IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
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출원번호 |
US-0339609
(2011-12-29)
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등록번호 |
US-8802201
(2014-08-12)
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발명자
/ 주소 |
- Raisanen, Petri
- Sung-hoon, Jung
- Mohith, Verghese
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
79 인용 특허 :
55 |
초록
The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).
대표청구항
▼
1. A method for depositing stacked layers on a substrate within a reaction chamber, the method comprising applying an atomic layer deposition cycle to the substrate, the cycle comprising: exposing the substrate to a precursor gas for a precursor pulse interval then removing the precursor gas;forming
1. A method for depositing stacked layers on a substrate within a reaction chamber, the method comprising applying an atomic layer deposition cycle to the substrate, the cycle comprising: exposing the substrate to a precursor gas for a precursor pulse interval then removing the precursor gas;forming active NxOy species;introducing the active NxOy species to a reaction chamber;exposing the substrate to an oxidizer gas comprising an oxidant gas and the active NxOy species for an oxidation pulse interval; andprior to introducing the active NxOy species to the reaction chamber, monitoring the active NxOy species and adjusting one or more process parameters based on the monitoring. 2. The method according to claim 1, wherein said exposing the substrate to the oxidizer gas occurs prior to said exposing the substrate to the precursor gas. 3. The method according to claim 2, wherein said oxidant gas comprises ozone generated from a mixture of O2 and N2 having a N2/O2 ratio of less than one percent for a sufficient time to deposit an oxide layer on the substrate. 4. The method according to claim 2, further comprising exposing the substrate to a second oxidizer gas comprising an oxidant gas for an oxidation pulse interval then removing the second oxidizer gas. 5. The method according to claim 4, wherein the second oxidizer gas further comprises a nitrogen containing species gas. 6. The method according to claim 4, wherein the oxidant gas of the second oxidizer gas comprises a nitrogen containing species gas. 7. The method according to claim 4, wherein the oxidant gas of the second oxidizer gas comprises approximately 5 to 25 atomic percent ozone. 8. The method according to claim 7, wherein said ozone is produced form a mixture of an oxygen and a nitrogen source gas subjected to a plasma discharge. 9. The method according to claim 8, wherein the flow ratio of said nitrogen source gas to said oxygen source gas is greater than 0.001. 10. The method according to claim 8, wherein the flow ratio of said nitrogen source gas to said oxygen source gas is at least 0.072. 11. The method according to claim 1, wherein the temperature of the chamber during exposure of the substrate to the oxidizer gas is approximately 130° C. to 300° C. 12. The method according to claim 1, wherein said exposing the substrate to the oxidizer gas occurs after said exposing the substrate to the precursor gas. 13. A method of manufacturing a semiconductor comprising: disposing a dielectric layer upon a substrate;forming an inter oxide layer between said dielectric layer and substrate by exposing said substrate to a combination of a gas comprising ozone generated from a mixture of O2 and N2 having a N2/O2 ratio of less than one percent and an excited nitrogen-containing species gas, said combination introduced to a reaction chamber; andprior to introducing the combination to the reaction chamber, monitoring active NxOy species and adjusting one or more process parameters based on the monitoring. 14. The method according to claim 13, wherein the excited nitrogen-containing species gas comprises an excited NxOy radical species, an excited NxOy ionic species and combinations thereof. 15. The method according to claim 13, wherein the excited nitrogen-containing species gas comprises activated or radical species selected from the group consisting of NO, N2O, NO2, NO3, N2O5 and combinations thereof. 16. The method according to claim 13, wherein the gas said substrate is exposed to form said inter oxide layer comprises approximately 5 to 25 atomic percent ozone. 17. The method according to claim 13, wherein the step of disposing a dielectric layer upon a substrate comprises exposing the substrate to a precursor gas, the precursor gas comprising a rare earth metal selected from the group consisting of Sc, La, Ce, Pr, Nd, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, and combinations thereof. 18. The method according to claim 13, wherein the step of disposing a dielectric layer upon a substrate comprises exposing the substrate to a precursor gas, the precursor gas comprising at least one of an organo-metallic and a metal halide compound. 19. The method according to claim 13, wherein the step of disposing a dielectric layer upon a substrate comprises exposing the substrate to a precursor gas, the precursor gas comprising at least one of: hafnium tetrachloride (HfCl4);titanium tetrachloride (TiCl4);tantalum pentachloride (TaCl5);tantalum pentafluoride (TaF5);zirkonium tetrachloride (ZrCl4);rare earth betadiketonate compounds including (La(THD)3) and (Y(THD)3);rare earth cyclopentadienyl (Cp) compounds including La(iPrCp)3;rare earth amidinate compounds including lanthanum tris-formamidinate La(FAMD)3;cyclooctadienyl compounds including rare earth metals;alkylamido compounds including: tetrakis-ethyl-methylamino hafnium (TEMAHf);tetrakis (diethylamino) hafnium ((Et2N)4Hf or TDEAH); andtetrakis (dimethylamino) hafnium ((Me2N)4Hf or TDMAH);alkoxides;halide compounds of silicon;silicon tetrachloride;silicon tetrafluoride; andsilicon tetraiodide.
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