IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0456349
(2009-06-15)
|
등록번호 |
US-8680662
(2014-03-25)
|
발명자
/ 주소 |
- Haba, Belgacem
- Mohammed, Ilyas
- Mirkarimi, Laura
- Kriman, Moshe
|
출원인 / 주소 |
|
대리인 / 주소 |
Lerner, David, Littenberg, Krumholz & Mentlik, LLP
|
인용정보 |
피인용 횟수 :
18 인용 특허 :
138 |
초록
▼
A microelectronic assembly can include a first microelectronic device and a second microelectronic device. Each microelectronic device has a die structure including at least one semiconductor die and each of the microelectronic devices has a first surface, a second surface remote from the first surf
A microelectronic assembly can include a first microelectronic device and a second microelectronic device. Each microelectronic device has a die structure including at least one semiconductor die and each of the microelectronic devices has a first surface, a second surface remote from the first surface and at least one edge surface extending at angles other than a right angle away from the first and second surfaces. At least one electrically conductive element extends along the first surface onto at least one of the edge surfaces and onto the second surface. At least one conductive element of the first microelectronic device can be conductively bonded to the at least one conductive element of the second microelectronic device to provide an electrically conductive path therebetween.
대표청구항
▼
1. A microelectronic assembly, comprising: a first microelectronic device and a second microelectronic device, each of the microelectronic devices including a die structure including at least one semiconductor die, andeach of the microelectronic devices having a first surface, a second surface oppos
1. A microelectronic assembly, comprising: a first microelectronic device and a second microelectronic device, each of the microelectronic devices including a die structure including at least one semiconductor die, andeach of the microelectronic devices having a first surface, a second surface opposite the first surface, at least one edge surface extending at an angle other than a right angle away from the first and second surfaces, and at least one first electrically conductive element extending along the first surface and onto the at least one of the edge surface and contacting at least one second electrically conductive element, the at least one second electrically conductive element extending along the second surface so as to be opposite the first electrically conductive element along the first surface in a direction of thickness of the assembly, at least one of the first or second conductive elements of the first microelectronic device being conductively bonded to at least one of the first or second conductive elements of the second microelectronic device to provide an electrically conductive path therebetween. 2. A microelectronic assembly as claimed in claim 1, wherein the at least one first electrically conductive element of each of the microelectronic devices includes a first element formed by plating onto the first surface and the at least one edge surface thereof, and the at least one second electrically conductive element of each of the microelectronic devices includes a second element formed by plating onto the second surface thereof, wherein the first element of each of the microelectronic devices is plated onto a portion of the second element thereof. 3. A microelectronic assembly as claimed in claim 2, wherein the first element of each of the microelectronic devices extends along the portion of the second element thereof on which the first element is plated. 4. A microelectronic assembly as claimed in claim 2, wherein the first element of each of the microelectronic devices extends along an edge of the second element thereof. 5. A microelectronic assembly as claimed in claim 1, wherein the at least one conductive element of the first microelectronic device is conductively bonded to the at least one conductive element of the second microelectronic device with a fusible metal. 6. A microelectronic assembly as claimed in claim 1, wherein the at least one conductive element of the first microelectronic device is conductively bonded to the at least one conductive element of the second microelectronic device with conductive paste. 7. A microelectronic assembly as claimed in claim 1, wherein one of the first and second surfaces of the first microelectronic device confronts one of the first and second surfaces of the second microelectronic device and portions of the conductive elements exposed at the confronting surfaces are bonded together. 8. A microelectronic assembly as claimed in claim 7, wherein at least one of the first or second conductive elements of the first and second microelectronic devices includes conductive pads exposed, respectively, at the first or second surfaces of each of the microelectronic devices, the conductive pads being bonded together. 9. A microelectronic assembly as claimed in claim 7, wherein at least one the first or second conductive elements of at least one of the first or second microelectronic devices includes traces and conductive pads, wherein at least one of the conductive pads is disposed a spaced distance from the at least one edge surface of the at least one microelectronic device. 10. A microelectronic assembly as claimed in claim 7, wherein at least one of the conductive elements of each of the microelectronic devices includes a conductive pad proximate the at least one edge surface thereof. 11. A microelectronic assembly as claimed in claim 10, wherein the conductive pad of each of the microelectronic devices extends to the at least one edge surface thereof. 12. A microelectronic assembly as claimed in claim 1, wherein at least one of the die structures includes a plurality of semiconductor dies. 13. A microelectronic assembly as claimed in claim 12, wherein bond pad-bearing surfaces of at least two of the semiconductor dies included in the at least one die structure face in the same direction. 14. A microelectronic assembly as claimed in claim 12, wherein bond pad-bearing surfaces of at least two of the semiconductor dies included in the at least one die structure face in different directions. 15. A microelectronic assembly as claimed in claim 1, wherein the edge surface of at least one of the first or second microelectronic devices extends at an angle of between 50 degrees and 89 degrees with respect to at least one of the first and second surfaces thereof. 16. A microelectronic assembly as claimed in claim 1, wherein the first and second microelectronic devices are stacked in a vertical direction and the at least one edge surfaces of the first and second microelectronic devices are offset from each other in a direction away from the vertical direction. 17. A microelectronic assembly as claimed in claim 1, wherein the first surfaces of the first and second microelectronic devices extend in lateral directions and have first dimensions in the lateral directions, wherein the lateral dimensions of the first surfaces of the first and second microelectronic devices are different. 18. A microelectronic assembly, comprising: a first microelectronic device and a second microelectronic device, each of the microelectronic devices including a die structure including at least one semiconductor die, andeach of the microelectronic devices having a first surface, a second surface opposite the first surface, at least one edge surface extending at an angle other than a right angle away from the first surface, and at least one first electrically conductive element extending along the first surface and onto the at least one edge surface and contacting at least one second electrically conductive element, the at least one second electrically conductive element extending along the second surface so as to be opposite the first electrically conductive element along the first surface in a direction of thickness of the assembly, at least one of the first and second conductive elements of the first microelectronic device being conductively bonded to at least one of the first or second conductive elements of the second microelectronic device to provide an electrically conductive path therebetween. 19. A microelectronic assembly as claimed in claim 18, wherein the at least one edge surface extends at an angle other than a right angle away from the first and second surfaces. 20. A microelectronic assembly as claimed in claim 18, wherein at least edge portions of the electrically conductive elements exposed at the at least one edge surface of the first microelectronic device are conductively bonded to at least edge portions of the electrically conductive elements exposed at the least one edge surface of the second microelectronic device to provide the electrically conductive path. 21. A microelectronic assembly as claimed in claim 20, wherein the at least edge portions of the conductive elements of the first microelectronic device are conductively bonded to the at least edge portions of the conductive elements of the second microelectronic device with a fusible metal. 22. A microelectronic assembly as claimed in claim 20, wherein the at least edge portions of the conductive elements of the first microelectronic device are conductively bonded to the at least edge portions of the conductive elements of the second microelectronic device with conductive paste. 23. A method of fabricating a stacked microelectronic assembly, comprising: arranging a major surface of a first microelectronic device to confront a major surface of a second microelectronic device and conductively bonding at least one electrically conductive element exposed at the major surface of the first microelectronic device with at least one electrically conductive element exposed at the major surface of the second microelectronic device to provide an electrically conductive path therebetween, wherein each of the microelectronic devices includes a die structure including at least one semiconductor die, andeach of the microelectronic devices has a first major surface, a second major surface opposite the first major surface, at least one edge surface extending at an angle other than a right angle away from the first major surface, and at least one first electrically conductive element extending along the first major surface and onto the at least one of the edge surface and contacting the at least one second electrically conductive element at the first major surface, the at least one second electrically conductive element extending along the second major surface so as to be opposite the first electrically conductive element along the first surface in a direction of thickness of the assembly. 24. A method of fabricating a stacked microelectronic assembly, comprising: forming a stack including a first microelectronic device with a second microelectronic device, each of the microelectronic devices including a die structure including at least one semiconductor die, andeach of the microelectronic devices having a first surface, a second surface opposite the first surface, at least one edge surface extending at an angle other than a right angle away from the first surface, at least one first electrically conductive element extending along the first surface and onto the at least one of the edge surface and contacting at least one second electrically conductive element, the at least one second electrically conductive element extending along the second surface so as to be opposite the first electrically conductive element along the first surface in a direction of thickness of the assembly; andconductively bonding portions of at least one of the conductive elements exposed at the edge surface of the first microelectronic device to at least one of the conductive elements exposed at the edge surface of the second microelectronic device to provide an electrically conductive path therebetween. 25. A method as claimed in claim 24, wherein the first microelectronic device is disposed above the second microelectronic device, and the step of bonding is performed by heating a fusible metal proximate the conductive element exposed at the at least one edge surface of the first microelectronic device such that the fusible metal flows onto the conductive element exposed at the at least one edge surface of the second microelectronic device. 26. A method as claimed in claim 25, wherein the fusible metal bridges a gap between the conductive elements of the first and second microelectronic devices. 27. A method as claimed in claim 24, wherein the first microelectronic device is disposed above the second microelectronic device, and the step of bonding is performed by dispensing a flowable conductive material onto the conductive element exposed at the at least one edge surface of the first microelectronic device such that the conductive material flows onto the conductive element exposed at the at least one edge surface of the second microelectronic device.
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