A device, such as a switch structure, is provided. The switch structure can include a contact and a conductive element each respectively disposed on a substrate. The conductive element can be composed substantially of metallic material, and can be configured to be deformable between a first position
A device, such as a switch structure, is provided. The switch structure can include a contact and a conductive element each respectively disposed on a substrate. The conductive element can be composed substantially of metallic material, and can be configured to be deformable between a first position, in which the conductive element is separated from the contact by a separation distance, and a second position, in which the conductive element contacts the contact and stores mechanical energy. The conductive element can be further configured such that, subsequent to being deformed into the second position at a temperature between about room temperature and about half of a melting temperature of the metallic material for a cumulative time of at least 107 seconds, the separation distance in the absence of external forces varies by less than 20 percent over the cumulative time. Associated methods are also provided.
대표청구항▼
1. A device comprising: a substrate;a contact disposed on said substrate; anda single-piece structure arranged both as an electrically conductive element and a structural element, disposed on said substrate and composed substantially of metallic material so that a singular time-dependent plastic def
1. A device comprising: a substrate;a contact disposed on said substrate; anda single-piece structure arranged both as an electrically conductive element and a structural element, disposed on said substrate and composed substantially of metallic material so that a singular time-dependent plastic deformation of the single-piece structure is substantially determined by the time-dependent plastic deformation of constituent metallic material of the single-piece structure, said single-piece structure being configured to be deformable between a first position in which said structure is separated from said contact by a separation distance and a second position in which said single-piece structure contacts said contact and stores mechanical energy,wherein said single-piece structure is configured such that, subsequent to being deformed into the second position at a temperature between about room temperature and about half of a melting temperature of said metallic material for a cumulative time of at least 107 seconds, the separation distance in the absence of external forces varies by less than 20 percent over the cumulative time. 2. The device of claim 1, wherein said single-piece structure establishes electrical communication with said contact when in the second position. 3. The device of claim 1, wherein said single-piece structure comprises a structure selected from the group consisting of a cantilever, a fixed-fixed beam, a torsional element, and a diaphragm. 4. The device of claim 1, further comprising an electrode disposed on said substrate and configured to be charged so as to apply an electrostatic force configured to urge said single-piece structure toward the second position. 5. The device of claim 1, wherein said single-piece structure is configured to store energy during deformation sufficient to cause said single-piece structure to substantially assume the first position in the absence of external forces. 6. The device of claim 1, wherein said contact and said single-piece structure are part of a microelectromechanical device or a nanoelectromechanical device. 7. The device of claim 1, wherein said single-piece structure has a surface area-to-volume ratio that is greater than or equal to 103 m−1. 8. The device of claim 1, further comprising a circuit having a first side and a second side at different electric potentials, wherein said contact and single-piece structure are respectively connected to one and the other of said first and second sides of said circuit, such that deformation of said single-piece structure between the first and second positions acts to respectively pass and interrupt a current therethrough. 9. The device of claim 8, wherein said first side includes a power source configured to supply a current of at least 1 mA that oscillates at a frequency less than or equal to about 1 kHz. 10. The device of claim 1, wherein said single-piece structure includes an anchor extending from said substrate and having an end coupled to said anchor so as to be cantilevered therefrom. 11. The device of claim 10, wherein said single-piece structure and said anchor define therebetween an angle, and wherein said single-piece structure is configured such that, subsequent to being deformed into the second position at a temperature between about room temperature and about half of a melting temperature of said metallic material for a cumulative time of at least 107 seconds, the angle in the absence of external forces varies by less than 0.1 percent. 12. The device of claim 10, wherein said single-piece structure is configured such that, when said single-piece structure is deformed into the second position at a temperature between about room temperature and about half of a melting temperature of said metallic material, a maximum, non-localized, steady-state strain rate in said anchor remains less than about 10−12 s−1. 13. The device of claim 10, wherein said single-piece structure is configured such that an initial deformation of said single-piece structure into the second position induces a first elastic strain in said anchor and, subsequent to being deformed into the second position at a temperature between about room temperature and about half of a melting temperature of said metallic material for a cumulative time of at least 107 seconds, said anchor experiences a maximum, non-local total plastic strain of less than about half of the first elastic strain. 14. The device of claim 10, wherein said metallic material includes an alloy of at least 65 atomic percent nickel and at least 1 atomic percent tungsten and said single-piece structure is configured such that, when said single-piece structure is deformed between the first and second positions, a stress in said anchor is less than 1000 MPa. 15. The device of claim 10, wherein said metallic material includes at least 80 atomic percent gold and said single-piece structure is configured such that, when said single-piece structure is deformed between the first and second positions, a stress in said anchor is less than 20 MPa. 16. The device of claim 10, wherein said single-piece structure comprises a beam having a length and a thickness, and wherein the length is less than about 200 times greater than the thickness and is less than about 1000 times the separation distance. 17. The device of claim 16, wherein said contact is disposed so as to oppose said single-piece structure over an area defined by an overlap length that is within 20 percent of a free end of said beam. 18. A method comprising: providing a substrate;forming a contact on the substrate;arranging at least one single-piece structure both as an electrically conductive element and a structural element;forming the single-piece structure substantially of metallic material on the substrate so that a singular time-dependent plastic deformation of the single-piece structure is substantially determined by the time-dependent plastic deformation of constituent metallic material of the single-piece structure, the single-piece structure including an anchor extending from the substrate and having an end coupled to the anchor so as to be cantilevered therefrom, the anchor and the single-piece structure defining an angle therebetween;deforming the single-piece structure, at a temperature between about room temperature and about half of a melting temperature of the metallic material, between a first position, in which the single-piece structure is separated from the contact by a separation distance, and a second position, in which the single-piece structure contacts the contact and stores energy, the single-piece structure occupying the second position for a cumulative time of at least 107 seconds; andsubsequent to said deforming the single-piece structure, removing external forces from the single-piece structure, such that the single-piece structure returns to the first position and the angle varies by less than 0.1 percent. 19. The method of claim 18, further comprising forming an electrode on the substrate, the electrode being configured to establish an electrostatic force configured to urge the single-piece structure toward the second position. 20. The method of claim 18, wherein said forming a single-piece structure on the substrate includes forming a single-piece structure having a surface area-to-volume ratio that is greater than or equal to 103 m−1. 21. The method of claim 18, further comprising enclosing the contact and single-piece structure between the substrate and a protective cap. 22. The method of claim 18, wherein said forming a single-piece structure substantially of metallic material includes forming a single-piece structure substantially of an alloy of at least 65 atomic percent nickel and at least 1 atomic percent tungsten. 23. The method of claim 18, further comprising: respectively connecting the contact and single-piece structure to opposing sides of a circuit, the opposing sides being at different electric potentials when the opposing sides are disconnected; andselectively deforming the single-piece structure between the first and second positions so as to respectively pass and interrupt a current therethrough. 24. The method of claim 23, wherein said selectively deforming the single-piece structure between the first and second position so as to respectively pass and interrupt a current therethrough includes selectively deforming the single-piece structure between the first and second positions so as to respectively pass and interrupt a current with an amplitude of at least about 1 mA and an oscillation frequency of less than or equal to about 1 kHz. 25. The method of claim 18, wherein said forming a single-piece structure includes forming a beam having a length and a thickness, and wherein the length is less than about 200 times greater than the thickness and is less than about 1000 times the separation distance. 26. The method of claim 25, wherein said forming a contact and single-piece structure includes forming a contact so as to oppose the single-piece structure over an area defined by an overlap length that is within 20 percent of a free end of the cantilevered beam. 27. A device comprising: a substrate;a contact disposed on said substrate; andsingle-piece structure arranged both as an electrically conductive element and a structural element disposed on said substrate and composed substantially of metallic material having a singular time-dependent plastic deformation, said single-piece structure being configured to be deformable between a first position in which said single-piece structure is separated from said contact by a separation distance and a second position in which said single-piece structure contacts said contact and stores mechanical energy,wherein said single-piece structure is configured such that, subsequent to being deformed into the second position at a temperature between about room temperature and about half of a melting temperature of said metallic material for a cumulative time of at least 107 seconds, the separation distance in the absence of external forces applied to the single-piece structure varies by less than 20 percent over the cumulative time, wherein the amount of mechanical energy which remains stored in said single-piece structure for the cumulative time is sufficient to cause the single-piece structure to substantially assume the first position from the second position.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (40)
Prophet, Eric M., Anchors for micro-electro-mechanical systems (MEMS) devices.
Chow, Lap-Wai; Hsu, Tsung-Yuan; Hyman, Daniel J.; Loo, Robert Y.; Ouyang, Paul; Schaffner, James H.; Schmitz, Adele; Schwartz, Robert N., CMOS-compatible MEM switches and method of making.
Lap-Wai Chow ; Tsung-Yuan Hsu ; Daniel J. Hyman ; Robert Y. Loo ; Paul Ouyang ; James H. Schaffner ; Adele Schmitz ; Robert N. Schwartz, CMOS-compatible MEM switches and method of making.
Wang, Xuefeng; Subramanian, Kanakasabapathi; Keimel, Christopher Fred; Aimi, Marco Francesco; Kishore, Kuna Venkat Satya Rama; Claydon, Glenn Scott; Boomhower, Oliver Charles; Thakre, Parag, MEMS microswitch having a conductive mechanical stop.
Herbert, Patrick C.; Annis, Jeffrey R.; Yao, Jun J.; Morris, Winfred L.; Larsson, Henric; Harris, Richard D.; Kretschmann, Robert J., Microelectromechanical system (MEMS) with improved beam suspension.
Knipe Richard L. (McKinney TX) Tregilgas John H. (Richardson TX) Orent Thomas W. (Garland TX) Yoshihara Hidekazu (Plano TX), Micromechanical device having an improved beam.
Johnson A. David (San Leandro CA) Block Barry (Los Altos CA) Mauger Philip (Santa Clara CA), Shape memory alloy microactuator having an electrostatic force and heating means.
Xu,Baomin; Fork,David Kirtland; Young,Michael Yu Tak; Chow,Eugene Michael, Stressed material and shape memory material MEMS devices and methods for manufacturing.
Hsu, Tsung-Yuan; Loo, Robert; Schmitz, Adele, Torsion spring for electro-mechanical switches and a cantilever-type RF micro-electromechanical switch incorporating the torsion spring.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.