Substrate coating and method of forming the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B05D-001/36
H05H-001/24
B32B-007/02
B32B-009/00
B32B-009/04
C23C-016/32
C23C-016/27
C23C-030/00
C23C-016/503
출원번호
US-0046487
(2011-03-11)
등록번호
US-8852746
(2014-10-07)
우선권정보
TW-099113912 A (2010-04-30)
발명자
/ 주소
Ng, Kit Ling
Duan, Xin Chao
Chan, Po Ching
Chan, Winston
출원인 / 주소
Winsky Technology Limited
대리인 / 주소
Hamre, Schumann, Mueller & Larson, P.C.
인용정보
피인용 횟수 :
0인용 특허 :
5
초록▼
A substrate coating and a method of forming the same are provided. The substrate coating includes a first layer formed on a substrate, in which the composition of the first layer includes at least silicon-rich-carbon, and the amount of silicon is about equal to or greater than the amount of carbon;
A substrate coating and a method of forming the same are provided. The substrate coating includes a first layer formed on a substrate, in which the composition of the first layer includes at least silicon-rich-carbon, and the amount of silicon is about equal to or greater than the amount of carbon; and a second layer formed on the first layer, in which the composition of the second layer includes at least fluorine doped diamond-like-carbon. The substrate coating not only is easy to clean, has good wearing performance, and provides a smooth surface, but also has better adhesion to prevent peeling off.
대표청구항▼
1. A surface coating for a housing of an electronic product, comprising: a first layer, formed on a substrate, wherein a composition of the first layer comprises at least silicon-rich-carbon, wherein a ratio of silicon to carbon in the first layer falls between 2:1 and 20:1; anda second layer, forme
1. A surface coating for a housing of an electronic product, comprising: a first layer, formed on a substrate, wherein a composition of the first layer comprises at least silicon-rich-carbon, wherein a ratio of silicon to carbon in the first layer falls between 2:1 and 20:1; anda second layer, formed on the first layer, wherein a composition of the second layer comprises at least fluorine doped diamond-like-carbon. 2. The surface coating according to claim 1, wherein a ratio of silicon to carbon in the first layer falls between 3:1 and 20:1. 3. The surface coating according to claim 1, wherein the first layer serves as a stress matched interface between the second layer and the substrate. 4. The surface coating according to claim 1, wherein a ratio of fluorine to carbon in the fluorine doped diamond-like-carbon substantially falls within a range of 1:0.5 to 1:100. 5. The surface coating according to claim 1, wherein a ratio of fluorine to carbon in the fluorine doped diamond-like-carbon substantially falls within a range of 1:10 to 1:80. 6. The surface coating according to claim 1, wherein the first layer and the second layer are formed on the substrate by a Plasma Enhanced Chemical Vapor Deposition (PECVD) process. 7. The surface coating according to claim 1, wherein a thickness of the first layer and a thickness of the second layer are smaller than 100 nm respectively. 8. The surface coating according to claim 1, wherein the substrate is formed by glass, stainless steel, magnesium alloy, ceramic, aluminum, or aluminum alloy. 9. A method of forming a coating on a surface of a housing of an electronic product, comprising: forming a first layer on a substrate, wherein a composition of the first layer comprises at least silicon-rich-carbon, wherein a ratio of silicon to carbon in the first layer falls between 2:1 and 20:1; andforming a second layer on the first layer, wherein a composition of the second layer comprises at least fluorine doped diamond-like-carbon. 10. The method according to claim 9, wherein a ratio of silicon to carbon in the first layer falls between 3:1 and 20:1. 11. The method according to claim 9, wherein the first layer serves as a stress matched interface between the second layer and the substrate. 12. The method according to claim 9, wherein a ratio of fluorine to carbon in the fluorine doped diamond-like-carbon substantially falls within a range of 1:0.5 to 1:100. 13. The method according to claim 9, wherein a ratio of fluorine to carbon in the fluorine doped diamond-like-carbon substantially falls within a range of 1:10 to 1:80. 14. The method according to claim 9, wherein the first layer and the second layer are formed by a Plasma Enhanced Chemical Vapor Deposition (PECVD) process. 15. The method according to claim 9, wherein the substrate is formed by glass, stainless steel, magnesium alloy, ceramic, aluminum, or aluminum alloy. 16. The method according to claim 14, wherein an operating pressure is 0.1 Torr, and a deposition rate is 1 nm/min to 500 nm/min. 17. The method according to claim 14, further comprising: adjusting a bias voltage of a PECVD device. 18. The method according to claim 14, further comprising: introducing oxygen gas, nitrogen gas, argon gas, or helium gas for mixing with a reactant gas.
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이 특허에 인용된 특허 (5)
Donald J. Bray ; Chandra Venkatraman ; Craig A. Outten ; Christopher Halter ; Arvind Goel, Fluorine-doped diamond-like coatings.
Han, Licheng; Yi, Xu; Chooi, Simon; Zhou, Mei Sheng; Xie, Joseph Zhifeng, Method of using silicon rich carbide as a barrier material for fluorinated materials.
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