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A method of drawing a glass clad wire is provided herein, the method comprising: (i) sealing off one end of a glass tube such that the tube has an open end and a closed end; (ii) introducing a wire material inside the glass tube; (iii) heating a portion of the glass tube such that the glass partiall

A method of drawing a glass clad wire is provided herein, the method comprising: (i) sealing off one end of a glass tube such that the tube has an open end and a closed end; (ii) introducing a wire material inside the glass tube; (iii) heating a portion of the glass tube such that the glass partially melts to form a first ampoule containing the wire material to be used in a drawing operation; (iv) introducing the first ampoule containing the wire material into a heating device; (v) increasing the temperature within the heating device such that the glass tube is heated enough for it to be drawn and wire material melts; and (vi) drawing the glass clad wire comprising a continuous wire of wire material, wherein the wire material is a metal, semi-metal, alloy, or semiconductor thermoelectrically active material, and wherein the wire diameter is equal to or smaller than about 5 μm.

대표청구항 ▼

1. A method of drawing glass clad wires, comprising: sealing off one end of a glass tube such that the glass tube has an open end and a closed end;introducing a semiconductor material inside the glass tube, wherein the semiconductor material comprises lead telluride, bismuth telluride, silicon germa

1. A method of drawing glass clad wires, comprising: sealing off one end of a glass tube such that the glass tube has an open end and a closed end;introducing a semiconductor material inside the glass tube, wherein the semiconductor material comprises lead telluride, bismuth telluride, silicon germanium, zinc antimonide or zinc cadmium antimonide;evacuating the glass tube;heating a portion of the glass tube such that the glass partially melts forming a sealed glass tube;further heating the glass tube above the semiconductor material melting temperature such that the semiconductor material melts and the glass tube is heated enough for it to be drawn;drawing a first glass clad continuous semiconductor wire having a diameter of smaller than about 5 μm;providing a plurality of additional glass clad continuous semiconductor wires having diameter of smaller than about 5 μm;bunching the first glass clad continuous semiconductor wire and a plurality of a additional glass clad continuous semiconductor wires together to provide a plurality of bunched glass clad continuous semiconductor wires having a diameter of smaller than about 5 μm;drawing the bunched glass clad continuous semiconductor wires one or more times to produce a multi core cable having a plurality of continuous semiconductor wires that are insulated from each other by glass cladding; andforming at least a portion of the cable into a portion of a thermoelectric device,wherein the plurality of bunched glass clad wires comprises the plurality of glass clad continuous thermoelectric semiconductor material wires comprising lead telluride, bismuth telluride, silicon germanium, zinc antimonide or zinc cadmium antimonide. 2. The method of claim 1, wherein the step of introducing the semiconductor material comprises introducing a granular semiconductor material into the glass tube. 3. The method of claim 1, wherein: (i) the semiconductor wires consist essentially of PbTe; and(ii) a ZT factor of the cable is at least 1.5 at about 750 K. 4. The method of claim 1, wherein at least one of the semiconductor wires comprises a single crystal at least one of (i) along the length of the wire or (ii) across the diameter of the wire. 5. The method of claim 1, wherein at least one of the semiconductor wires comprises a polycrystalline microstructure. 6. The method of claim 5, wherein the polycrystalline microstructure comprises at least some grains with a preferred crystallographic orientation. 7. The method of claim 1, further comprising fabricating a thermoelectric generator or a thermoelectric refrigerator with the plurality of glass clad continuous thermoelectric semiconductor material wires. 8. The method of claim 3, wherein the step of further heating the glass tube above the semiconductor material melting temperature comprises heating the glass tube above 920 C to about 1030 C. 9. The method of claim 8, wherein: a ZT factor of the cable ranges from about 1.9 to about 2.4 at 725 K;an electrical resistivity of the bunched glass clad continuous semiconductor wires ranges from about 0.9 mΩ-cm to about 2.5 mΩ-cm at 725K;a thermal conductivity of the bunched glass clad continuous semiconductor wires ranges from about 0.94 W/mK to about 1.1 W/mK at 725K; anda thermopower of the bunched glass clad continuous semiconductor wires ranges from about 230 μV/K to about 430 μV/K at 725K.