IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0006965
(2011-01-14)
|
등록번호 |
US-8710659
(2014-04-29)
|
우선권정보 |
JP-2010-007094 (2010-01-15); JP-2010-007095 (2010-01-15); JP-2010-007096 (2010-01-15); JP-2010-068051 (2010-03-24) |
발명자
/ 주소 |
- Moriyama, Kei
- Tamaki, Shuichi
- Sako, Shuichi
- Kori, Mitsuhide
- Goto, Junji
- Sawada, Tatsuya
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
3 인용 특허 :
3 |
초록
▼
A semiconductor device includes an interlayer dielectric film, a passivation film, made of an insulating material, formed on the interlayer dielectric film, an uppermost wire, made of a material mainly composed of copper, formed between the surface of the interlayer dielectric film and the passivati
A semiconductor device includes an interlayer dielectric film, a passivation film, made of an insulating material, formed on the interlayer dielectric film, an uppermost wire, made of a material mainly composed of copper, formed between the surface of the interlayer dielectric film and the passivation film, and a wire covering film, made of a material mainly composed of aluminum, interposed between the passivation film and the surface of the uppermost wire for covering the surface of the uppermost wire.
대표청구항
▼
1. A semiconductor device comprising: an interlayer dielectric film;a passivation film, made of an insulating material, formed on the interlayer dielectric film;an uppermost wire, made of a material mainly composed of copper, formed between a surface of the interlayer dielectric film and the passiva
1. A semiconductor device comprising: an interlayer dielectric film;a passivation film, made of an insulating material, formed on the interlayer dielectric film;an uppermost wire, made of a material mainly composed of copper, formed between a surface of the interlayer dielectric film and the passivation film; anda wire covering film, made of a material mainly composed of aluminum, interposed between the passivation film and a surface of the uppermost wire, the wire covering film covering the surface of the uppermost wire;wherein the wire covering film extends in both a horizontal direction along an upper surface of the uppermost wire and a perpendicular direction along a side surface of the uppermost wire, the wire covering film covering the uppermost wire. 2. The semiconductor device according to claim 1, further comprising a first barrier film, made of a material having a barrier property against diffusion of copper, interposed between the surface of the uppermost wire and the wire covering film. 3. The semiconductor device according to claim 2, wherein the first barrier film has a barrier property against diffusion of gold. 4. The semiconductor device according to claim 2, wherein the first barrier film is formed by a single film or a multilayer film made of one or more materials selected from a group consisting of Ti, TiN, WN, TaN, Ta, W and TiW. 5. The semiconductor device according to claim 1, wherein a second barrier film having a barrier property against diffusion of copper is interposed between the uppermost wire and the interlayer dielectric film. 6. The semiconductor device according to claim 5, wherein the second barrier film is formed by a single film or a multilayer film made of one or more materials selected from a group consisting of Ti, TiN, WN, TaN, Ta, W and TiW. 7. The semiconductor device according to claim 1, wherein the passivation film is provided with a pad opening selectively exposing a surface of the wire covering film,the semiconductor device further comprises a bonding wire, made of copper, bonded to a portion of the wire covering film exposed from the pad opening, andthe wire covering film is in close contact with the uppermost wire. 8. The semiconductor device according to claim 1, wherein the passivation film is made of silicon nitride. 9. The semiconductor device according to claim 1, wherein the passivation film includes a nitride film made of silicon nitride and an organic film, made of an organic material, formed on the nitride film. 10. The semiconductor device according to claim 1, wherein the passivation film is made of an organic material. 11. The semiconductor device according to claim 1, wherein the interlayer dielectric film is made of silicon nitride. 12. The semiconductor device according to claim 1, further comprising an alignment mark, made of the same material as the wire covering film, formed on the surface of the interlayer dielectric film, wherein the passivation film is provided with an opening exposing the alignment mark. 13. The semiconductor device according to claim 12, further comprising a fuse formed under the interlayer dielectric film. 14. The semiconductor device according to claim 1, further comprising: a lower wire formed under the interlayer dielectric film; anda plurality of vias passing through the interlayer dielectric film in a thickness direction for electrically connecting the lower wire and the upper most wire with each other. 15. The semiconductor device according to claim 14, wherein the vias are made of a conductive material not containing copper. 16. The semiconductor device according to claim 14, wherein surfaces of the vias and the surface of the interlayer dielectric film are flush with one another. 17. The semiconductor device according to claim 14, wherein an area proportion of a region provided with the vias with respect to an opposed area of the lower wire and the uppermost wire is not less than 0.5% and not more than 30%. 18. The semiconductor device according to claim 1, further comprising: a lower wire formed under the interlayer dielectric film; anda via, made of tungsten, passing through the interlayer dielectric film in a thickness direction for electrically connecting the lower wire and the uppermost wire with each other. 19. The semiconductor device according to claim 1, wherein the uppermost wire has: a first wire portion extending in a first direction;a second wire portion extending in a second direction orthogonal to the first direction; andone or a plurality of connecting wire portions, connecting an end portion of the first wire portion and an end portion of the second wire portion with each other, extending on a first straight line intersecting with the first direction and the second direction respectively, anda length of a plurality of second straight lines, connecting a junction between the first wire portion and the connecting wire portion and a junction between the second wire portion and the connecting wire portion with each other, in the first direction and the second direction, respectively, are greater than 1 μm and less than or equal to 10 μm. 20. The semiconductor device according to claim 19, wherein a width of the wire is not less than 10 μm. 21. The semiconductor device according to claim 19, wherein the uppermost wire has only one of the connecting wire portion. 22. A semiconductor device comprising: an interlayer dielectric film;an uppermost wire, made of a material mainly composed of copper, formed on a surface of the interlayer dielectric film;a wire covering film, made of a material mainly composed of aluminum, formed on the uppermost wire;an alignment mark, made of the same material as the wire covering film, formed on the surface of the interlayer dielectric film; anda passivation film, made of an insulating material, covering the surfaces of the interlayer dielectric film and the wire covering film and provided with an opening exposing the alignment mark;wherein the wire covering film extends in both a horizontal direction along an upper surface of the uppermost wire and a perpendicular direction along a side surface of the uppermost wire, the wire covering film covering the uppermost wire. 23. The semiconductor device according to claim 22, further comprising a fuse formed under the interlayer dielectric film. 24. The semiconductor device according to claim 22, wherein the wire covering film covers a surface of the uppermost wire. 25. The semiconductor device according to claim 22, further comprising a first barrier film, made of a material having a barrier property against diffusion of copper, interposed between a surface of the uppermost wire and the wire covering film. 26. The semiconductor device according to claim 25, wherein the first barrier film has a barrier property against diffusion of gold. 27. The semiconductor device according to claim 25, wherein the first barrier film is formed by a single film or a multilayer film made of one or more materials selected from a group consisting of Ti, TiN, WN, TaN, Ta, W and TiW. 28. The semiconductor device according to claim 22, wherein a second barrier film having a barrier property against diffusion of copper is interposed between the uppermost wire and the interlayer dielectric film. 29. The semiconductor device according to claim 28, wherein the second barrier film is formed by a single film or a multilayer film made of one or more materials selected from a group consisting of Ti, TiN, WN, TaN, Ta, W and TiW. 30. The semiconductor device according to claim 22, wherein the passivation film is provided with a pad opening selectively exposing the surface of the wire covering film,the semiconductor device further comprises a bonding wire, made of copper, bonded to a portion of the wire covering film exposed from the pad opening, andthe wire covering film is in close contact with the uppermost wire. 31. The semiconductor device according to claim 22, wherein the passivation film is made of silicon nitride. 32. The semiconductor device according to claim 22, wherein the passivation film includes a nitride film made of silicon nitride and an organic film, made of an organic material, formed on the nitride film. 33. The semiconductor device according to claim 22, wherein the passivation film is made of an organic material. 34. The semiconductor device according to claim 22, wherein the interlayer dielectric film is made of silicon nitride. 35. The semiconductor device according to claim 22, further comprising: a lower wire formed under the interlayer dielectric film; anda plurality of vias passing through the interlayer dielectric film in a thickness direction for electrically connecting the lower wire and the uppermost wire with each other. 36. The semiconductor device according to claim 35, wherein the vias are made of a conductive material not containing copper. 37. The semiconductor device according to claim 35, wherein surfaces of the vias and the surface of the interlayer dielectric film are flush with one another. 38. The semiconductor device according to claim 35, wherein an area proportion of a region provided with the vias with respect to an opposed area of the lower wire and the uppermost wire is not less than 0.5% and not more than 30%. 39. The semiconductor device according to claim 22, further comprising: a lower wire formed under the interlayer dielectric film; anda via, made of tungsten, passing through the interlayer dielectric film in a thickness direction for electrically connecting the lower wire and the uppermost wire with each other. 40. The semiconductor device according to claim 22, wherein the uppermost wire has: a first wire portion extending in a first direction;a second wire portion extending in a second direction orthogonal to the first direction; andone or a plurality of connecting wire portions, connecting an end portion of the first wire portion and an end portion of the second wire portion with each other, extending on a first straight line intersecting with the first direction and the second direction respectively, anda length of a plurality of second straight lines, connecting a junction between the first wire portion and the connecting wire portion and a junction between the second wire portion and the connecting wire portion with each other, in the first direction and the second direction, respectively, are greater than 1 μm and less than or equal to 10 μm. 41. The semiconductor device according to claim 40, wherein a width of the wire is not less than 10 μm. 42. The semiconductor device according to claim 40, wherein the uppermost wire has only one of the connecting wire portion. 43. A semiconductor device comprising: an interlayer dielectric film;a wire, made of a material mainly composed of copper, protruding from a surface of the interlayer dielectric film; anda passivation film, made of an insulating material, covering the surfaces of the interlayer dielectric film and the wire,wherein the wire has:a first wire portion extending in a first direction;a second wire portion extending in a second direction orthogonal to the first direction; andone or a plurality of connecting wire portions, connecting an end portion of the first wire portion and an end portion of the second wire portion with each other, extending on a first straight line intersecting with the first direction and the second direction respectively, anda length of a plurality of second straight lines, connecting a junction between the first wire portion and the connecting wire portion and a junction between the second wire portion and the connecting wire portion with each other, in the first direction and the second direction, respectively, are greater than 1 μm and less than or equal to 10 μm. 44. The semiconductor device according to claim 43, wherein a width of the wire is not less than 10 μm. 45. The semiconductor device according to claim 43, wherein the wire has only one of the connecting wire portion. 46. The semiconductor device according to claim 43, further comprising a wire covering film, made of a material mainly composed of aluminum, interposed between the wire and the passivation film. 47. The semiconductor device according to claim 46, further comprising a first barrier film, made of a material having a barrier property against diffusion of copper, interposed between the wire and the wire covering film. 48. The semiconductor device according to claim 47, wherein the first barrier film is formed by a single film or a multilayer film made of one or more materials selected from a group consisting of Ti, TiN, WN, TaN, Ta, W and TiW. 49. The semiconductor device according to claim 43, further comprising a second barrier film, made of a material having a barrier property against diffusion of copper, interposed between the wire and the interlayer dielectric film. 50. The semiconductor device according to claim 49, wherein the second barrier film is formed by a single film or a multilayer film made of one or more materials selected from a group consisting of Ti, TiN, WN, TaN, Ta, W and TiW.
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