposit metals and metal alloys such as for fabrication of electronic devices. According to one embodiment, the deposition solution comprises metal ions and a pH adjustor. The pH adjustor comprises a functional group having a general fo

One aspect of the present invention is a deposition solution to deposit metals and metal alloys such as for fabrication of electronic devices. According to one embodiment, the deposition solution comprises metal ions and a pH adjustor. The pH adjustor comprises a functional group having a general formula (R1R2N)(R3R4N)C═N—R5 where: N is nitrogen; C is carbon; and R1, R2, R3, R4, and R5 are the same or different and represent hydrogen, alkyl group, aryl group, or alkylaryl group. Another aspect of the presented invention is a method of preparing deposition solutions. Still another aspect of the present invention is a method of fabricating electronic devices.

대표청구항 ▼

1. A deposition solution to form a metal on a substrate, the solution comprising metal ions and a pH adjustor, the pH adjustor comprising a functional group having a general formula (R1R2N)(R3R4N)C═N—R5 where:N is nitrogen;C is carbon; andR1, R2, R3, R4, and R5 are the same or different and represen

1. A deposition solution to form a metal on a substrate, the solution comprising metal ions and a pH adjustor, the pH adjustor comprising a functional group having a general formula (R1R2N)(R3R4N)C═N—R5 where:N is nitrogen;C is carbon; andR1, R2, R3, R4, and R5 are the same or different and represent hydrogen, alkyl group, aryl group, or alkylaryl group so as to effect a pH from 4.5 to 14 for the deposition solution; and the deposition solution being alkali-metal free. 2. The deposition solution of claim 1, wherein the alkyl group comprises a general formula CnH2n+1 and where the aryl group and the alkylaryl group are selected from the group consisting of benzyl and benzylalkyl of formulas C6H5 and C6H5—CnH2n+1, respectively. 3. The deposition solution of claim 1, wherein the pH adjustor comprises guanidine, guanidine derivative, or mixtures thereof. 4. The deposition solution of claim 1, wherein the pH adjustor comprises tetramethylguanidine, triazabicyclodecene, or mixtures thereof. 5. The deposition solution of claim 1, wherein the pH adjustor effects a pH from 8 to 11.5 for the deposition solution. 6. The deposition solution of claim 1, wherein the metal ions comprise antimony, arsenic, cadmium, chromium, copper, gold, indium, iridium, iron, lead, manganese, molybdenum, osmium, palladium, platinum, rhodium, ruthenium, silver, tin, tungsten, zinc, or mixtures thereof. 7. The deposition solution of claim 1, wherein the metal ions comprise ions of cobalt and/or nickel. 8. The deposition solution of claim 1, wherein the metal ions are introduced into the deposition solution as dissolved metal ion salt selected from the group consisting of a metal sulfate, a metal chloride, a metal hydroxide, and mixtures thereof. 9. The deposition solution of claim 1, further comprising a reducing agent to form the metal by electroless deposition. 10. The deposition solution of claim 1, further comprising a reducing agent to form the metal by electroless deposition, the reducing agent comprising at least one of alkyl, dialkyl and trialkyl amine boranes of the general formula R1R2R3NH3−nBH3, where R1, R2, and R3 comprise the same or different alkyl groups and n is the number of alkyl groups attached to the amine boranes, where n can be 0, 1, 2, and 3. 11. The deposition solution of claim 1, further comprising a reducing agent to form the metal by electroless deposition, the reducing agent comprising at least one of hypophosphite, hydrazine, and dimethylamine borane. 12. The deposition solution of claim 1, further comprising a reducing agent to form the metal by electroless deposition, the reducing agent comprising hypophosphite introduced into the deposition solution in the form of a compound selected from the group consisting of hypophosphorous acid, an alkali-metal-free salt of hypophosphorous acid, and a complex of a hypophosphorous acid. 13. The deposition solution of claim 1, further comprising a reducing agent to form the metal by electroless deposition, the reducing agent comprising hypophosphite dimethylamine borane. 14. The deposition solution of claim 1, further comprising a reducing agent to form the metal by electroless deposition, the reducing agent comprising one or more metal ion reducing agents. 15. The deposition solution of claim 1, further comprising at least one complexing agent selected from the group consisting of citrate, tartrate, glycine, pyro-phosphate, and ethylenediaminetetraacetic acid, the complexing agent being introduced into the deposition solution as acid. 16. The deposition solution of claim 1, further comprising at least one complexing agent being introduced into the deposition solution as citric acid, tartaric acid, pyrophosphoric acid, or mixtures thereof. 17. The deposition solution of claim 1, wherein the metal ions comprise first ions and second-metal ions, the first metal ions and second metal ions are dissimilar, the second metal ions are introduced into the deposition solution as tungsten oxides, tungsten phosphoric acids, tungstic acid, or mixtures thereof. 18. The deposition solution of claim 1, wherein the metal ions comprise first metal ions and second metal ions, the first metal ions and second metal ions are dissimilar, the second metal ions are selected from the 4th period of the periodic table, the 5th period of the periodic table, and 6th period of the periodic table. 19. The deposition solution of claim 1, wherein the metal ions comprise first metal ions and second metal ions, the first metal ions and second metal ions being dissimilar, the second metal ions being selected from a group consisting of chromium, nickel, copper, zinc, molybdenum, ruthenium, rhodium, palladium, silver, cadmium, indium, tin, antimony, tungsten, rhenium, osmium, iridium, platinum, gold, thallium, and bismuth. 20. The deposition solution of claim 1, further comprising a buffering agent. 21. The deposition solution of claim 1, further comprising a buffering agent comprising a boric acid solution for maintaining pH of the deposition solution within the range of 8 to 10. 22. The electroless deposition solution of claim 1, wherein the metal is a cobalt tungsten phosphorous alloy film having a phosphorous content of 2% to 14% and a tungsten content of 0.5% to 5%, the electroless deposition solution comprising: cobalt ions, tungsten ions, a hypophosphite reducing agent for the cobalt and the tungsten ions, a citric acid as a complexing agent for the cobalt and the tungsten ions, and a buffering agent. 23. The deposition solution of claim 1, wherein the metal comprises a barrier layer for the formation of copper interconnects in integrated circuits of semiconductor devices and is formed from a material selected from the group consisting of Co0.9W0.02P0.08, Co0.9P0.1, Co0.96W0.0436B0.004, and Co0.9Mo0.03P0.08. 24. The electroless deposition solution of claim 1, further comprising one or more reducing agents;optionally comprising one or more complexing agents;optionally comprising one or more buffering agents; andoptionally comprising one or more surfactants. 25. The electroless deposition solution of claim 1, optionally comprising one or more complexing agents;optionally comprising one or more buffering agents; andoptionally comprising one or more surfactants. 26. The electroless deposition solution of claim 1, further comprising one or more reducing agents, one or more complexing agents, one or more buffering agents, and one or more surfactants. 27. The electroless deposition solution of claim 1, further comprising one or more complexing agents, one or more buffering agents, and one or more surfactants. 28. The deposition solution of claim 1, further comprising a reducing agent to form the metal by electroless deposition, the reducing agent comprising: alkyl, dialkyl and trialkyl amine boranes of the general formula R1R2R3NH3−nBH3, where R1, R2, and R3 comprise the same or different alkyl groups and n is the number of alkyl groups attached to the amine boranes, where n can be 0, 1, 2, and 3;hypophosphite;hydrazine;hypophosphite dimethylamine borane;metal ion reducing agents selected from the group consisting of Titanium(III), Manganese(II), Copper(I), and Cobalt(II); andmixtures thereof;further comprising at least one complexing agent selected from the group consisting of citrate, tartrate, glycine, pyrophosphate, and ethylenediaminetetraacetic acid, the complexing agents being introduced into the deposition solution as acids;further comprising a buffering agentwherein the pH is from 4.5 to 14 including all ranges, subranges, and values subsumed therein; andwherein the metal ions are introduced into the deposition solution as dissolved metal ion salt comprising: a metal sulfate,a metal chloride, ora metal hydroxide. 29. The deposition solution of claim 1, further comprising at least one complexing agent selected from the group consisting of citrate, tartrate, glycine, pyrophosphate, and ethylenediaminetetraacetic acid, the complexing agents being introduced into the deposition solution as acids;further comprising a buffering agentwherein the pH is from 4.5 to 14 including all ranges, subranges, and values subsumed therein; andwherein the metal ions are introduced into the deposition solution as dissolved metal ion salt comprising: a metal sulfate,a metal chloride, ora metal hydroxide. 30. An electroless deposition solution to form a metal on a substrate, the electroless deposition solution comprising metal ions, at least one reducing agent, and a pH adjustor comprising guanidine, tetramethylguanidine, triazabicyclodecene, or mixtures thereof so as to effect a pH from 4.5 to 14; the electroless deposition solution being alkali-metal free.