Power amplifier with tunable bandpass and notch filter
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H04B-001/40
H04B-001/16
출원번호
US-0607634
(2009-10-28)
등록번호
US-8682260
(2014-03-25)
발명자
/ 주소
Granger-Jones, Marcus
Khlat, Nadim
Bauder, Ruediger
출원인 / 주소
RF Micro Devices, Inc.
대리인 / 주소
Withrow & Terranova, P.L.L.C.
인용정보
피인용 횟수 :
6인용 특허 :
2
초록▼
The present disclosure relates to a multi-band RF power amplifier (PA) module, which is used to receive, filter, and amplify a first RF input signal to provide a first RF output signal using a first tunable bandpass and notch filter. The multi-band RF PA module may include a supporting substrate hav
The present disclosure relates to a multi-band RF power amplifier (PA) module, which is used to receive, filter, and amplify a first RF input signal to provide a first RF output signal using a first tunable bandpass and notch filter. The multi-band RF PA module may include a supporting substrate having at least a first inductive element that provides a first portion of the first tunable bandpass and notch filter. Further, the multi-band RF PA module may include at least a first semiconductor die, which is attached to the supporting substrate and provides a second portion of the first tunable bandpass and notch filter. A transceiver module may provide the first RF input signal.
대표청구항▼
1. A multi-band radio frequency (RF) power amplifier (PA) module adapted to receive, filter, and amplify a first RF input signal to provide a first RF output signal using a first tunable bandpass and notch filter, and comprising: a supporting substrate comprising at least one inductive element, whic
1. A multi-band radio frequency (RF) power amplifier (PA) module adapted to receive, filter, and amplify a first RF input signal to provide a first RF output signal using a first tunable bandpass and notch filter, and comprising: a supporting substrate comprising at least one inductive element, which provides a first portion of the first tunable bandpass and notch filter; andat least one semiconductor die attached to the supporting substrate, such that at least a first of the at least one semiconductor die comprises at least one digital tunable capacitor (DTC) array, which provides a second portion of the first tunable bandpass and notch filter. 2. The multi-band RF PA module of claim 1 further comprising a first PA driver and adapted to: amplify the first RF input signal using the first PA driver to provide a first amplified RF signal;filter the first amplified RF signal using the first tunable bandpass and notch filter to provide a first filtered RF signal; andamplify the first filtered RF signal to provide the first RF output signal, wherein the first RF input signal is a first RF transmit signal. 3. The multi-band RF PA module of claim 2 further comprising a transceiver module adapted to: provide the first RF input signal;receive and provide control signals from and to the multi-band RF PA module; andtune the first tunable bandpass and notch filter using the control signals. 4. The multi-band RF PA module of claim 3 wherein a first notch frequency of the first tunable bandpass and notch filter is about equal to a frequency of a noise spur from the transceiver module. 5. The multi-band RF PA module of claim 3 wherein a first notch frequency of the first tunable bandpass and notch filter is about equal to a first desired receive frequency. 6. The multi-band RF PA module of claim 3 wherein a first peak frequency of the first tunable bandpass and notch filter is about equal to a first desired transmit frequency. 7. The multi-band RF PA module of claim 3 wherein a difference between a first desired transmit frequency and a first peak frequency of the first tunable bandpass and notch filter is based on a maximum acceptable first insertion loss, and a difference between a first desired receive frequency and a first notch frequency of the first tunable bandpass and notch filter is based on a minimum acceptable first attenuation. 8. The multi-band RF PA module of claim 3 wherein the transceiver module comprises a multi-band system-on-a-chip (SoC) semiconductor die. 9. The multi-band RF PA module of claim 3 wherein the transceiver module has a receive band noise floor requirement of less than or equal to about −153 decibels with respect to carrier (dBc) per Hertz. 10. The multi-band RF PA module of claim 2 wherein the multi-band RF PA module is a multi-mode multi-band RF PA module adapted to receive, filter, and amplify at least two selected from a group consisting of simplex RF signals, half-duplex RF signals, and full-duplex RF signals. 11. The multi-band RF PA module of claim 2 further adapted to receive, filter, and amplify a second RF input signal using a second tunable bandpass and notch filter, such that the first RF input signal is a lowband RF transmit signal and the second RF input signal is a lowband RF transmit signal. 12. The multi-band RF PA module of claim 2 further comprising: final PA circuitry adapted to amplify the first filtered RF signal to provide the first RF output signal; anda PA module controller adapted to provide a first filter control signal to the first tunable bandpass and notch filter, such that the first tunable bandpass and notch filter tunes at least one of a first notch frequency and a first peak frequency based on the first filter control signal. 13. The multi-band RF PA module of claim 12 wherein the first tunable bandpass and notch filter comprises: a first of the at least one first inductive element having one end coupled to ground and an opposite end adapted to receive the first amplified RF signal and provide the first filtered RF signal; anda second inductive element, a first capacitive element, a second capacitive element, and a first of the at least one DTC array coupled in series to one another to form a first series coupling, which is coupled across the first inductive element, such that a first capacitance associated with the first of the at least one DTC array is based on the first filter control signal, wherein the first series coupling and the first inductive element provide bandpass and notch filter behavior of the first tunable bandpass and notch filter. 14. The multi-band RF PA module of claim 13 wherein the first tunable bandpass and notch filter further comprises a third capacitive element coupled in series with a second of the at least one DTC array to form a second series coupling, which is coupled across the first inductive element, such that a second capacitance associated with the second of the at least one DTC array is based on the first filter control signal, wherein a duplex frequency of the multi-band RF PA module is based on the second series coupling, the first series coupling, and the first inductive element. 15. The multi-band RF PA module of claim 14 wherein the first tunable bandpass and notch filter further comprises a first varactor circuit coupled across the first of the at least one DTC array, such that a third capacitance associated with the first varactor circuit is based on the first filter control signal, the first varactor circuit provides analog tuning of the third capacitance, the first of the at least one DTC array provides digital tuning of the first capacitance, and the second of the at least one DTC array provides digital tuning of the second capacitance. 16. The multi-band RF PA module of claim 13 wherein the first of the at least one semiconductor die comprises the first of the at least one DTC array, the second capacitive element, and the PA module controller. 17. The multi-band RF PA module of claim 13 wherein the first of the at least one semiconductor die further comprises the second capacitive element and the first PA driver. 18. The multi-band RF PA module of claim 13 wherein the first inductive element comprises at least one selected from a group consisting of a printed inductive element, a discrete surface mount device (SMD) inductive element, and at least one bond wire that serves as an inductive element. 19. The multi-band RF PA module of claim 12 further comprising a first filter bypass circuit coupled across the first tunable bandpass and notch filter and adapted to bypass the first tunable bandpass and notch filter and turn off the first PA driver when a magnitude of the first RF input signal drops below a first threshold. 20. A method comprising: providing a multi-band radio frequency (RF) power amplifier (PA) module comprising: a first tunable bandpass and notch filter;a first PA driver;a supporting substrate comprising at least one inductive element, which provides a first portion of the first tunable bandpass and notch filter; andat least one semiconductor die attached to the supporting substrate, such that at least one of the at least one semiconductor die comprises at least one digital tunable capacitor (DTC) array, which provides a second portion of the first tunable bandpass and notch filter;amplifying a first RF input signal to provide a first amplified RF signal using the first PA driver;filtering the first amplified RF signal to provide a first filtered RF signal using the first tunable bandpass and notch filter; andamplifying the first filtered RF signal to provide a first RF output signal.
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