초록 ▼

Embodiments herein provide approaches for forming a diffusion break during a replacement metal gate process. Specifically, a semiconductor device is provided with a set of replacement metal gate (RMG) structures over a set of fins patterned from a substrate; a dielectric material over an epitaxial j

Embodiments herein provide approaches for forming a diffusion break during a replacement metal gate process. Specifically, a semiconductor device is provided with a set of replacement metal gate (RMG) structures over a set of fins patterned from a substrate; a dielectric material over an epitaxial junction area; an opening formed between the set of RMG structures and through the set of fins, wherein the opening extends through the dielectric material, the expitaxial junction area, and into the substrate; and silicon nitride (SiN) deposited within the opening to form the diffusion break.

대표청구항 ▼

1. A method for forming a device, the method comprising: providing a set of replacement metal gate (RMG) structures over a set of fins patterned from a substrate;providing a dielectric material over an epitaxial junction area;forming an opening between the set of RMG structures and through the set o

1. A method for forming a device, the method comprising: providing a set of replacement metal gate (RMG) structures over a set of fins patterned from a substrate;providing a dielectric material over an epitaxial junction area;forming an opening between the set of RMG structures and through the set of fins, wherein the opening extends through the dielectric material, the expitaxial junction area, and into the substrate; anddepositing silicon nitride (SiN) within the opening to form a diffusion break in the device. 2. The method according to claim 1, the depositing the SiN comprising forming a SiN liner along a surface of the opening. 3. The method according to claim 2, further comprising forming an oxide layer over the SiN liner. 4. The method according to claim 3, further comprising: patterning an opening over each of the set of RMG structures; andforming a spacer within the opening over each of the set of RMG structures. 5. The method according to claim 4, further comprising: removing a polysilicon material from each of the set of RMG structures selective to a top surface of the substrate;forming a metal material within each of the set of RMG structures;forming a SiN cap over the metal material within each of the set of RMG structures; anddepositing an interlayer dielectric oxide over the device. 6. The method according to claim 1, further comprising: patterning an opening over each of the set of RMG structures; anddepositing the SiN within the opening over each of the set of RMG structures. 7. The method according to claim 6, further comprising: removing a portion of the SiN over the device; anddepositing an interlayer dielectric oxide over the device. 8. A method for forming a diffusion break in a semiconductor device, the method comprising: providing a set of replacement metal gate (RMG) structures over a set of fins patterned from a substrate;providing a dielectric material over an epitaxial junction area;forming an opening between the set of RMG structures and through the set of fins, wherein the opening extends through the dielectric material, the expitaxial junction area, and into the substrate; anddepositing silicon nitride (SiN) within the opening to form the diffusion break in the semiconductor device. 9. The method according to claim 8, the depositing the SiN comprising forming a SiN liner along a surface of the opening. 10. The method according to claim 9, further comprising forming an oxide layer over the SiN liner. 11. The method according to claim 10, further comprising: patterning an opening over each of the set of RMG structures; andforming a spacer within the opening over each of the set of RMG structures. 12. The method according to claim 11, further comprising: removing a polysilicon material from each of the set of RMG structures selective to a top surface of the substrate;forming a metal material within each of the set of RMG structures;forming a SiN cap over the metal material within each of the set of RMG structures; anddepositing an interlayer dielectric oxide over the device. 13. The method according to claim 8, further comprising: patterning an opening over each of the set of RMG structures; anddepositing the SiN within the opening over each of the set of RMG structures. 14. The method according to claim 13, further comprising: removing a portion of the SiN over the device; anddepositing an interlayer dielectric oxide over the device. 15. A device, comprising: a set of replacement metal gate (RMG) structures over a set of fins patterned from a substrate;a dielectric material over an epitaxial junction area;an opening formed between the set of RMG structures and through the set of fins, wherein the opening extends through the dielectric material, the expitaxial junction area, and into the substrate; andsilicon nitride (SiN) deposited within the opening to form a diffusion break. 16. The device according to claim 15, the SiN comprising a SiN liner formed along a surface of the opening. 17. The device according to claim 16, further comprising an oxide layer formed over the SiN liner. 18. The device according to claim 17, further comprising: an opening patterned over each of the set of RMG structures; anda spacer formed within the opening over each of the set of RMG structures. 19. The device according to claim 18, further comprising: a SiN cap formed over the metal material within each of the set of RMG structures; andan interlayer dielectric oxide deposited over the device. 20. The device according to claim 15, further comprising: SiN formed within an opening over each of the set of RMG structures; andan interlayer dielectric oxide deposited over the device.