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Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also co

Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

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1. A method of producing a transparent conducting oxide (TCO) material, comprising: positioning a substrate within a process chamber;providing a TCO target in the process chamber, wherein the TCO target comprises a host oxide and an amount of an added oxide; andfrom the target, depositing a TCO meta

1. A method of producing a transparent conducting oxide (TCO) material, comprising: positioning a substrate within a process chamber;providing a TCO target in the process chamber, wherein the TCO target comprises a host oxide and an amount of an added oxide; andfrom the target, depositing a TCO metal oxide formed from the host and added oxides to form a thin film on the substrate,wherein optical transmission of the thin film formed with the TCO metal oxide is greater than optical transmission of a second thin film formed from a target comprising the host oxide and free of the amount of the added oxide,wherein the thin film formed with the TCO metal oxide has an electrical quality at least as great as the electrical quality of the second thin film, andwherein the depositing comprises sputter depositing the TCO metal oxide in a mixture of less than about 0.8 percent oxygen and argon. 2. The method of claim 1, wherein the added oxide is a high-permittivity oxide, whereby the thin film formed from the TCO metal oxide has a permittivity greater than the second thin film. 3. The method of claim 2, wherein, when the depositing is done at a first oxygen partial pressure, the thin film formed with the TCO metal oxide has a first carrier concentration and, when the depositing is performed at a second oxygen partial pressure greater than the first oxygen partial pressure, the thin film formed with the TCO metal oxide has a second carrier concentration at least as great as the first carrier concentration. 4. A method of producing a transparent conducting oxide (TCO) material, comprising: positioning a substrate within a process chamber;providing a TCO target in the process chamber, wherein the TCO target comprises a host oxide and an amount of an added oxide; andfrom the target, depositing a TCO metal oxide formed from the host and added oxides to form a thin film on the substrate,wherein optical transmission of the thin film formed with the TCO metal oxide is greater than optical transmission of a second thin film formed from a target comprising the host oxide and free of the amount of the added oxide,wherein the thin film formed with the TCO metal oxide has an electrical quality at least as great as the electrical quality of the second thin film, andwherein the depositing comprises chemical vapor deposition (CVD) or spray deposition of the TCO metal oxide in a mixture of oxygen and argon containing less than about 0.6 percent of oxygen, and wherein the added oxide contains a high-permittivity addition. 5. The method of claim 1, wherein the depositing comprises depositing the TCO metal oxide from the TCO target, which comprises a metal target, in the mixture of oxygen and argon containing less than about 0.6 percent of oxygen. 6. The method of claim 1, wherein the mixture further comprises hydrogen, the mixture containing less than about 0.6 percent of oxygen. 7. The method of claim 1, wherein the depositing is performed at about 350° C. to 500° C. 8. The method of claim 2, wherein the added oxide is selected from the group of high-permittivity oxides consisting of: Nb2O5, V2O5, TiO2, ZrO2, and HfO2. 9. The method of claim 2, wherein the amount of the added oxide is about 1 weight percent. 10. A method of producing a transparent conducting oxide (TCO) material, comprising: positioning a substrate within a process chamber;providing a TCO target in the process chamber, wherein the TCO target comprises a host oxide and an amount of an added oxide; andfrom the target, depositing a TCO metal oxide formed from the host and added oxides to form a thin film on the substrate,wherein optical transmission of the thin film formed with the TCO metal oxide is greater than optical transmission of a second thin film formed from a target comprising the host oxide and free of the amount of the added oxide,wherein the thin film formed with the TCO metal oxide has an electrical quality at least as great as the electrical quality of the second thin film, andwherein, during the depositing step, an ambient environment of argon and less than about 0.8 percent oxygen is provided in the process chamber. 11. The method of claim 10, wherein the ambient environment comprises less than about 0.6 percent oxygen. 12. A method of forming a transparent conducting oxide (TCO) thin film, comprising: positioning a substrate within a deposition chamber;positioning a target in the deposition chamber, wherein the target comprises a host oxide and an added amount of an oxide having a permittivity greater than or equal to a permittivity of ZrO2; andusing the target, depositing a thin film of material on the substrate, wherein the depositing includes providing an ambient environment comprising a mixture of argon and oxygen in the deposition chamber and wherein a process window defined by a range of differing percentage values of the oxygen in the mixture during the depositing is at least about 0.1 percent to obtain a predefined electrical quality in the thin film,wherein the range of the differing percentage values of the oxygen is at least about 0.3 percent, andwherein the oxygen in the mixture is controlled to be in the range of 0.25 percent to 0.625, whereby the range of the process window is 0.375 percent. 13. The method of claim 12, wherein the added oxide is selected from the group consisting of: Nb2O5, V2O5, TiO2, ZrO2, and HfO2 and the mixture includes less than about 0.625 percent oxygen. 14. The method of claim 13, wherein the host oxide comprises In2O3:Sn, SnO2:F, or ZnO:Al. 15. The method of claim 13, wherein the amount of the added oxide in the target in an amount of about 1 weight percent. 16. The method of claim 12, wherein the predefined electrical quality is resistivity of the thin film, whereby the resistivity has a value within a preset acceptable range when the mixture is controlled during the depositing to contain a percentage of the oxygen falling within the range of the process window. 17. The method of claim 12, wherein the thin film has an optical quality that has a value that is greater than a value of the optical quality for a thin film formed from a target including the host oxide without the amount of the added oxide. 18. The method of claim 17, wherein the optical quality is NIR transmission. 19. A method of forming a transparent conducting oxide (TCO) thin film, comprising: positioning a substrate within a process chamber;positioning a TCO target in the process chamber, wherein the target comprises a host oxide and an added amount of an oxide selected from the group consisting of Nb2O5, V2O5, TiO2, ZrO2, and HfO2; andperforming sputtering with the target to deposit a thin film on the substrate,wherein the depositing includes providing an ambient environment comprising a mixture of argon and oxygen in the process chamber,wherein the thin film has NIR transmission greater than NIR transmission for a second thin film formed by performing the sputtering using a target including the host oxide without the amount of the added oxide,wherein the oxygen in the mixture is controlled to be in a range of 0.25 percent to 0.625, andwherein the thin film and the second thin film have substantially equivalent values of resistivity when formed with the mixture controlled to a value across the range of the oxygen. 20. The method of claim 19, wherein the host oxide comprises In2O3:Sn, SnO2:F, or ZnO:Al. 21. The method of claim 19, wherein the amount of the added oxide in the target is at least about 1 weight percent. 22. The method of claim 10, wherein, when the depositing is done at a first oxygen partial pressure, the thin film formed with the TCO metal oxide has a first carrier concentration and, when the depositing is performed at a second oxygen partial pressure greater than the first oxygen partial pressure, the thin film formed with the TCO metal oxide has a second carrier concentration at least as great as the first carrier concentration. 23. The method of claim 10, wherein the depositing is performed at about 350° C. to 500° C. 24. The method of claim 10, wherein the added oxide is selected from the group of high-permittivity oxides consisting of: Nb2O5, V2O5, TiO2, ZrO2, and HfO2. 25. The method of claim 10, wherein the amount of the added oxide is about 1 weight percent. 26. A method of forming a transparent conducting oxide (TCO) thin film, comprising: positioning a substrate within a deposition chamber;positioning a target in the deposition chamber, wherein the target comprises a host oxide and an added amount of an oxide having a permittivity greater than or equal to a permittivity of ZrO2; andusing the target, depositing a thin film of material on the substrate,wherein the depositing includes providing an ambient environment comprising a mixture of argon and oxygen in the deposition chamber,wherein a process window defined by a range of differing percentage values of the oxygen in the mixture during the depositing is at least about 0.1 percent to obtain a predefined electrical quality in the thin film, andwherein the added oxide is selected from the group consisting of: Nb2O5, V2O5, TiO2, ZrO2, and HfO2 and the mixture includes less than about 0.625 percent oxygen. 27. The method of claim 26, wherein the host oxide comprises In2O3:Sn, SnO2:F, or ZnO:Al. 28. The method of claim 26, wherein the amount of the added oxide in the target is an amount of about 1 weight percent. 29. The method of claim 26, wherein the predefined electrical quality is resistivity of the thin film, whereby the resistivity has a value within a preset acceptable range when the mixture is controlled during the depositing to contain a percentage of the oxygen falling within the range of the process window. 30. The method of claim 26, wherein the thin film has an optical quality that has a value that is greater than a value of the optical quality for a thin film formed from a target including the host oxide without the amount of the added oxide.