TiNxCy modified surface for an implantable device and a method of producing the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
A61F-002/06
A61F-002/82
출원번호
US-0752254
(2013-01-28)
등록번호
US-8834555
(2014-09-16)
발명자
/ 주소
Malik, Shamim M.
Mukherjee, Avijit
출원인 / 주소
Abbott Cardiovascular Systems Inc.
대리인 / 주소
Squire Patton Boggs (US) LLP
인용정보
피인용 횟수 :
0인용 특허 :
48
초록
Implantable devices, such as stents, having a surface modified with TiNxCy are disclosed.
대표청구항▼
1. An implantable medical device comprising a TiNxCy compound implanted at a depth within at least a region of a surface of the device. 2. The device of claim 1, wherein x is 1 and y is 1 or 2. 3. The device of claim 1, wherein the depth of the implanted TiNxCy compound is not greater than about 200
1. An implantable medical device comprising a TiNxCy compound implanted at a depth within at least a region of a surface of the device. 2. The device of claim 1, wherein x is 1 and y is 1 or 2. 3. The device of claim 1, wherein the depth of the implanted TiNxCy compound is not greater than about 2000 Å from the surface of the device. 4. The device of claim 1, additionally comprising a layer of a second TiNxCy compound formed over at least a portion of the region of the surface of the device implanted with the TiNxCy compound; wherein the second TiNxCy compound may be the same as or different from the TiNxCy compound which is implanted into the surface of the device. 5. The device of claim 4, wherein x is 1 and y is 1 or 2 for the second TiNxCy compound and the implanted TiNxCy compound. 6. The device of claim 1, wherein the device is a stent. 7. The stent of claim 6, wherein the stent is made from stainless steel. 8. An implantable medical device comprising a TiNxCy compound deposited on at least a region of a surface of the device; and at least a portion of the region with the TiNxCy compound deposited on the surface comprising: N implanted at a depth within the surface of the device;Ti implanted at a depth within the surface of the device;TiN implanted at a depth within the surface of the device;TiN implanted at a depth within the surface of the device, and at least a portion of the portion implanted with TiN also comprises N or Ti implanted at a depth within the surface of the device, wherein at least a portion of the implanted N or implanted Ti is beneath the implanted TiN;a second TiNxCy compound implanted at a depth within the surface of the device, the second TiNxCy compound being the same as or different from the TiNxCy compound which is deposited on the surface of the device, and at least a portion of the portion comprising the implanted second TiNxCy compound also comprises TiN implanted at a depth within the surface of the device, wherein at least a portion of the implanted TiN is beneath the implanted second TiNxCy compound;a second TiNxCy compound implanted at a depth within the surface of the device, the second TiNxCy compound being the same as or different from the TiNxCy compound which is deposited on the surface of the device, and at least a portion of the portion comprising the implanted TiNxCy compound also comprises N or Ti implanted at a depth within the surface of the device, wherein at least a portion of the implanted N or implanted Ti is beneath the implanted TiNxCy compound;ora second TiNxCy compound implanted at a depth within the surface of the device, the second TiNxCy compound being the same as or different from the TiNxCy compound which is deposited on the surface of the device, and at least a portion of the portion comprising the implanted TiNxCy compound also comprises TiN implanted at a depth within the surface of the device, wherein at least a portion of the implanted TiN is beneath the implanted TiNxCy compound; and further at least a portion of the portion comprising implanted TiN which is beneath the implanted TiNxCy compound also comprises Ti or N implanted at a depth within the surface of the device, wherein at least a portion of the implanted Ti or implanted N is beneath the implanted TiN beneath the implanted TiNxCy compound. 9. The device of claim 8, wherein x is 1 and y is 1 or 2. 10. The device of claim 8, wherein the TiNxCy is exposed on the surface of the device. 11. The device of claim 8, wherein at least a portion of the region with the TiNxCy compound deposited on the surface comprises Ti implanted at a depth within the surface of the device. 12. The device of claim 8, wherein at least a portion of the region with the TiNxCy compound deposited on the surface comprises TiN implanted at a depth within the surface of the device; or at least a portion of the region with the TiNxCy compound deposited on the surface comprises TiN implanted at a depth within the surface of the device, and at least a portion of the portion implanted with TiN also comprises N or Ti implanted at a depth within the surface of the device, wherein at least a portion of the implanted N or implanted Ti is beneath the implanted TiN. 13. The device of claim 8, wherein at least a portion of the region with the TiNxCy compound deposited on the surface comprises a second TiNxCy compound implanted at a depth within the surface of the device, and at least a portion of the portion comprising the implanted second TiNxCy compound also comprises TiN implanted at a depth within the surface of the device, wherein at least a portion of the implanted TiN is beneath the implanted second TiNxCy compound; wherein the second TiNxCy compound may be the same as or different from the TiNxCy compound which is deposited on the surface of the device. 14. The device of claim 13, wherein the depth of the implanted second TiNxCy compound is not greater than about 2000 Å from the surface of the device. 15. The device of claim 8, wherein at least a portion of the region with the TiNxCy compound deposited on the surface comprises a second TiNxCy compound implanted at a depth within the surface of the device, the second TiNxCy compound being the same as or different from the TiNxCy compound which is deposited on the surface of the device, and at least a portion of the portion comprising the implanted TiNxCy compound also comprises TiN implanted at a depth within the surface of the device, wherein at least a portion of the implanted TiN is beneath the implanted TiNxCy compound; and further at least a portion of the portion comprising implanted TiN which is beneath the implanted TiNxCy compound also comprises Ti or N implanted at a depth within the surface of the device, wherein at least a portion of the implanted Ti or implanted N is beneath the implanted TiN beneath the implanted TiNxCy compound. 16. The device of claim 15, wherein the depth of the implanted TiN compound is not greater than about 2000 Å from the surface of the device. 17. The device of claim 8, wherein the device is a stent. 18. The stent of claim 17, wherein the stent is made from stainless steel. 19. The device of claim 8, wherein at least a portion of the region with the TiNxCy compound deposited on the surface comprises: Ti implanted at a depth within the surface of the device;TiN implanted at a depth within the surface of the device;TiN implanted at a depth within the surface of the device, and at least a portion of the portion implanted with TiN also comprises N or Ti implanted at a depth within the surface of the device, wherein at least a portion of the implanted N or implanted Ti is beneath the implanted TiN;a second TiNxCy compound implanted at a depth within the surface of the device, the second TiNxCy compound being the same as or different from the TiNxCy compound which is deposited on the surface of the device, and at least a portion of the portion comprising the implanted second TiNxCy compound also comprises TiN implanted at a depth within the surface of the device, wherein at least a portion of the implanted TiN is beneath the implanted second TiNxCy compound;a second TiNxCy compound implanted at a depth within the surface of the device, the second TiNxCy compound being the same as or different from the TiNxCy compound which is deposited on the surface of the device, and at least a portion of the portion comprising the implanted TiNxCy compound also comprises N or Ti implanted at a depth within the surface of the device, wherein at least a portion of the implanted N or implanted Ti is beneath the implanted TiNxCy compound;ora second TiNxCy compound implanted at a depth within the surface of the device, the second TiNxCy compound being the same as or different from the TiNxCy compound which is deposited on the surface of the device, and at least a portion of the portion comprising the implanted TiNxCy compound also comprises TiN implanted at a depth within the surface of the device, wherein at least a portion of the implanted TiN is beneath the implanted TiNxCy compound; and further comprises a portion of the portion comprising implanted TiN which is beneath the implanted TiNxCy compound also comprises Ti or N implanted at a depth within the surface of the device, wherein at least a portion of the implanted Ti or implanted N is beneath the implanted TiN beneath the implanted TiNxCy compound. 20. A stent comprising a layer of TiNxCy exposed on a surface of the stent, the stent having a surface material different than TiNxCy and a compound comprising Ti, or TiN disposed beneath the layer of TiNxCy such that the compound is blended with the surface material of the stent. 21. The stent of claim 20, wherein a region of the layer of TiNxCy is implanted at a depth within the surface of the stent.
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