초록 ▼

A photoelectric conversion device with a novel anti-reflection structure. In the photoelectric conversion device, a front surface of a semiconductor substrate which serves as a light-receiving surface is covered with a group of whiskers (a group of nanowires) so that surface reflection is reduced. I

A photoelectric conversion device with a novel anti-reflection structure. In the photoelectric conversion device, a front surface of a semiconductor substrate which serves as a light-receiving surface is covered with a group of whiskers (a group of nanowires) so that surface reflection is reduced. In other words, a semiconductor layer which has a front surface where crystals grow so that whiskers are formed is provided on the light-receiving surface side of the semiconductor substrate. The semiconductor layer has a given uneven structure, and thus has effects of reducing reflection on the front surface of the semiconductor substrate and increasing conversion efficiency.

대표청구항 ▼

1. A photoelectric conversion device comprising: a semiconductor substrate having a front surface and a back surface, wherein the back surface of the semiconductor substrate is provided with an n-type impurity region and a p-type impurity region;a metal layer over the front surface;a plurality of wh

1. A photoelectric conversion device comprising: a semiconductor substrate having a front surface and a back surface, wherein the back surface of the semiconductor substrate is provided with an n-type impurity region and a p-type impurity region;a metal layer over the front surface;a plurality of whiskers over the metal layer, wherein the plurality of whiskers comprises a crystalline semiconductor;a first electrode on the n-type impurity region;a second electrode on the p-type impurity region, wherein each of the plurality of the whiskers comprises a protrusion with a diameter of greater than or equal to 500 nm and less than or equal to 3 μm, and a length of greater than or equal to 1 μm and less than or equal to 100 μm, andwherein a reflectance of the plurality of the whiskers is less than or equal to 5%. 2. A photoelectric conversion device according to claim 1, further comprising: an insulating film formed over the plurality of whiskers. 3. A photoelectric conversion device according to claim 1, wherein the n-type impurity region contains an n-type impurity element added by a doping method, andwherein the p-type impurity region contains a p-type impurity element added by a doping method. 4. A photoelectric conversion device according to claim 1, wherein the p-type impurity region comprises a first p-type impurity region and a second p-type impurity region, andwherein a first impurity concentration of the first p-type impurity region is different from a second impurity concentration of the second p-type impurity region. 5. A photoelectric conversion device comprising: a semiconductor substrate having a front surface and a back surface, wherein the back surface of the semiconductor substrate is provided with an n-type impurity region and a p-type impurity region;a metal layer over the front surface;a plurality of whiskers over the metal layer, wherein the plurality of whiskers comprises a crystalline semiconductor;an insulating film on the n-type impurity region and the p-type impurity region;a first electrode on the insulating film; anda second electrode on the insulating film,wherein the first electrode is electrically connected to the n-type impurity region through a contact hole in the insulating film, wherein the second electrode is electrically connected to the p-type impurity region through a contact hole in the insulating film,wherein each of the plurality of the whiskers comprises a protrusion with a diameter of greater than or equal to 500 nm and less than or equal to 3 μm, and a length of greater than or equal to 1 μm and less than or equal to 100 μm, andwherein a reflectance of the plurality of the whiskers is less than or equal to 5%. 6. A photoelectric conversion device according to claim 5, further comprising: an insulating film formed over the plurality of whiskers. 7. A photoelectric conversion device according to claim 5, wherein the n-type impurity region contains an n-type impurity element added by a doping method, andwherein the p-type impurity region contains a p-type impurity element added by a doping method. 8. A photoelectric conversion device according to claim 5, wherein the p-type impurity region comprises a first p-type impurity region and a second p-type impurity region, andwherein a first impurity concentration of the first p-type impurity region is different from a second impurity concentration of the second p-type impurity region. 9. The photoelectric conversion device according to claim 1, wherein the metal layer is any one selected in a group of platinum, aluminum, copper, titanium, and an aluminum. 10. The photoelectric conversion device according to claim 5, wherein the metal layer is any one selected in a group of platinum, aluminum, copper, titanium, and an aluminum.