IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0415159
(2012-03-08)
|
등록번호 |
US-8772180
(2014-07-08)
|
발명자
/ 주소 |
- Ou, Ya
- Ponoth, Shom
- Spooner, Terry A.
|
출원인 / 주소 |
- International Business Machines Corporation
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
6 |
초록
▼
An interconnect structure and method of fabricating the same is provided. More specifically, the interconnect structure is a defect free capped interconnect structure. The structure includes a conductive material formed in a trench of a planarized dielectric layer which is devoid of cap material. Th
An interconnect structure and method of fabricating the same is provided. More specifically, the interconnect structure is a defect free capped interconnect structure. The structure includes a conductive material formed in a trench of a planarized dielectric layer which is devoid of cap material. The structure further includes the cap material formed on the conductive material to prevent migration. The method of forming a structure includes selectively depositing a sacrificial material over a dielectric material and providing a metal capping layer over a conductive layer within a trench of the dielectric material. The method further includes removing the sacrificial material with any unwanted deposited or nucleated metal capping layer thereon.
대표청구항
▼
1. A method of forming a structure, comprising: forming at least one trench in a dielectric material, which removes at least a portion of an upper surface of the dielectric material;depositing a conductive layer within the at least one trench;selectively depositing a sacrificial material on remainin
1. A method of forming a structure, comprising: forming at least one trench in a dielectric material, which removes at least a portion of an upper surface of the dielectric material;depositing a conductive layer within the at least one trench;selectively depositing a sacrificial material on remaining portions of the upper surface of the dielectric material;providing a metal capping layer over the conductive layer, wherein the providing the metal capping layer results in a plurality of isolated deposits of a nucleated capping material being formed on the sacrificial material; andremoving the sacrificial material with the plurality of isolated deposits of the nucleated capping material;wherein the removing of the sacrificial material with the plurality of isolated deposits of the nucleated capping material is one of: a UV assisted thermal composition process, followed by a solvent or water rinse;a thermal decomposition process followed by a solvent or water rinse; anda reducing plasma etch followed by a solvent or water rinse. 2. The method of claim 1, wherein the removing of the sacrificial material does not significantly chemically damage the dielectric material, the conductive layer or a liner. 3. The method of claim 1, wherein the depositing of the sacrificial material is selective to the dielectric material. 4. The method of claim 1, wherein the sacrificial material is hydrophobic, a polyxylylene material, or a silyating agent. 5. The method of claim 1, wherein the metal capping layer is formed in contact only with the conductive layer. 6. The method of claim 5, wherein the metal capping layer is one of CoWB and CoWP of different compositions. 7. The method of claim 1, wherein the conductive layer is free of the sacrificial material. 8. A method of manufacturing a structure, comprising: forming a layered structure of a first dielectric material with a first metal wire in a first trench of the first dielectric material and a second dielectric material with a second metal wire;exposing a top surface of the second metal wire in a second trench formed in the second dielectric material, wherein the forming the second trench removes a portion of an upper surface of the second dielectric layer and extends down to and contacts the first metal wire;selectively depositing a sacrificial material on a remaining portion of the upper surface of the second dielectric material;depositing a metal capping layer over the second metal wire, which causes a plurality of isolated unwanted depositing and/or nucleation of the metal capping layer on the sacrificial material; andundercutting the sacrificial material and the unwanted deposited and/or nucleated metal capping layer. 9. The method of claim 8, wherein the undercutting is performed by one of: a UV assisted thermal composition process, followed by a solvent or water rinse;a thermal decomposition process followed by a solvent or water rinse; anda reducing plasma etch followed by a solvent or water rinse. 10. The method of claim 8, wherein the undercutting does not significantly chemically damage the second dielectric material, the second metal wire or a liner. 11. The method of claim 8, wherein the depositing of the sacrificial material is selective to the second dielectric material. 12. The method of claim 11, wherein the sacrificial material is hydrophobic, a polyxylylene material, or a silyating agent. 13. The method of claim 8, wherein the metal capping layer is formed in contact only with the second metal wire. 14. The method of claim 13, wherein the metal capping layer is one of CoWB and CoWP of different compositions. 15. The method of claim 14, wherein the second metal wire is free of the sacrificial material. 16. A method of manufacturing a structure, comprising: forming a trench in a portion of a top surface of a planarized dielectric layer, wherein the forming the trench removes the portion of the top surface of the planarized dielectric layer;forming a conductive layer in the trench of the planarized dielectric layer, wherein a top surface of the conductive layer is formed at a coplanar level as a remaining portion of the top surface of the planarized dielectric layer;forming a liner completely lining sidewalls and a bottom of the trench;selectively depositing a sacrificial layer on the remaining portion of the top surface of the planarized dielectric layer;forming a cap layer on the conductive layer to prevent migration, wherein the forming the cap layer results in a plurality of isolated deposits of unwanted deposited and/or rogue nucleated metal capping layer being formed on the sacrificial layer; andremoving the sacrificial layer including the plurality of isolated deposits of the unwanted deposited and/or rogue nucleated metal capping layer deposited on the sacrificial layer during the forming of the cap layer, such that the planarized dielectric layer is devoid of the plurality of isolated deposits of the unwanted deposited and/or rogue nucleated metal capping layer. 17. The method of claim 16, wherein: the cap layer is one of CoWB and CoWP of different compositions;the liner extends below portions of the conductive layer within the trench;the liner is tantalum, tantalum nitride, titanium, titanium nitride or Ruthenium;the planarized dielectric layer is silicon oxide, carbon doped oxide, SiCxOyHz or a porous dielectric material; andthe sacrificial layer is deposited on an exposed surface of the planarized dielectric layer and the conductive layer is free of the sacrificial layer. 18. The method of claim 1, wherein a top surface of the conductive layer is formed at a coplanar level as a top surface of the planarized dielectric material.
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