Method for isolating flexible film from support substrate
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B29C-033/58
G02F-001/1333
G02F-001/136
출원번호
US-0571979
(2009-10-01)
등록번호
US-8883053
(2014-11-11)
우선권정보
TW-98112768 A (2009-04-17)
발명자
/ 주소
Chen, Dong-Sen
Wei, Hsiao-Fen
Jiang, Liang-You
Chang, Yu-Yang
출원인 / 주소
Industrial Technology Research Institute
대리인 / 주소
Lowe Hauptman & Ham, LLP
인용정보
피인용 횟수 :
0인용 특허 :
13
초록▼
Method for isolating a flexible film from a support substrate and method for fabricating an electronic device are provided. The method for isolating a flexible film from a support substrate includes providing a substrate with a top surface. A surface treatment is subjected to the top surface of the
Method for isolating a flexible film from a support substrate and method for fabricating an electronic device are provided. The method for isolating a flexible film from a support substrate includes providing a substrate with a top surface. A surface treatment is subjected to the top surface of the substrate, forming a top surface with detachment characteristics. A flexible film is formed on the top surface with detachment characteristics. The flexible film within the top surface with detachment characteristics is cut and isolated.
대표청구항▼
1. A method for fabricating a flexible electronic device, comprising: providing a support substrate with a top surface;subjecting a part of the top surface of the support substrate with a surface treatment, thereby forming a mold release region, wherein an adhesive region is the part of the top surf
1. A method for fabricating a flexible electronic device, comprising: providing a support substrate with a top surface;subjecting a part of the top surface of the support substrate with a surface treatment, thereby forming a mold release region, wherein an adhesive region is the part of the top surface beyond the mold release region;forming a flexible film on the top surface, wherein the flexible film covers the mold release region and the adhesive region;forming an electronic element on the flexible film; andcutting the flexible film within the mold release region to isolate a flexible electronic device from the support substrate,wherein the surface treatment comprises providing a chemical agent to react with the top surface of the support substrate; andwherein the chemical agent has the structure represented by wherein w is C, Si, or Ge; X is S, or Se; Y is C, or S; R1, R2, and R3 are independent and comprise H, alkenyl group, alkyl group, or —OR; R is C1-18 alkyl group; R4 is F, Br, I, carboxyl group, amino group, amine group, cyano group, amide group, alkyl halide group, or combinations thereof; R5 is Li; and R6, R7, and R8 are independent and comprise F, Cl, Br, I, alkenyl group, alkyl group, carboxyl group, amino group, amine group, cyano group, amide group, alkyl halide group, or combinations thereof. 2. The method as claimed in claim 1, wherein the support substrate comprises a metallic substrate, a plastic substrate, a ceramic substrate, a glass substrate, or a silicon wafer. 3. The method as claimed in claim 1, after subjecting the top surface of the support substrate to the surface treatment, functional groups of the treated top surface of the support substrate, which are able to form bonds with the flexible film, are consumed, covered or displaced. 4. The method as claimed in claim 3, wherein the functional groups which are able to be bonded with the flexible film comprise hydroxyl group, carboxyl group, amino group, or ester group. 5. The method as claimed in claim 3, wherein the bonds formed between the top surface of the support substrate and the flexible film comprises ionic bond, covalent bond or hydrogen bond. 6. The method as claimed in claim 1, wherein the chemical agent comprises chloromethyl trimethylsilane, 2-bromopropane, trimethyl fluorosilane, trimethyl bromosilane, trimethyl iodosilane, trimethylsilyl cyanide, thionyl chloride, lithium diisopropylamide, phosphorus trichloride, sulfuryl chloride, or combinations thereof. 7. The method as claimed in claim 1, wherein the chemical agent is formed on the top surface of the support substrate by dip coating, spin coating, stamping, scraping, or roll-coating. 8. The method as claimed in claim 1, wherein the flexible film comprises polyimide (PI), polycarbonate (PC), polyethersulfone (PES), polynorbornene (PNB), polyetherimide (PEI), polyethylene naphthalate (PEN) or polyethylene terephthalate (PET). 9. The method as claimed in claim 1, before forming the flexible film on the top surface of the support substrate, further comprising: forming a functional film on the support substrate, wherein the functional film comprises a stress reduction film, an anti-scratch film, an anti-reflection film, a gas barrier film or lamination thereof. 10. The method as claimed in claim 1, wherein the flexible film is formed on the top surface of the support substrate by wet coating or evaporation. 11. The method as claimed in claim 1, wherein the flexible film is preformed and is disposed on the top surface of the support substrate by adhering. 12. The method as claimed in claim 1, wherein the adherence between the flexible film within the mold release region and the support substrate is less than the adherence between the flexible film within the adhesive region and the support substrate. 13. The method as claimed in claim 1, wherein the size of the flexible electronic device is equal to the size of the mold release region. 14. The method as claimed in claim 1, wherein the size of the flexible electronic device is less than that of the mold release region. 15. The method as claimed in claim 1, wherein the flexible electronic device comprises a transistor array, a memory element, a flat panel display, a solar cell, a semiconductor current, or combinations thereof.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (13)
Hayden Don, Capped silicone film and method of manufacture thereof.
Veerasamy, Vijayen S.; Petrmichl, Rudolph Hugo, Method of ion beam milling a glass substrate prior to depositing a coating system thereon, and corresponding system for carrying out the same.
Breen, Tricia L.; Kosbar, Laura L.; Mastro, Michael P.; Nunes, Ronald W., Vapor phase surface modification of composite substrates to form a molecularly thin release layer.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.