SOFC stack having a high temperature bonded ceramic interconnect and method for making same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01M-008/00
H01M-008/10
H01M-008/24
H01M-002/08
H01M-002/14
출원번호
US-0696624
(2007-04-04)
등록번호
US-8771901
(2014-07-08)
발명자
/ 주소
Donahue, William J.
Kwon, Oh-Hun
Mahoney, F. Michael
Pietras, John D.
출원인 / 주소
Saint-Gobain Ceramics & Plastics, Inc.
대리인 / 주소
Young, Robert N.
인용정보
피인용 횟수 :
0인용 특허 :
69
초록▼
The present disclosure is directed to an integrated SOFC stack including, a first cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode layer overlying the electrolyte layer. The SOFC stack also includes a second cell having a cathode layer, an electrolyte layer
The present disclosure is directed to an integrated SOFC stack including, a first cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode layer overlying the electrolyte layer. The SOFC stack also includes a second cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode overlying the electrolyte layer. The SOFC stack further includes a ceramic interconnect layer between the first cell and the second cell, the ceramic interconnect layer having a first high temperature bonding region along the interfacial region between the first cell and the ceramic interconnect layer. The ceramic interconnect layer also includes a second high temperature bonding region along the interfacial region between the second cell and the ceramic interconnect layer.
대표청구항▼
1. An integrated solid oxide fuel cell (SOFC) stack comprising: a first cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode layer overlying the electrolyte layer;a second cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an ano
1. An integrated solid oxide fuel cell (SOFC) stack comprising: a first cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode layer overlying the electrolyte layer;a second cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode overlying the electrolyte layer, wherein the first cell and the second cell include gas delivery channels formed within the cathode layer or the anode layer; anda planar ceramic interconnect layer having a thickness of not less than 1 micron and not greater than 15 microns between the first cell and the second cell, the ceramic interconnect layer having a first high temperature bonding region along an interfacial region between the first cell and the ceramic interconnect layer, and a second high temperature bonding region along an interfacial region between the second cell and the ceramic interconnect layer,wherein the first and second high temperature bonding regions include a diffusion bond between the ceramic interconnect layer and the first cell and a diffusion bond between the ceramic interconnect layer and the second cell, and wherein the diffusion bonds have a diffusion region having a thickness not less than 10 microns and not greater than 300 microns. 2. The integrated solid oxide fuel cell (SOFC) stack of claim 1, wherein the ceramic interconnect layer includes a percent porosity of less than 3.0 vol %. 3. The integrated solid oxide fuel cell (SOFC) stack of claim 1, wherein the diffusion bond between the ceramic interconnect layer and the first cell is disposed along the entire interfacial region between the first cell and the ceramic interconnect layer. 4. The integrated solid oxide fuel cell (SOFC) stack of claim 1, wherein the diffusion bond between the ceramic interconnect layer and the second cell is disposed along the entire interfacial region between the second cell and the ceramic interconnect layer. 5. A method for forming an integrated solid oxide fuel cell (SOFC) stack comprising: forming a first cell structure, the first cell structure having a first electrode layer, an electrolyte layer overlying the first electrode layer, and a second electrode layer overlying the electrolyte layer;forming a ceramic interconnect layer overlying the first cell structure;forming a second cell structure, the second cell structure having a first electrode layer, an electrolyte layer overlying the first electrode layer, and a second electrode layer overlying the electrolyte layer; andhot pressing the first cell structure, the ceramic interconnect layer, and the second cell structure together during a single hot pressing cycle to integrally bond the first cell structure, the ceramic interconnect layer and the second cell structure to form an integrated SOFC stack,wherein the hot pressing is conducted at a temperature not less than 1200° C. and not greater than 1,800° C. and a pressure of not less than 0.5 MPa and not greater than 10 MPa,wherein the ceramic interconnect layer of the integrated SOFC stack is planar and has a thickness of not less than 1 micron and not greater than 15 microns,wherein the integrated SOFC stack includes a diffusion region along an interfacial region of the ceramic interconnect layer and the first cell structure, the second cell structure, or a combination thereof, andwherein the first cell structure and the second cell structure include gas delivery channels formed within the first electrode layer or the second electrode layer. 6. The method of claim 5, wherein hot pressing includes pressing the first cell structure, the ceramic interconnect layer, and the second cell structure together to form an integrally bonded structure in one thermal cycle. 7. The method of claim 5, wherein the ceramic interconnect layer electrically connects the first cell structure and the second cell structure. 8. The method of claim 5, wherein hot pressing includes forming a first high temperature bond region between the ceramic interconnect layer and an adjacent electrode layer in the first cell structure and a second high temperature bond region between the ceramic interconnect layer and an adjacent electrode layer in the second cell structure. 9. The method of claim 8, wherein forming the first and second high temperature bond regions includes forming a diffusion bond region having a thickness not less than 10 microns and not greater than 300 microns. 10. The method of claim 5, wherein the hot pressing is performed without the aid of a restraining die. 11. The method of claim 5, wherein the forming of the first cell structure and the second cell structure is performed without the addition of pore formers. 12. A method for forming an integrated, densified solid oxide fuel cell (SOFC) component comprising: forming a first green cell structure having a first green electrode layer, a green electrolyte layer overlaying the first green electrode layer, and a second green electrode layer overlaying the green electrolyte layer;forming a second green cell structure having a first green electrode layer, a green electrolyte layer overlaying the first green electrode layer, and a second green electrode layer overlaying the green electrolyte layer;forming a green ceramic interconnect layer disposed between the first green cell structure and the second green cell structure; andhot pressing the first green cell structure, the green ceramic interconnect layer, and the second green cell structure together during a single hot pressing cycle to integrally bond the first green cell structure, the green ceramic interconnect layer and the second green cell structure to form an integrated, densified SOFC component,forming gas delivery channels within a resultant first electrode layer or a resultant second electrode layer of a resultant first or second cell structure of the integrated, densified SOFC component;wherein a resultant interconnect layer of the integrated, densified SOFC component is planar and has a thickness of not less than 1 micron and not greater than 15 microns, and wherein the hot pressing is conducted at a temperature not less than 1200° C. and not greater than 1,800° C. and a pressure of not less than 0.5 MPa and not greater than 10 MPa.
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