[특허]Simple chemical vapor deposition systems for depositing multiple-metal aluminide coatings

Simple chemical vapor deposition systems for depositing multiple-metal aluminide coatings 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-016/448 C23C-016/02 C23C-016/08 C23C-028/00
출원번호	US-0142539 (2008-06-19)
등록번호	US-8839740 (2014-09-23)
발명자 / 주소	Fairbourn, David C.
출원인 / 주소	MT Coatings, LLC
대리인 / 주소	Wood, Herron & Evans LLP
인용정보	피인용 횟수 : 0 인용 특허 : 115

초록 ▼

A chemical vapor deposition (CVD) system and method for applying an aluminide coating constituted by two or more extrinsic metal components on a jet engine component. The aluminide coating is capable of forming a protective complex oxide upon subsequent heating in an oxidizing environment. At least one of the extrinsic metals in the aluminide coating is provided as a first vapor phase reactant from a receptacle coupled by a closed communication path with the reaction chamber of the CVD system and free of a carrier gas. The aluminide coating is formed by the chemical combination of the first vapor phase reactant with a second vapor phase reactant either created in situ in the reaction chamber or supplied by a carrier gas to the reaction chamber from a precursor source.

대표청구항 ▼

1. A chemical vapor deposition system for forming a coating on a jet engine component by use of first and second donor materials, the chemical vapor deposition system comprising: a main reaction chamber including an interior space configured to hold said jet engine component and the first donor material;a first heater configured to heat the main reaction chamber, the first donor material, and said jet engine component to create a deposition environment in the interior space that contains a first vapor phase reactant from the first donor material;a first receptacle external of the main reaction chamber and adapted to hold the second donor material, the first receptacle communicating with the deposition environment of the main reaction chamber via a communication path so as to share the deposition environment of the main reaction chamber and to permit transport of the second vapor phase reactant from the first receptacle to the main reaction chamber, the first receptacle being free of fluid communication with a source of carrier gas, being free of fluid communication with a source of corrosive gas, and being sealed but for the communication path that is otherwise closed; anda second heater different from the first heater and configured to heat the first receptacle to a temperature different from the temperature of the main reaction chamber,wherein the first vapor phase reactant and the second vapor phase reactant, at least one of which contains a first extrinsic metal, cooperate to form the coating containing the first extrinsic metal on the jet engine component. 2. The chemical vapor deposition system of claim 1 further comprising: first and second containers positioned in the main reaction chamber and respectively adapted to hold an activator material and the first donor material, the heating of the main reaction chamber vaporizing the activator material to promote a chemical reaction with the first donor material that provides the first vapor phase reactant. 3. The chemical vapor deposition system of claim 1 wherein the first receptacle has a single receptacle port coupled in closed fluid communication with the main reaction chamber. 4. The chemical vapor deposition system of claim 1 wherein the second heater is further positioned to heat the conduit. 5. The chemical vapor deposition system of claim 1 further comprising: a second receptacle external of the main reaction chamber and adapted to hold a third donor material including a third extrinsic metal, the second receptacle sealed but for a second closed communication path that is configured to transport a third vapor phase reactant containing the third extrinsic metal from the third donor material to the main reaction chamber. 6. The chemical vapor deposition system of claim 1 further comprising: a second receptacle external of the main reaction chamber and adapted to hold a third donor material including a third extrinsic metal, the second receptacle sealed but being coupled with the first closed communication path to transport a third vapor phase reactant containing the third extrinsic metal from the third donor material to the main reaction chamber. 7. The chemical vapor deposition system of claim 1 wherein the main reaction chamber is dimensioned for receiving said jet engine component, and a first volume of the main reaction chamber is larger than a second volume of the first receptacle. 8. The chemical vapor deposition system of claim 7 wherein said first volume is at least ten times larger than said second volume. 9. The chemical vapor deposition system of claim 1 wherein the communication path is defined by a conduit having a first aperture coupled in fluid communication with the first receptacle and a second aperture coupled in fluid communication with the main reaction chamber. 10. The chemical vapor deposition system of claim 9 wherein the first receptacle has a single receptacle port coupled in closed fluid communication with the first aperture of the conduit. 11. The chemical vapor deposition system of claim 9 wherein the conduit is a pipe fluidly coupling the deposition environment of the main reaction chamber with the first receptacle. 12. The chemical vapor deposition system of claim 9 wherein the conduit is a tee fitting fluidly coupling the deposition environment of the main reaction chamber with the first receptacle. 13. The chemical vapor deposition system of claim 1 wherein the first vapor phase reactant contains the first extrinsic metal, the second vapor phase reactant contains a second extrinsic metal differing in composition from the first extrinsic metal, and the coating includes the first and second extrinsic metals. 14. A chemical vapor deposition system for forming an aluminide coating containing at least two different extrinsic metals on a jet engine component by use of first and second donor materials, comprising: a main reaction chamber including an interior space configured to hold said jet engine component, an activator material, and the first donor material, a vessel, and a lid removable from the vessel;a first heater positioned to heat the main reaction chamber to vaporize the activator material and to heat the jet engine component, the activator material reacting chemically with the first donor material to provide a first vapor phase reactant containing the first extrinsic metal;a receptacle external to the main reaction chamber, being mechanically supported by the lid, being free of fluid communication with a source of carrier gas, being free of fluid communication with a source of corrosive gas, and having a single receptacle port coupled in closed fluid communication path with the main reaction chamber, the receptacle adapted to hold a second donor material;a conduit having only two normally open apertures, one of the apertures being coupled to the receptacle port and the other of the apertures being coupled in fluid communication with the main reaction chamber; anda second heater positioned to heat the receptacle for providing a second vapor phase reactant through the conduit to the main reaction chamber, a first extrinsic metal from the first vapor phase reactant combining with a second extrinsic metal from the second vapor phase reactant to form the aluminide layer on said jet engine component. 15. The chemical vapor deposition system of claim 14 further comprising: an inlet port and a discharge port associated with the main reaction chamber, the inlet port configured to receive an inert gas and the discharge port configured for evacuating the main reaction chamber, whereby to cooperatively purge reactive gases from the main reaction chamber. 16. The chemical vapor deposition system of claim 14 wherein the conduit is a pipe fluidly coupling an interior environment of the receptacle with an interior deposition environment of the main reaction chamber. 17. The chemical vapor deposition system of claim 16 wherein at least one of said first heater and said second heater transfer heat to the pipe. 18. The chemical vapor deposition system of claim 16 wherein the pipe is a tee fitting. 19. The chemical vapor deposition system of claim 14 wherein the main reaction chamber is dimensioned for receiving said jet engine component, and a first volume of the main reaction chamber is larger than a second volume of the first receptacle. 20. The chemical vapor deposition system of claim 19 wherein said first volume is at least ten times larger than said second volume.

이 특허에 인용된 특허 (115)

Baldi Alfonso L. ; Clark Frank J., Activated nickel screens and foils.
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Warnes Bruce M. ; Near Daniel L. ; Punola David C. ; Basta William C., Active element modified platinum aluminide diffusion coating and CVD coating method.
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Hillman Joseph T. (Scottsdale AZ) Ramsey W. Chuck (Chandler AZ), Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber.
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Pfaendtner Jeffrey A. ; Rigney Joseph D. ; Das Nripendra N. ; Darolia Ramgopal, Apparatus and method for selectively coating internal and external surfaces of an airfoil.
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Haji Hiroshi,JPX, Apparatus and method for surface treatment, and apparatus and method for wire bonding using the surface treatment appara.
상세보기
Fairbourn, David C., Apparatus and methods for forming modified metal coatings.
상세보기
Shioya Yoshimi (Yokohama JPX) Maeda Mamoru (Tama JPX) Ohyama Yasushi (Kodaira JPX) Takagi Mikio (Kawasaki JPX), Apparatus for plasma chemical vapor deposition.
상세보기
Wilson Herbert L. (Woodbridge VA) Guiterrez William A. (Woodbridge VA), Apparatus for producing high quality epitaxially grown semiconductors.
상세보기
Matsuno Akira (Hiratsuka JPX) Nire Takashi (Hiratsuka JPX), Apparatus for producing thin film.
상세보기
Takagi Toshinori (Nagaokakyo JPX) Morimoto Kiyoshi (Mobara JPX) Watanabe Hiroshi (Mobara JPX), Apparatus for vapor depositing a stoichiometric compound.
상세보기
Nagaraj, Bangalore A.; Williams, Jeffrey L., CVD aluminiding process for producing a modified platinum aluminide bond coat for improved high temperature performance.
상세보기
Kaizuka Takeshi,JPX ; Horiuchi Takashi,JPX ; Mizukami Masami,JPX ; Mochizuki Takashi,JPX ; Kawano Yumiko,JPX ; Yamasaki Hideaki,JPX, CVD apparatus and CVD method.
상세보기
Basta William C. (Montague MI) Punola David C. (Muskegon MI) Near Daniel L. (Montague MI) Smith Jeffery S. (Muskegon MI), CVD apparatus and method.
상세보기
Basta William C. (Montague MI) Punola David C. (Muskegon MI) Near Daniel L. (Montague MI) Smith Jeffery S. (Muskegon MI), CVD apparatus comprising exhaust gas condensation means.
상세보기
Warnes, Bruce M.; Punola, David C.; Smith, Jeffery S.; Near, Daniel L., CVD codeposition of A1 and one or more reactive (gettering) elements to form protective aluminide coating.
상세보기
Punola David C. (Muskegon MI) Basta William C. (Montague MI) Smith Jeffrey S. (Muskegon MI), CVD method for forming uniform coatings.
상세보기
Merkulov,Vladimir I.; Lowndes,Douglas H.; Guillorn,Michael A.; Simpson,Michael L., Carbon containing tips with cylindrically symmetrical carbon containing expanded bases.
상세보기
Merkulov, Vladimir I.; Lowndes, Douglas H.; Guillorn, Michael A.; Simpson, Michael L., Carbon tips with expanded bases grown with simultaneous application of carbon source and etchant gases.
상세보기
Schroder Dieter K. (Pittsburgh PA) Wickstrom Robert A. (Pittsburgh PA), Charge storage target and method of manufacture.
상세보기
Warnes, Bruce M.; Purvis, Andrew L.; Near, Daniel L., Chemical vapor deposition apparatus and method.
상세보기
Tsai, Chao Chieh, Chip antenna with a shielding layer.
상세보기
Hunt Andrew T. (Atlanta GA) Cochran Joe K. (Marietta GA) Carter William Brent (Atlanta GA), Combustion chemical vapor deposition of films and coatings.
상세보기
Hunt Andrew Tye ; Hwang Tzyy-Jiuan ; Shao Hong, Combustion chemical vapor deposition of phosphate films and coatings.
상세보기
Veltri Richard D. (East Hartford CT) Galasso Francis S. (Manchester CT), Composite silicon carbide coatings for carbon-carbon materials.
상세보기
Veltri Richard D. (East Hartford CT) Galasso Francis S. (Manchester CT), Composite silicon carbide/silicon nitride coatings for carbon-carbon materials.
상세보기
Benander Robert E. (Sylmar CA) Holzl Robert A. (LaCanada CA), Deposition of titanium aluminides.
상세보기
Peichl Lothar (Dachau DEX) Walter Heinrich (Friedberg DEX), Device for coating hollow workpieces by gas diffusion.
상세보기
Thomas E. Strangman, Durable thermal barrier coating.
상세보기
Terada Kousuke (Tenri JPX) Mikami Akiyoshi (Yamatotakada JPX) Taniguchi Kouji (Nara JPX) Tanaka Koichi (Nara JPX) Yoshida Masaru (Nara JPX) Nakajima Shigeo (Nara JPX), Electroluminescent device.
상세보기
Miyazaki Yoshihiko (Numazu JPX) Goto Taizan (Numazu JPX) Komiyama Yoshizo (Gotenba JPX) Iwata Kotei (Gotenba JPX), Epitaxial growing apparatus.
상세보기
Spitsberg, Irene; Darolia, Ramgopal, Fabrication of an article having a protective coating with a polished, pre-oxidized protective-coating surface.
상세보기
Ueno Masuhide (Tokyo JPX), Field effect transistor.
상세보기
Lane Scott ; Shah Dinesh ; Colman Ronald,GB2 ; Heading Liam R.,GB6 ; Simpson Eric,GBX, Flow-stabilized wet scrubber system for treatment of process gases from semiconductor manufacturing operations.
상세보기
Gu Youfan ; Hauschultz Dana S., Fluid cooled trap.
상세보기
Lei Lawrence ; Trihn Son ; Huston Joel M., Fluid delivery system and method.
상세보기
Fairbourn, David C., Gas turbine engine components with aluminide coatings and method of forming such aluminide coatings on gas turbine engine components.
상세보기
DiMarcello ; Frank Vincent ; Williams ; John Charles, Graded index optical fiber.
상세보기
Ho Frank F. (Yorba Linda CA) Yeh Milton Y. (Santa Monica CA), High efficiency solar cell.
상세보기
Rairden ; III ; John R., High temperature oxidation resistant dispersion strengthened nickel-chromium alloys.
상세보기
Fairbourn, David C., Inoculants for intermetallic layer.
상세보기
Uchiyama Taroh,JPX ; Yoshikawa Yukio,JPX ; Tsukamoto Takashi,JPX ; Nishihama Jiro,JPX, Low pressure CVD system.
상세보기
Baldi Alfonso L. (Wynnewood PA), Metal diffusion and use.
상세보기
Rickerby David S,GBX, Metallic article having a thermal barrier coating and a method of application thereof.
상세보기
Pillhoefer Horst (Roehrmoos DEX) Thoma Martin (Munich DEX) Walter Heinrich (Friedberg DEX) Adam Peter (Dachau DEX), Method and apparatus for coating a structural component by gas diffusion.
상세보기
Pillhoefer Horst,DEX ; Thoma Martin,DEX, Method and apparatus for gas phase diffusion coating of workpieces made of heat resistant material.
상세보기
Vakil Himanshu B. (Schenectady NY), Method and apparatus for producing aluminide regions on superalloy substrates, and articles produced thereby.
상세보기
Sandhu Gurtej S. (Boise ID) Meikle Scott G. (Boise ID) Westmoreland Donald L. (Boise ID), Method and appartus for subliming precursors.
상세보기
Gevelber Michael A. ; Toledo-Quinones Manuel, Method for closed loop control of chemical vapor deposition process.
상세보기
Pillhoefer Horst (Roehrmoos DEX) Thoma Martin (Munich DEX) Walter Heinrich (Friedberg DEX) Adam Peter (Dachau DEX), Method for coating a structural component by gas diffusion.
상세보기
Anthony Thomas R. (Schenectady NY) Fleischer James F. (Scotia NY) Woodruff David W. (Clifton Park NY), Method for determining thickness of chemical vapor deposited layers.
상세보기
Fnthony Thomas R. (Schenectady NY) Fleischer James F. (Scotia NY) Woodruff David W. (Clifton Park NY), Method for determining thickness of chemical vapor deposited layers.
상세보기
Gopinath,Sanjay; Dalton,Jeremie; Blackburn,Jason M.; Drewery,John; van den Hoek,Willibrordus Gerardus Maria, Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds.
상세보기
Vaartstra, Brian A., Method for forming refractory metal oxide layers with tetramethyldisiloxane.
상세보기
Doo Ven Y. (San Jose CA) Tsang Paul J. (Poughkeepsie NY), Method for manufacturing field effect transistors.
상세보기
Grunke Richard (Munich DEX) Peichl Lothar (Dachau DEX) Walter Heinrich (Friedberg DEX), Method for producing a layer protective against oxidation.
상세보기
Vakil Himanshu Bachubhai, Method for producing spallation-resistant protective layer on high performance alloys.
상세보기
Hunt Andrew T. ; Cochran Joe K. ; Carter William Brent, Method for the combustion chemical vapor deposition of films and coatings.
상세보기
Hunt Andrew T. ; Cochran Joe K. ; Carter William Brent, Method for the combustion chemical vapor deposition of films and coatings.
상세보기
Lewis Everett C. (McDonald TN) Grant Harley A. (Harrison TN), Method of chromizing large size articles.
상세보기
Liburdi Joseph (Hamilton CAX) Lowden Paul (Cambridge CAX) Aguero Alina (Guelph CAX), Method of coating complex substrates.
상세보기
Kawata Kazuki (Tokyo JPX), Method of coating the surface of a substrate and a coating material.
상세보기
Jones Anthony Copland,GBX, Method of depositing thin metal films.
상세보기
Yamazaki, Shunpei; Takemura, Yasuhiko; Zhang, Hongyong, Method of fabricating a thin film transistor.
상세보기
Bhupendra K. Gupta ; Thomas E. Mantkowski ; Nripendra N. Das ; Raymond W. Heidorn, Method of forming a diffusion aluminide coating.
상세보기
Hawkins Hugh M. (Annandale VA), Method of joining pipe ends and joint formed thereby.
상세보기
Terada Kousuke (Tenri JPX) Mikami Akiyoshi (Yamatotakada JPX) Taniguchi Kouji (Shiki JPX) Tanaka Koichi (Nara JPX) Yoshida Masaru (Ikoma JPX) Nakajima Shigeo (Nara JPX), Method of manufacturing an electroluminescent device.
상세보기
Strangman Thomas E. (Phoenix AZ), Method of producing a superalloy article.
상세보기
Near Daniel L. ; Warnes Bruce M. ; Winters Stephen M., Method of reacting excess CVD gas reactant.
상세보기
Jaeger Raymond E. (Basking Ridge NJ) MacChesney John B. (Stirling NJ) Miller Thomas J. (Greenbrook NJ), Modified chemical vapor deposition of an optical fiber using an rf plasma.
상세보기
Busse Lynda E. (Lorton VA) Aggarwal Ishwar D. (Fairfax Station VA) Ewing Kenneth J. (Bowie MD) Harbison Barry B. (Clinton MD), Plasma chemical vapor deposition of halide glasses.
상세보기
Basta William C. (Montague MI) Punola David C. (Muskegon MI) Warnes Bruce M. (Muskegon MI), Platinum aluminide CVD coating method.
상세보기
Derderian,Garo J.; Morrison,Gordon, Preheating of chemical vapor deposition precursors.
상세보기
Proscia James W. (Dearborn MI), Preparation of fluorine-doped tungstic oxide.
상세보기
Fournes Jean-Paul (Milly la Foret FRX) Morbioli RenJ. (Corbeil FRX), Process and apparatus for the simultaneous deposition of a protective coating on internal and external surfaces of heat-.
상세보기
Grybowski Edward J. (Chester CT) Olson Walter E. (Vernon CT), Process for applying gas phase diffusion aluminide coatings.
상세보기
Restall James E. (Frimley GB2) Hayman Cecil (Rickmansworth GB2), Process for diffusion coating metals.
상세보기
Namiki Tsunehisa,JPX, Process for forming silicon oxide coating on plastic material.
상세보기
Galmiche ; Philippe M. ; Hivert ; Andre R. ; Walder ; Andre M., Process for forming surface diffusion alloy layers on refractory metallic articles.
상세보기
Desphandey Chandra V. (Los Angeles CA) Bunshah Rointan F. (Playa del Rey CA) Doerr Hans J. (Westlake Village CA), Process for making diamond, and doped diamond films at low temperature.
상세보기
Desphandey Chandra V. (Los Angeles CA) Bunshah Rointan F. (Playa del Ray CA) Doerr Hans J. (Simi Valley CA), Process for making diamond, doped diamond, diamond-cubic boron nitride composite films.
상세보기
Rairden ; III ; John R., Process of applying protective aluminum coatings for non-super-strength nickel-chromium alloys.
상세보기
Rairden ; III John R. (Niskayuna NY), Protective coatings for dispersion strengthened nickel-chromium/alloys.
상세보기
Fairbourn, David C., Roughened coatings for gas turbine engine components.
상세보기
Sekizuka Hiroshi (Shiroyama JPX), Sealing apparatus.
상세보기
Yamazaki,Shunpei; Takemura,Yasuhiko; Zhang,Hongyong, Semiconductor device and method of forming the same.
상세보기
Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX, Semiconductor device having reduced leakage current.
상세보기
Kim,Chang Tae, Semiconductor led device and producing method.
상세보기
Fairbourn,David C., Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings.
상세보기
Simpson, Michael L.; Lowndes, Douglas H.; Merkulov, Vladimir I.; Guillorn, Michael A.; Britton, Charles L., Single self-aligned carbon containing tips.
상세보기
Baldi Alfonso L. (Wynnewood PA), Stripping of diffusion treated metals.
상세보기
Ueda, Tohru, Substrate with a flattening film, display substrate, and method of manufacturing the substrates.
상세보기
Fuyama Moriaki (Hitachi JPX) Honda Haruhiko (Hitachi JPX) Ura Mitsuru (Hitachi JPX), Surface hafnium-titanium compound coated hard alloy material and method of producing the same.
상세보기
Vaartstra,Brian A.; Quick,Timothy A., Systems and method for forming silicon oxide layers.
상세보기
Vaartstra,Brian A., Systems and methods for forming metal oxides using alcohols.
상세보기
Vaartstra,Brian A.; Quick,Timothy A., Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands.
상세보기
Vaartstra, Brian A.; Westmoreland, Donald L., Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides.
상세보기
Vaartstra,Brian A., Systems and methods for forming metal-doped alumina.
상세보기
Vaartstra, Brian A., Systems and methods for forming refractory metal nitride layers using disilazanes.
상세보기
Vaartstra, Brian A., Systems and methods for forming refractory metal nitride layers using organic amines.
상세보기
Vaartstra, Brian A.; Uhlenbrock, Stefan, Systems and methods for forming strontium- and/or barium-containing layers.
상세보기
Vaartstra,Brian A.; Uhlenbrock,Stefan, Systems and methods for forming strontium-and/or barium-containing layers.
상세보기
Vaartstra,Brian A.; Quick,Timothy A., Systems and methods for forming tantalum oxide layers and tantalum precursor compounds.
상세보기
Vaartstra,Brian A., Systems and methods for forming tantalum silicide layers.
상세보기
Vaartstra,Brian A., Systems and methods for forming zirconium and/or hafnium-containing layers.
상세보기
Vaartstra,Brian A., Systems and methods of forming refractory metal nitride layers using disilazanes.
상세보기
Vaartstra,Brian A., Systems and methods of forming refractory metal nitride layers using disilazanes.
상세보기
Rickerby David S. (Derby GB2) White Daniel K. (Garnerville NY) Bell Stanley R. (Herts GB2), Thermal barrier coating for a superalloy article and method of application.
상세보기
Liu, Yourong; Lawton, Paul, Thermal barrier coating having low thermal conductivity.
상세보기
Strangman Thomas E. (Phoenix AZ), Thermal barrier coating system for superalloy components.
상세보기
Yamaga Kenichi,JPX ; Mikata Yuichi,JPX ; Yamamoto Akihito,JPX, Thermal processing method and apparatus therefor.
상세보기
Taniyama Tomoshi (Tokyo JPX) Kaihotsu Hideki (Tokyo JPX) Kanamori Yoshikatsu (Tokyo JPX) Ikeda Kazuhito (Tokyo JPX) Yonemitsu Shuji (Tokyo JPX), Thermal treatment furnace in a system for manufacturing semiconductors.
상세보기
Ohta Wasaburo (Yokohama JPX) Nakazawa Masashi (Yokohama JPX) Kinoshita Mikio (Kawasaki JPX), Thin film deposition system.
상세보기
Huang Jow-Lay,TWX ; Lee Ming-Tung,TWX, Tube chemical gas deposition method of preparing titanium nitride coated titanium carbide for titanium carbide/silicon n.
상세보기
Partus Fred P. (Atlanta GA), Vapor delivery system and method.
상세보기
Gauje Georges M. C. A. (Saulx les Chartreux FRX), Vapor phase process for the deposition of a protective metal coating on a metallic piece.
상세보기

IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 공고번호, 공고일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표출원인, 출원인국적, 출원인주소, 발명자, 발명자E, 발명자코드, 발명자주소, 발명자 우편번호, 발명자국적, 대표IPC, IPC코드, 요약, 미국특허분류, 대리인주소, 대리인코드, 대리인(한글), 대리인(영문), 국제공개일자, 국제공개번호, 국제출원일자, 국제출원번호, 우선권, 우선권주장일, 우선권국가, 우선권출원번호, 원출원일자, 원출원번호, 지정국, Citing Patents, Cited Patents
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Simple chemical vapor deposition systems for depositing multiple-metal aluminide coatings 원문보기

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Simple chemical vapor deposition systems for depositing multiple-metal aluminide coatings 원문보기

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