IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0447180
(2012-04-14)
|
등록번호 |
US-8735898
(2014-05-27)
|
우선권정보 |
JP-2000-045256 (2000-02-22) |
발명자
/ 주소 |
- Konuma, Toshimitsu
- Maruyama, Junya
|
출원인 / 주소 |
- Semiconductor Energy Laboratory Co., Ltd.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
12 인용 특허 :
59 |
초록
▼
Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure film formati
Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure film formation in the electrode hole 46 can be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.
대표청구항
▼
1. A light-emitting display device comprising: a transistor over a substrate;an interlayer insulating film formed over the transistor;a pixel electrode formed over the interlayer insulating film;an insulating monolayer formed over the pixel electrode and the interlayer insulating film, covering a to
1. A light-emitting display device comprising: a transistor over a substrate;an interlayer insulating film formed over the transistor;a pixel electrode formed over the interlayer insulating film;an insulating monolayer formed over the pixel electrode and the interlayer insulating film, covering a top portion of the pixel electrode, and thicker than the pixel electrode, the insulating monolayer comprising an organic material;a light-emitting layer formed over the insulating monolayer and the pixel electrode; anda second electrode formed over the light-emitting layer and opposed to the pixel electrode,wherein the pixel electrode is electrically connected to the transistor via a contact hole in the interlayer insulating film, andwherein the light-emitting layer is in contact with the pixel electrode. 2. A light-emitting display device according to claim 1, wherein the transistor is a current-controlling transistor. 3. A light-emitting display device according to claim 1, wherein the insulating monolayer covers the contact hole. 4. A light-emitting display device according to claim 1, wherein a portion of the insulating monolayer is in contact with the interlayer insulating film. 5. A light-emitting display device according to claim 1, wherein the light-emitting layer overlaps a contact portion of the pixel electrode to the transistor with the insulating monolayer interposed therebetween. 6. A light-emitting display device according to claim 4, wherein the light-emitting layer overlaps the interlayer insulating film with the insulating monolayer interposed therebetween. 7. A light-emitting display device according to claim 1, wherein the insulating monolayer comprises a material selected from the group consisting of acrylic resin, polyimide resin, polyamide resin and a high molecular compound of siloxane. 8. A light-emitting display device according to claim 1, further comprising: a passivation film interposed between the transistor and the interlayer insulating film, the passivation film comprising an inorganic material; anda source wiring and a drain wiring, one of the source wiring and the drain wiring electrically connecting the pixel electrode to the transistor through the passivation film and the interlayer insulating film,wherein the interlayer insulating film comprises a planarizing organic material. 9. A light-emitting display device comprising: a transistor over a substrate;an interlayer insulating film formed over the transistor;a pixel electrode formed over the interlayer insulating film;an insulating monolayer formed over the interlayer insulating film, the insulating monolayer being thicker than the pixel electrode and comprising an organic material;a light-emitting layer formed over and in contact with the pixel electrode and over the insulating monolayer; anda second electrode formed over the light-emitting layer and opposed to the pixel electrode,wherein the pixel electrode is electrically connected to the transistor via a contact hole in the interlayer insulating film, andwherein the insulating monolayer covers the interlayer insulating film and a portion of the pixel electrode. 10. A light-emitting display device according to claim 9, wherein the transistor is a current-controlling transistor. 11. A light-emitting display device according to claim 9, wherein the light-emitting layer overlaps the interlayer insulating film with the insulating monolayer interposed therebetween. 12. A light-emitting display device according to claim 9, wherein the light-emitting layer overlaps the portion of the pixel electrode with the insulating monolayer interposed therebetween. 13. A light-emitting display device according to claim 9, wherein the insulating monolayer comprises a material selected from the group consisting of acrylic resin, polyimide resin, polyamide resin, and a resin containing a high molecular compound of siloxane. 14. A light-emitting display device according to claim 9, further comprising: a passivation film interposed between the transistor and the interlayer insulating film, the passivation film comprising an inorganic material; anda source wiring and a drain wiring, one of the source wiring and the drain wiring electrically connecting the pixel electrode to the transistor through the passivation film and the interlayer insulating film,wherein the interlayer insulating film comprises a planarizing organic material. 15. A light-emitting display device comprising: a transistor over a substrate;an interlayer insulating film formed over the transistor;a pixel electrode formed over the interlayer insulating film;a first portion of insulating monolayer and a second portion of insulating monolayer formed over portions of the pixel electrode and the interlayer insulating film, the first portion of insulating monolayer and the second portion of insulating monolayer being thicker than the pixel electrode and each comprising an organic material;a light-emitting layer formed over and in contact with the pixel electrode, over the first portion of insulating monolayer, and over the second portion of insulating monolayer; anda third electrode formed over the light-emitting layer and opposed to the pixel electrode,wherein the pixel electrode is electrically connected to the transistor via a contact hole in the interlayer insulating film, andwherein the first portion of insulating monolayer covers and is in direct contact with the interlayer insulating film, and the second portion of insulating monolayer covers the contact hole. 16. A light-emitting display device according to claim 15, wherein the transistor is a current-controlling transistor. 17. A light-emitting display device according to claim 15, wherein the light-emitting layer overlaps a contact portion of the pixel electrode to the transistor, the first portion of insulating monolayer being interposed between the light-emitting layer and the contact portion. 18. A light-emitting display device according to claim 15, wherein the second portion of insulating monolayer is in contact with the interlayer insulating film. 19. A light-emitting display device according to claim 15, wherein a portion of the light-emitting layer overlaps the interlayer insulating film with the second portion of insulating monolayer interposed therebetween. 20. A light-emitting display device according to claim 15, wherein the first portion of insulating monolayer and the second portion of insulating monolayer comprise a material selected from the group consisting of acrylic resin, polyimide resin, polyamide resin, and a resin containing a high molecular compound of siloxane. 21. A light-emitting display device according to claim 15, further comprising: a passivation film interposed between the transistor and the interlayer insulating film, the passivation film comprising an inorganic material; anda source wiring and a drain wiring, one of the source wiring and the drain wiring electrically connecting the pixel electrode to the transistor through the passivation film and the interlayer insulating film,wherein the interlayer insulating film comprises a planarizing organic material. 22. A light-emitting display device comprising: first electrodes formed over an insulating layer;a portion of insulating monolayer formed in a space located between at least two of the first electrodes, the portion of insulating monolayer being thicker than the first electrodes, and comprising an organic material;a light-emitting layer formed over the first electrodes and the portion of insulating monolayer; andat least one second electrode formed over the light-emitting layer and opposed to the first electrodes. 23. A light-emitting display device according to claim 22, wherein the portion of insulating monolayer covers portions of the first electrodes. 24. A light-emitting display device according to claim 22, wherein at least one the first electrodes and the at least one second electrode are stripe-like. 25. A light-emitting display device according to claim 22, wherein the first electrodes and the at least one second electrode are stripe-like electrodes, and wherein a longitudinal direction of the first electrodes is perpendicular to a longitudinal direction of the at least one second electrode. 26. A light-emitting display device according to claim 22, wherein the portion of insulating monolayer comprises a material selected from the group consisting of acrylic resin, polyimide resin, polyamide resin, and a resin containing a high molecular compound of siloxane. 27. A light-emitting display device according to claim 22, wherein the insulating substrate comprises a planarizing organic material. 28. A light-emitting display device comprising: a first transistor and a second transistor over a substrate;an interlayer insulating film formed over the first transistor and the second transistor;a first pixel electrode and a second pixel electrode formed over the interlayer insulating film;a light-emitting layer formed over the first pixel electrode and the second pixel electrode; anda common electrode formed over the light-emitting layer,wherein the first pixel electrode and the second pixel electrode are connected to the first transistor and to the second transistor, respectively;wherein a first portion of insulating monolayer is formed in a space between the first pixel electrode and the second pixel electrode;wherein an end portion of the first portion of insulating monolayer is tapered;wherein at least one of the first pixel electrode and the second pixel electrode comprises an electrode hole containing a second portion of insulating monolayer, andwherein the first portion of insulating monolayer and the second portion of insulating monolayer are thicker than the first pixel electrode and the second pixel electrode and comprise an organic material. 29. A light-emitting display device according to claim 28, wherein the first transistor and the second transistor are current-controlling transistors. 30. A light-emitting display device according to claim 28, wherein the first portion of insulating monolayer and the second portion of insulating monolayer comprise a material selected from the group consisting of acrylic resin, polyimide resin, polyamide resin, and a resin containing a high molecular compound of siloxane. 31. A light-emitting display device according to claim 28, further comprising: a passivation film interposed between the transistors and the interlayer insulating film, the passivation film comprising an inorganic material; anda source wiring and a drain wiring, one of the source wiring and the drain wiring electrically connecting the pixel electrode to the transistor through the passivation film and the interlayer insulating film,wherein the interlayer insulating film comprises a planarizing organic material. 32. A light-emitting display device comprising: a first transistor and a second transistor over a substrate;an interlayer insulating film formed over the first transistor and the second transistor;a first pixel electrode and a second pixel electrode formed over the interlayer insulating film;a light-emitting layer formed over the first pixel electrode, the second pixel electrode and the interlayer insulating film; anda common electrode formed over the light-emitting layer,wherein the first pixel electrode and the second pixel electrode are connected to the first transistor and to the second transistor, respectively;wherein a first portion of insulating monolayer is formed in a space between the first pixel electrode and the second pixel electrode;wherein at least one of the first pixel electrode and the second pixel electrode comprises an electrode hole containing a second portion of insulating monolayer; andwherein the first portion of insulating monolayer and the second portion of insulating monolayer are made from a same insulating film and are thicker than the first pixel electrode and the second pixel electrode and comprise an organic material. 33. A light-emitting display device according to claim 32, wherein the first transistor and the second transistor are current-controlling transistors. 34. A light-emitting display device according to claim 32, wherein the first portion of insulating monolayer and the second portion of insulating monolayer comprise a material selected from the group consisting of acrylic resin, polyimide resin, polyamide resin, and a resin containing a high molecular compound of siloxane. 35. A light-emitting display device according to claim 32, further comprising: a passivation film interposed between the transistors and the interlayer insulating film, the passivation film comprising an inorganic material; anda source wiring and a drain wiring, one of the source wiring and the drain wiring electrically connecting the pixel electrode to the transistor through the passivation film and the interlayer insulating film,wherein the interlayer insulating film comprises a planarizing organic material. 36. A light-emitting display device comprising: a first transistor and a second transistor over a substrate;an interlayer insulating film formed over the first transistor and the second transistor;a first pixel electrode and a second pixel electrode formed over the interlayer insulating film;a first portion of insulating monolayer formed in a space between the first pixel electrode and the second pixel electrode;a light-emitting layer formed over the first pixel electrode and the first portion of insulating monolayer; anda third electrode formed over the light-emitting layer and overlapping the first pixel electrode,wherein the first pixel electrode is electrically connected to the first transistor through a first electrode hole in the interlayer insulating film;wherein the second pixel electrode is electrically connected to the second transistor through a second electrode hole in the interlayer insulating film;wherein a second portion of insulating monolayer is formed in each of the first electrode hole and the second electrode hole, from a same film as the first portion of insulating monolayer, andwherein the first portion of insulating monolayer and the second portion of insulating monolayer are thicker than the first pixel electrode and the second pixel electrode and comprise an organic material. 37. A light-emitting display device according to claim 36, wherein the first transistor and the second transistor are current-controlling transistors. 38. A light-emitting display device according to claim 36, wherein the first portion of insulating monolayer covers portions of the first pixel electrode and portions of the second pixel electrode. 39. A light-emitting display device according to claim 36, wherein the first portion of insulating monolayer and the second portion of insulating monolayer comprise a material selected from the group consisting of acrylic resin, polyimide resin, polyamide resin, and a resin containing a high molecular compound of siloxane. 40. A light-emitting display device according to claim 36, further comprising: a passivation film interposed between the transistors and the interlayer insulating film, the passivation film comprising an inorganic material; anda source wiring and a drain wiring, one of the source wiring and the drain wiring electrically connecting the pixel electrode to the transistor through the passivation film and the interlayer insulating film,wherein the interlayer insulating film comprises a planarizing organic material. 41. A light-emitting display device comprising: transistors over a substrate;an interlayer insulating film formed over the transistors;pixel electrodes formed over the interlayer insulating film;a light-emitting layer formed over the pixel electrodes; andan electrode formed over the light-emitting layer,wherein the pixel electrodes are each connected to a corresponding one of the transistors,wherein a first portion of insulating monolayer is formed in at least one of spaces between two of the pixel electrodes, andwherein at least one of the pixel electrodes is connected to one of the transistors through an electrode hole in the interlayer insulating film, the electrode hole being filled up with a second portion of insulating monolayer, andwherein the first portion of insulating monolayer and the second portion of insulating monolayer are thicker than the pixel electrodes and comprise an organic material. 42. A light-emitting display device according to claim 41, wherein the transistors are current-controlling transistors. 43. A light-emitting display device according to claim 41, wherein the first portion of insulating monolayer and the second portion of insulating monolayer comprise a material selected from the group consisting of acrylic resin, polyimide resin, polyamide resin, and a resin containing a high molecular compound of siloxane. 44. A light-emitting display device according to claim 41, further comprising: a passivation film interposed between the transistors and the interlayer insulating film, the passivation film comprising an inorganic material; anda source wiring and a drain wiring, one of the source wiring and the drain wiring electrically connecting the pixel electrode to the transistor through the passivation film and the interlayer insulating film,wherein the interlayer insulating film comprises a planarizing organic material. 45. A light-emitting display device comprising: a first transistor and a second transistor over a substrate;an interlayer insulating film formed over the first transistor and the second transistor;a first pixel electrode and a second pixel electrode formed over the interlayer insulating film;an insulating monolayer thicker than the first pixel electrode and the second pixel electrode formed in a space between the first pixel electrode and the second pixel electrode and comprising an organic material;a light-emitting layer formed over the first pixel electrode, the second pixel electrode, and the insulating monolayer; anda third electrode formed over the light-emitting layer and opposed to the first pixel electrode and to the second pixel electrode,wherein the first pixel electrode and the second pixel electrode are electrically connected to the first transistor and the second transistor, respectively. 46. A light-emitting display device according to claim 45, wherein the first transistor and the second transistor are current-controlling transistors. 47. A light-emitting display device according to claim 45, wherein the insulating monolayer comprises a material selected from the group consisting of acrylic resin, polyimide resin, polyamide resin, and a resin containing a high molecular compound of siloxane. 48. A light-emitting display device according to claim 45, further comprising: a passivation film interposed between the transistors and the interlayer insulating film, the passivation film comprising an inorganic material; anda source wiring and a drain wiring, one of the source wiring and the drain wiring electrically connecting the pixel electrode to the transistor through the passivation film and the interlayer insulating film,wherein the interlayer insulating film comprises a planarizing organic material. 49. A light-emitting display device comprising: an insulating layer;a first electrode formed over the insulating layer;a portion of insulating monolayer formed over the insulating layer and covering a top portion of the first electrode, the portion of insulating monolayer being thicker than the first electrode, and comprising an organic material;a light-emitting layer formed over the portion of insulating monolayer, and over and in contact with the first electrode;a second electrode formed over the light-emitting layer and opposed to the first electrode. 50. A light-emitting display device according to claim 49, wherein the portion of insulating monolayer comprises a material selected from the group consisting of acrylic resin, polyimide resin, polyamide resin, and a resin containing a high molecular compound of siloxane. 51. A light-emitting display device according to claim 49, wherein the insulating layer comprises a planarizing organic material.
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