Display device, method for manufacturing display device, and SOI substrate
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/786
H01L-021/84
출원번호
US-0249308
(2011-09-30)
등록번호
US-8748243
(2014-06-10)
우선권정보
JP-2007-106578 (2007-04-13)
발명자
/ 주소
Yamazaki, Shunpei
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson, Eric J.
인용정보
피인용 횟수 :
2인용 특허 :
57
초록▼
A manufacturing method is provided which achieves an SOI substrate with a large area and can improve productivity of manufacture of a display device using the SOI substrate. A plurality of single-crystalline semiconductor layers are bonded to a substrate having an insulating surface, and a circuit i
A manufacturing method is provided which achieves an SOI substrate with a large area and can improve productivity of manufacture of a display device using the SOI substrate. A plurality of single-crystalline semiconductor layers are bonded to a substrate having an insulating surface, and a circuit including a transistor is formed using the single-crystalline semiconductor layers, so that a display device is manufactured. Single-crystalline semiconductor layers separated from a single-crystalline semiconductor substrate are applied to the plurality of single-crystalline semiconductor layers. Each of the single-crystalline semiconductor layers has a size corresponding to one display panel (panel size).
대표청구항▼
1. A method for manufacturing a display device, comprising the steps of: forming a plurality of projected portions each having an area including one panel in a first substrate by etching the first substrate;implanting an ion into the first substrate to form a plurality of single-crystalline semicond
1. A method for manufacturing a display device, comprising the steps of: forming a plurality of projected portions each having an area including one panel in a first substrate by etching the first substrate;implanting an ion into the first substrate to form a plurality of single-crystalline semiconductor layers each having an area including one panel in the plurality of projected portions, respectively;bonding the plurality of single-crystalline semiconductor layers to a second substrate with an insulating layer interposed therebetween;exposing a first single-crystalline semiconductor layer and a second single-crystalline semiconductor layer each selected from the plurality of single-crystalline semiconductor layers at a time, wherein each of the first single-crystalline semiconductor layer and the second single-crystalline semiconductor layer has an area including one panel; andpatterning the first single-crystalline semiconductor layer and the second singel-crystalline semiconductor layer to form a first display portion over the second substrate by using a patterned first single-crystalline semiconductor layer and a second display portion over the second substrate by using a patterned second single-crystalline semiconductor layer,wherein the insulating layer is a silicon oxide layer formed by a chemical vapor deposition method using an organic silane as a source gas. 2. The method for manufacturing a display device according to claim 1, wherein the organic silane is one selected from the group consisting of tetraethoxysilane, trimethylsilane, tetramethylsilane, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, hexamethyldisilazane, triethoxysilane, and trisdimethylaminosilane. 3. The method for manufacturing a display device according to claim 1, wherein the first single-layer semiconductor layer and the second single-crystalline semiconductor layer are provided in a range exposed one time with a light exposure apparatus. 4. The method for manufacturing a display device according to claim 1, wherein the first substrate is a semiconductor substrate. 5. The method for manufacturing a display device according to claim 1, wherein the second substrate is one selected from the group consisting of an aluminosilicate glass, an aluminoborosilicate glass, a barium borosilicate glass, a quartz substrate, a sapphire substrate, and a ceramic substrate. 6. The method for manufacturing a display device according to claim 1, wherein the area including one panel is less than 10 inches in diagonal line. 7. A method for manufacturing a display device, comprising the steps of: forming a plurality of projected portions each having an area including one panel in a first substrate by etching the first substrate;implanting an ion into the first substrate to form a plurality of single-crystalline semiconductor layers each having an area including one panel in the plurality of projected portions, respectively;bonding the plurality of single-crystalline semiconductor layers to a second substrate with an insulating layer interposed therebetween; andpatterning the plurality of single-crystalline semiconductor layers to form a plurality of display portions over the second substrate by using each of a plurality of patterned single-crystalline semiconductor layers,wherein the insulating layer is a silicon oxide layer formed by a chemical vapor deposition method using an organic silane as a source gas. 8. The method for manufacturing a display device according to claim 7, wherein the organic silane is one selected from the group consisting of tetraethoxysilane, trimethylsilane, tetramethylsilane, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, hexamethyldisilazane, triethoxysilane, and trisdimethylaminosilane. 9. The method for manufacturing a display device according to claim 7, wherein the first substrate is a semiconductor substrate. 10. The method for manufacturing a display device according to claim 7, wherein the second substrate is one selected from the group consisting of an aluminosilicate glass, an aluminoborosilicate glass, a barium borosilicate glass, a quartz substrate, a sapphire substrate, and a ceramic substrate. 11. The method for manufacturing a display device according to claim 7, wherein the area including one panel is less than 10 inches in diagonal line. 12. The method for manufacturing a display device according to claim 7, wherein the plurality of single-crystalline semiconductor layers including at least a first single-crystalline semiconductor layer, a second single-crystalline semiconductor layer, a third single-crystalline semiconductor layer, and a fourth single-crystalline semiconductor layer each having the area including one panel. 13. The method for manufacturing a display device according to claim 12, further comprising the steps of: exposing a first group including at least the first single-crystalline semiconductor layer and the second single-crystalline semiconductor layer after bonding the plurality of single-crystalline semiconductor layers to the second substrate; andexposing a second group including at least the third single-crystalline semiconductor layer and the fourth single-crystalline semiconductor layer after exposing the first group and before patterning the plurality of single-crystalline semiconductor layers. 14. A method for manufacturing a display device, comprising the steps of: forming a plurality of projected portions each having an area including one panel in a semiconductor substrate by etching the semiconductor substrate;implanting an ion into the semiconductor substrate to form an ion-doped layer in each of the plurality of projected portions, respectively;bonding the plurality of projected portions to a base substrate with an insulating layer interposed therebetween;forming a plurality of semiconductor layers over the base substrate by separating the plurality of projected portions each along a part of the ion-doped layer, wherein the plurality of semiconductor layers including at least a first semiconductor layer and a second semiconductor layer each having the area including one panel;exposing a group including at least the first semiconductor layer and the second semiconductor layer; andpatterning at least the first semiconductor layer and the second semiconductor layer to form a first display portion using a patterned first semiconductor layer and to form a second display portion using a patterned second semiconductor layer,wherein the step of patterning is performed after the step of bonding, andwherein the insulating layer is a silicon oxide layer formed by a chemical vapor deposition method using an organic silane as a source gas. 15. The method for manufacturing a display device according to claim 14, wherein the organic silane is one selected from the group consisting of tetraethoxysilane, trimethylsilane, tetramethylsilane, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, hexamethyldisilazane, triethoxysilane, and trisdimethylaminosilane. 16. The method for manufacturing a display device according to claim 14, wherein the group including at least the first semiconductor layer and the second semiconductor layer is provided in a range exposed one time with a light exposure apparatus. 17. The method for manufacturing a display device according to claim 14, wherein the semiconductor substrate is a single-crystalline semiconductor substrate. 18. The method for manufacturing a display device according to claim 14, wherein the base substrate is one selected from the group consisting of an aluminosilicate glass, an aluminoborosilicate glass, a barium borosilicate glass, a quartz substrate, a sapphire substrate, and a ceramic substrate. 19. The method for manufacturing a display device according to claim 14, wherein the area including one panel is less than 10 inches in diagonal line.
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