IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
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| 국제특허분류(IPC7판) |
|
| 출원번호 |
US-0370072
(2012-02-09)
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| 등록번호 |
US-8784936
(2014-07-22)
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발명자
/ 주소 |
- Xu, Chongying
- Chen, Tianniu
- Cameron, Thomas M.
- Roeder, Jeffrey F.
- Baum, Thomas H.
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| 출원인 / 주소 |
- Advanced Technology Materials, Inc.
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| 대리인 / 주소 |
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| 인용정보 |
피인용 횟수 :
0 인용 특허 :
41 |
초록
▼
Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the form
Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.
대표청구항
▼
1. A method of depositing a thin film of strontium on a substrate, said method comprising contacting the substrate with a vapor of a precursor composition, wherein the precursor composition comprises the compound bis(tetramethyl-n-propylcyclopentadienyl)strontium and wherein the compound is not coor
1. A method of depositing a thin film of strontium on a substrate, said method comprising contacting the substrate with a vapor of a precursor composition, wherein the precursor composition comprises the compound bis(tetramethyl-n-propylcyclopentadienyl)strontium and wherein the compound is not coordinated with tetrahydrofuran, and further comprising concurrent or sequential deposition of titanium from a titanium source reagent to produce a titanate film. 2. The method according to claim 1, wherein the compound is uncoordinated with any complexation agents. 3. The method according to claim 1, comprising chemical vapor deposition or atomic layer deposition. 4. The method according to claim 1, wherein the titanate film is strontium titanate. 5. The method according to claim 1, further comprising a solvent medium. 6. The method according to claim 5, wherein the solvent medium comprises a solvent species selected from the group consisting of C3-C12 alkanes, C2-C12 ethers, C6-C12 aromatics, C7-C16 arylalkanes, C10-C25 arylcyloalkanes, and further alkyl-substituted forms of aromatic, arylalkane and arylcyloalkane species, wherein the further alkyl substituents in the case of multiple alkyl substituents may be the same as or different from one another and wherein each is independently selected from C1-C8 alkyl. 7. The method according to claim 6, wherein the solvent medium is tetrahydrofuran, xylene, 1,4-tertbutyltoluene, 1,3-diisopropylbenzene, tetrahydronaphthalene, dihydrodimethylnaphthalene, octane or decane. 8. The method according to claim 1, comprising chemical vapor deposition. 9. The method according to claim 1, comprising atomic layer deposition. 10. The method according to claim 1, comprising concurrent deposition of titanium from a titanium source reagent to produce a titanate film. 11. The method according to claim 1, comprising sequential deposition of titanium from a titanium source reagent to produce a titanate film.
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