Gallium-nitride-on-handle substrate materials and devices and method of manufacture
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/06
H01L-031/0304
H01L-031/0352
H01L-031/036
출원번호
US-0012674
(2011-01-24)
등록번호
US-8786053
(2014-07-22)
발명자
/ 주소
D'Evelyn, Mark P.
Chakraborty, Arpan
Houck, William
출원인 / 주소
Soraa, Inc.
대리인 / 주소
Kilpatrick Townsend & Stockton LLP
인용정보
피인용 횟수 :
9인용 특허 :
130
초록▼
A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickne
A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.
대표청구항▼
1. A gallium and nitrogen containing device comprising: a handle substrate member comprising a first surface region and a second surface region, wherein the second surface region is opposite the first surface region;an adhesion layer overlying the second surface region;a gallium and nitrogen contain
1. A gallium and nitrogen containing device comprising: a handle substrate member comprising a first surface region and a second surface region, wherein the second surface region is opposite the first surface region;an adhesion layer overlying the second surface region;a gallium and nitrogen containing material overlying the adhesion layer, wherein the gallium and nitrogen containing material comprises at least one a core region extending through a thickness of the gallium and nitrogen containing material;an interface region overlying the gallium and nitrogen containing material;at least one n-type epitaxial growth region overlying the interface region;at least one core structure extending from the at least one core region and through a thickness of the at least one n-type epitaxial growth region;an active region overlying the at least one n-type epitaxial growth region;a p-type region overlying the active region; andat least one p-contact region overlying the p-type region. 2. The device of claim 1, wherein the interface region is characterized by a defect density of less than about 106-107 cm−2 within a matrix of low-dislocation density regions adjacent to at least one core structure. 3. The device of claim 1, wherein the gallium and nitrogen containing material comprises a dot core gallium and nitrogen containing substrate. 4. The device of claim 1 wherein the second surface region comprises a patterned, textured, or roughened surface structure. 5. The device of claim 1, further comprising: at least one mesa structure, wherein the mesa structure comprises the active region, the p-type region, and the at least one p-contact region;an exposed n-type epitaxial growth region adjacent the at least one mesa structure; andat least one n-contact region overlying the exposed n-type epitaxial growth region. 6. The device of claim 1, wherein the gallium and nitrogen containing material comprises a dot core gallium and nitrogen containing substrate. 7. The device of claim 1, wherein the first surface region comprises a patterned, textured, or roughened surface structure. 8. The device of claim 1, wherein the handle substrate comprises a material selected from sapphire, aluminum oxide, mullite, silicon, silicon nitride, germanium, gallium arsenide, silicon carbide, MgAl2O4 spinel, zinc oxide, indium tin oxide (ITO), indium oxide, tin oxide, indium phosphide, beryllium oxide, chemical-vapor-deposition (CVD) diamond, single crystal diamond, YAG: Ce, gallium nitride, indium nitride, gallium aluminum indium nitride, aluminum oxynitride, aluminum nitride, and a combination of any of the foregoing. 9. The device of claim 1, further comprising a street between one or more adjacent p-contact regions, wherein the street provides an electrical insulation barrier between a p-contact region and at least one core region. 10. The device of claim 9, wherein the at least one core region comprises a square array of core regions; and the one or more p-contact regions are approximately square. 11. The device of claim 9, wherein the at least one core region comprises a hexagonal array; and the one or more adjacent p-contact regions are approximately triangular. 12. The device of claim 1, wherein the handle substrate member is electrically conducting; andfurther comprising at least one n-contact region overlying the first surface region. 13. The device of claim 12, wherein the interface region comprises a defect density of less than about 106 cm−2 to 107 cm−2 within the matrix region between cores. 14. The device of claim 12, wherein the second surface region comprises a patterned, textured, or roughened surface structure. 15. The device of claim 12, further comprising a street between one or more adjacent p-contact regions, wherein the street provides an electrical insulation barrier between a p-contact region and at least one core region. 16. The device of claim 1, wherein the handle substrate member is electrically insulating; andfurther comprising: at least one mesa structure, wherein the at least one mesa structure comprises the active region, the p-type region, and the at least one p-contact region;an exposed n-type epitaxial growth region adjacent the at least one mesa structure; andan n-contact region overlying the exposed n-type epitaxial growth region. 17. The device of claim 16, wherein the interface region comprises a defect density of less than about 106 cm−2 to 107 cm−2 within the matrix region between cores. 18. The device of claim 16, wherein the second surface region comprises a patterned, textured, or roughened surface structure. 19. The device of claim 16, further comprising a street between one or more adjacent p-contact regions, wherein the street provides an electrical insulation barrier between a p-contact region and at least one core region. 20. The device of claim 1, wherein the handle substrate member is electrically conducting; andfurther comprising: at least one n-contact region overlying the first surface region; anda second handle substrate member overlying the p-type active region, wherein, the second handle substrate member is transparent or reflective, the second handle substrate member is electrically conductive; andthe at least one p-contact region overlies the second handle substrate. 21. The device of claim 20, wherein the second handle substrate member comprises a material selected from indium tin oxide, ZnO, SnO, and silver-coated silicon. 22. The device of claim 20, wherein the interface region comprises a defect density of less than about 106 cm−2 to 107 cm−2 within the matrix region between cores. 23. The device of claim 20, wherein the second surface region comprises a patterned, textured, or roughened surface structure. 24. The device of claim 20, further comprising a street between one or more adjacent p-contact regions, wherein the street provides an electrical insulation barrier between a p-contact region and at least one core region.
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