[특허]Light emitting diodes including optically matched substrates

Light emitting diodes including optically matched substrates 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-033/00
출원번호	US-0835366 (2010-07-13)
등록번호	US-8692277 (2014-04-08)
발명자 / 주소	Slater, Jr., David B. Glass, Robert C. Swoboda, Charles M. Keller, Bernd Ibbetson, James Thibeault, Brian Tarsa, Eric J.
출원인 / 주소	Cree, Inc.
대리인 / 주소	Myers Bigel Sibley & Sajovec, P.A.
인용정보	피인용 횟수 : 0 인용 특허 : 76

초록 ▼

Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face.

대표청구항 ▼

1. A light emitting diode comprising: a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer;a substrate on the gallium nitride-based n-type layer and optically matched to the diode region, the substrate having a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween, at least a portion of the sidewall being beveled so as to extend oblique to the first and second faces;a reflector on the gallium nitride-based p-type layer remote from the substrate;a first bonding layer on the reflector remote from the substrate;an ohmic contact on the gallium nitride-based n-type layer remote from the substrate; anda second bonding layer on the ohmic contact remote from the substrate,wherein the first face further comprises two intersecting grooves therein that form an X-shape in plan view. 2. A light emitting diode according to claim 1 wherein the ohmic contact comprises reflective material. 3. A light emitting diode according to claim 1 wherein the substrate is directly on the gallium nitride-based n-type layer to define an interface therebetween, wherein the interface is planar. 4. A light emitting diode according to claim 1 wherein the first face of the substrate is textured. 5. A light emitting diode according to claim 1 wherein the substrate comprises silicon carbide. 6. A light emitting diode according to claim 1 further comprising a first barrier layer between the reflector and the first bonding layer and a second barrier layer between the ohmic contact and the second bonding layer. 7. A light emitting diode according to claim 1 wherein the gallium nitride-based n-type layer includes a thick portion that is on the active region and a thin portion that is offset from the active region and wherein the ohmic contact is on the thin portion, remote from the substrate. 8. A light emitting diode according to claim 1 wherein the first and second bonding layers are coplanar. 9. A light emitting diode according to claim 8: wherein the ohmic contact comprises reflective material;wherein the substrate is directly on the gallium nitride-based n-type layer to define an interface therebetween, wherein the interface is planar; andwherein the substrate comprises silicon carbide. 10. A light emitting diode according to claim 9 further comprising a first barrier layer between the reflector and the first bonding layer and a second barrier layer between the ohmic contact and the second bonding layer. 11. A light emitting diode according to claim 9 wherein the gallium nitride-based n-type layer includes a thick portion that is on the active region and a thin portion that is offset from the active region and wherein the ohmic contact is on the thin portion, remote from the substrate. 12. A light emitting diode comprising: a substrate having a first face and a second face that is wider than the first face; anda semiconductor diode region on the second face, remote from the first face, that is optically matched to the substrate and that is wider than the second face, so that a portion of the semiconductor diode region overhangs beyond a widest portion of the second face,wherein the substrate includes at least one groove in the first face and a beveled sidewall between the first and second faces. 13. A light emitting diode according to claim 12 wherein the diode region includes a first portion adjacent the second face that is wider than the second planar face and a second portion remote from the second face that is narrower than the first portion to define a mesa. 14. A light emitting diode according to claim 13 wherein the second portion is also narrower than the second face. 15. A light emitting diode according to claim 14 further comprising a contact on the mesa remote from the first portion that is narrower than the mesa. 16. A light emitting diode according to claim 14 wherein the second portion is also at least as narrow as the first face. 17. A light emitting diode according to claim 12: wherein the substrate is on the diode region and has a sidewall between the first face and the second face, at least a portion of the sidewall being beveled so as to extend oblique to the first and second faces. 18. A light emitting diode according to claim 17 wherein the substrate is directly on the diode region to define an interface therebetween, wherein the interface is planar. 19. A light emitting diode according to claim 12 wherein the substrate comprises silicon carbide. 20. A light emitting diode according to claim 13: wherein the diode region comprises an active region; andwherein the active region is confined to the mesa. 21. A light emitting diode comprising: a diode region comprising an n-type layer, an active region and a p-type layer;an anode contact on the p-type layer; anda cathode contact on the n-type layer,wherein the anode contact and the cathode contact are coplanar and the cathode contact is thicker than the anode contact; anda substrate having an inner face on the n-type layer remote from the coplanar anode and cathode contacts, an outer face and a beveled sidewall between the inner face and the outer face,wherein the substrate includes at least one groove in the outer face. 22. A light emitting diode according to claim 21 wherein the coplanar anode and cathode contacts are configured for flip-chip mounting of the light emitting diode. 23. A light emitting diode according to claim 21 in combination with a mounting support, wherein the coplanar anode and cathode contacts are mounted on the mounting support. 24. A light emitting diode according to claim 23 wherein the coplanar anode and cathode contacts are mounted directly on the mounting support. 25. A light emitting diode according to claim 23 in further combination with a dome that extends from the mounting support to surround the light emitting diode. 26. A light emitting diode comprising: a substrate having a first face and a second face that is wider than the first face;a semiconductor diode region on the second face, remote from the first face, that is optically matched to the substrate; anda pair of electrical contacts for the diode region that are both on the diode region remote from the substrate;wherein the substrate includes at least two intersecting grooves in the first face that form an X-shape in plan view, and a beveled sidewall between the first and second faces. 27. A light emitting diode according to claim 26 wherein the pair of electrical contacts have coplanar outer surfaces. 28. A light emitting diode according to claim 26 wherein the pair of electrical contacts comprise reflective electrical contacts. 29. A light emitting diode according to claim 12 wherein the at least one groove comprises two intersecting grooves that form an X-shape in plan view. 30. A light emitting diode according to claim 21 wherein the at least one groove comprises two intersecting grooves that form an X-shape in plan view.

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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Light emitting diodes including optically matched substrates 원문보기

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Light emitting diodes including optically matched substrates 원문보기

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