IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0254431
(2009-03-04)
|
등록번호 |
US-8791435
(2014-07-29)
|
국제출원번호 |
PCT/RU2009/000105
(2009-03-04)
|
§371/§102 date |
20110901
(20110901)
|
국제공개번호 |
WO2010/101489
(2010-09-10)
|
발명자
/ 주소 |
- Balakin, Vladimir Egorovich
|
출원인 / 주소 |
- Balakin, Vladimir Egorovich
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
9 인용 특허 :
246 |
초록
▼
The invention relates generally to treatment of solid cancers. More particularly, the invention relates to a multi-field charged particle cancer therapy method and apparatus coordinated with negative ion beam creation, ion beam focusing, charged particle acceleration, patient rotation, and/or patien
The invention relates generally to treatment of solid cancers. More particularly, the invention relates to a multi-field charged particle cancer therapy method and apparatus coordinated with negative ion beam creation, ion beam focusing, charged particle acceleration, patient rotation, and/or patient respiration. Preferably, the charged particle therapy is performed on a patient in a partially immobilized and repositionable position. Proton delivery is preferably timed to patient respiration via control of charged particle beam injection, acceleration, and/or targeting methods and apparatus.
대표청구항
▼
1. An apparatus for generating a negative ion beam for use with charged particle radiation therapy, comprising: a negative ion source comprising: a magnetic material; anda high temperature plasma chamber substantially encompassing said magnetic material;wherein said high temperature plasma chamber c
1. An apparatus for generating a negative ion beam for use with charged particle radiation therapy, comprising: a negative ion source comprising: a magnetic material; anda high temperature plasma chamber substantially encompassing said magnetic material;wherein said high temperature plasma chamber comprises: a first ion generation electrode at a first end of said high temperature plasma chamber, a second ion generation electrode at a second end of said high temperature plasma chamber, and a magnetic field carrying outer wall;wherein application of a first high voltage pulse across said first ion generation electrode and said second ion generation electrode breaks hydrogen in said high temperature plasma chamber into component parts;wherein said magnetic material yields a magnetic field loop running through said first ion generation electrode, through said magnetic field carrying outer wall, through said second ion generation electrode, across a gap, and through said magnetic material;wherein said magnetic field loop yields a magnetic barrier across said gap between said high temperature plasma chamber and a low temperature plasma region, said magnetic barrier passing a subset of said component parts;wherein low energy electrons interact with atomic hydrogen to create hydrogen anions in said low temperature plasma region;wherein application of a second high voltage pulse across said second ion generation electrode and a third ion generation electrode extracts negative ions from said negative ion source into a negative ion beam. 2. The apparatus of claim 1, wherein said first high voltage pulse comprises a pulse of at least four kilovolts for a period of at least fifteen microseconds. 3. The apparatus of claim 2, wherein said second high voltage pulse comprises a pulse of at least twenty kilovolts during a period overlapping the last five microseconds of said first high voltage pulse. 4. The apparatus of claim 2, wherein said second high voltage pulse comprises a pulse of at least twenty kilovolts during a period overlapping at least three microseconds of said first high voltage pulse. 5. The apparatus of claim 1, further comprising a negative ion beam focusing system, comprising: a first focusing electrode circumferentially surrounding the negative ion beam;a second focusing electrode comprising conductive paths at least partially blocking the negative ion beam;wherein electric field lines run between said first focusing electrode and said second focusing electrode,wherein the negative ions in the negative ion beam encounter force vectors running up said first electric field lines that focus the negative ion beam. 6. The apparatus of claim 5, wherein said first focusing electrode comprises a negative charge, wherein said second focusing electrode comprises a positive charge. 7. The apparatus of claim 6, wherein said conductive paths comprise any of: a series of conductive lines running substantially in parallel across the negative ion beam;a conductive grid crossing the negative ion beam; anda foil crossing the negative ion beam, said foil having holes with combined areas of at least ninety percent of the cross-sectional area of the negative ion beam. 8. The apparatus of claim 7, wherein said conductive paths block less than ten percent of the cross-sectional area of the negative ion beam. 9. The apparatus of claim 1, further comprising: a synchrotron, comprising: four turning sections, wherein each of said turning sections turns said charged particle beam about ninety degrees;wherein the negative ion beam is converted into a proton beam;wherein the proton beam is injected into said synchrotron;wherein said synchrotron comprises no quadrupole magnet about a circulating path of said charged particle beam in said synchrotron. 10. A method for generating a negative ion beam for use with charged particle radiation therapy, comprising the steps of: providing a magnetic material;providing a high temperature plasma chamber substantially encompassing said magnetic material, wherein said high temperature plasma chamber comprises: a first ion generation electrode at a first end of said high temperature plasma chamber, a second ion generation electrode at a second end of said high temperature plasma chamber, and a magnetic field carrying outer wall circumferentially surrounding said high temperature plasma chamber;applying a first high voltage pulse across said first ion generation electrode and said second ion generation electrode breaking hydrogen in said high temperature plasma chamber into component parts;wherein said magnetic material yields a magnetic field loop running through said first ion generation electrode, through said magnetic field carrying outer wall, through said second ion generation electrode, across a gap, and through said magnetic material;wherein said magnetic field loop yields a magnetic barrier across said gap between said high temperature plasma chamber and a low temperature plasma region, said magnetic barrier passing a subset of said component parts;wherein low energy electrons interact with atomic hydrogen to create hydrogen anions in said low temperature plasma region; andapplying a second high voltage pulse across said second ion generation electrode and a third ion generation electrode, wherein said second high voltage pulse extracts negative ions from said negative ion source into a negative ion beam. 11. The method of claim 10, wherein said first high voltage pulse comprises a pulse of at least four kilovolts for a period of at least fifteen microseconds. 12. The method of claim 10, wherein said second high voltage pulse comprises a pulse of at least twenty kilovolts during a period overlapping the last five microseconds of said first high voltage pulse. 13. The method of claim 10, wherein said second high voltage pulse comprises a pulse of at least twenty kilovolts during a period overlapping at least three microseconds of said first high voltage pulse. 14. The method of claim 10, further comprising the steps of: providing a first focusing electrode circumferentially surrounding the negative ion beam;providing a second focusing electrode, said second focusing electrode comprising conductive paths at least partially blocking the negative ion beam;applying an electric field across said first focusing electrode and said second focusing electrode, wherein electric field lines run between said first focusing electrode and said second focusing electrode,wherein the negative ion beam encounters force vectors running up the electric field lines that focus the negative ion beam. 15. The method of claim 14, wherein said first focusing electrode comprises a negative charge, wherein said second focusing electrode comprises a positive charge. 16. The method of claim 15, wherein said conductive paths comprise any of: a series of conductive lines running substantially in parallel across the negative ion beam;a conductive grid crossing the negative ion beam; anda foil crossing the negative ion beam, said foil having holes with combined areas of at least ninety percent of the cross-sectional area of the negative ion beam. 17. The method of claim 16, wherein said conductive paths block less than ten percent of the cross-sectional area of the negative ion beam. 18. The method of claim 17, further comprising the steps of: providing a synchrotron;converting the negative ion beam into a proton beam at a foil; andinjecting the proton beam into said synchrotron; wherein said synchrotron comprises four turning sections, wherein each of said turning sections turns the charged particle beam about ninety degrees;wherein said synchrotron comprises no quadrupole magnet about a circulating path of the charged particle beam in said synchrotron.
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