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An organic thin film transistor is disclosed, including a substrate formed of an organic insulating layer, a first layer deposited on the substrate using a plating technique to be used for forming a source electrode and a drain electrode, a second layer of a metal material deposited covering the fir

An organic thin film transistor is disclosed, including a substrate formed of an organic insulating layer, a first layer deposited on the substrate using a plating technique to be used for forming a source electrode and a drain electrode, a second layer of a metal material deposited covering the first layer using a further plating technique to be used for forming the source electrode and the drain electrode with the metal material capable of forming an ohmic contact with an organic semiconductor material lower than the first layer, and an organic semiconductor layer over a region between the source electrode and the drain electrode, which are each formed with the first layer and the second layer. Also disclosed is an electric device provided with the organic thin film transistor.

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1. An organic thin film transistor, comprising: a substrate;a gate electrode on the substrate;an organic insulating layer on the substrate, the organic insulating layer comprising an organic polymer material;source and drain electrodes, each including (a) a first layer comprising at least one of nic

1. An organic thin film transistor, comprising: a substrate;a gate electrode on the substrate;an organic insulating layer on the substrate, the organic insulating layer comprising an organic polymer material;source and drain electrodes, each including (a) a first layer comprising at least one of nickel (Ni) and copper (Cu) formed as a single layer by electroless plating directly on only a surface of the organic insulating layer, and (b) a second layer comprising a metal material, the second layer being formed by electroless plating as a separate layer over the first layer such that all top and side surfaces of the first layer are covered by the metal material of the second layer; andan organic semiconductor layer comprising an organic semiconductor material in a region between the source electrode and the drain electrode,wherein, the gate electrode underlies at least the region extending between the source and drain electrodes,the second layers have respective ohmic contacts with the organic semiconductor layer that are lower in resistance than those which would be had with the first layer alone,a surface of the organic insulating layer contains aminosilane mixed therein at least at portions of the organic polymer material on which the source and drain electrodes are disposed, andthe organic insulating layer is without damage that would otherwise result from a sputtering or firing process. 2. The organic thin film transistor according to claim 1, wherein the metal material of the second layer comprises at least one of gold (Au), platinum (Pt), and palladium (Pd). 3. The organic thin film transistor according to claim 1 or 2, wherein the organic insulating layer serves as a gate insulating film and the gate electrode is disposed under the gate insulating film. 4. An electric device, comprising an organic thin film transistor, the organic thin film transistor including: (i) a substrate;(ii) a gate electrode on the substrate;(iii) an organic insulating layer on the substrate, the organic insulating layer comprising an organic polymer material;(iv) source and drain electrodes, each including (a) a first layer comprising at least one of nickel (Ni) and copper (Cu) formed as a single layer by electroless plating directly on only a surface of the organic insulating layer, and (b) a second layer comprising a metal material, the second layer being formed by electroless plating as a separate layer over the first layer such that all top and side surfaces of the first layer are covered by the metal material of the second layer; and(v) an organic semiconductor layer comprising an organic semiconductor material in a region between the source electrode and the drain electrode,wherein, the gate electrode underlies at least the region extending between the source and drain electrodes,the second layers have respective ohmic contacts with the organic semiconductor layer that are lower in resistance than those which would be had with the first layer alone,a surface of the organic insulating layer contains aminosilane mixed therein at least at portions of the organic polymer material on which the source and drain electrodes are disposed, andthe organic insulating layer is without damage that would otherwise result from a sputtering or firing process. 5. The electric device according to claim 4, further comprising: an interlayer insulating film covering the organic thin film transistor; anda conductive pattern connected to one of the source electrode and the drain electrode through a via hole formed in the interlayer insulating film. 6. The electric device according to claim 5, wherein the conductive pattern is a pixel electrode. 7. The electric device according to claim 4, wherein the metal material of the second layer comprises at least one of gold (Au), platinum (Pt), and palladium (Pd).