A semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axi
A semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
대표청구항▼
1. A method of manufacturing a semiconductor device comprising the steps of: producing sputtered particles by cleaving a target along an a-b plane of crystals of the target, the target comprising a polycrystalline oxide semiconductor material comprising indium and zinc;depositing the sputtered parti
1. A method of manufacturing a semiconductor device comprising the steps of: producing sputtered particles by cleaving a target along an a-b plane of crystals of the target, the target comprising a polycrystalline oxide semiconductor material comprising indium and zinc;depositing the sputtered particles onto a surface over a substrate to form an oxide semiconductor film including a crystalline structure; andheating the oxide semiconductor film to reduce a concentration of hydrogen,wherein the crystalline structure has a c-axis being parallel to a normal vector of a surface of the oxide semiconductor film. 2. The method according to claim 1, wherein the sputtered particles maintain an original crystal state when the sputtered particles reach the surface over the substrate. 3. The method according to claim 1, wherein a crystal state of the target is transferred to the substrate by depositing the sputtered particles. 4. The method according to claim 1, wherein the sputtered particles have a flat-plate-like shape. 5. The method according to claim 1, wherein the sputtered particles have a pellet-like shape. 6. The method according to claim 1, wherein the polycrystalline oxide semiconductor material further comprises gallium. 7. The method according to claim 1, wherein the polycrystalline oxide semiconductor material further comprises at least one element selected from the group consisting of Sn, Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. 8. The method according to claim 1, wherein the oxide semiconductor film is formed at a substrate temperature of 200° C. or higher. 9. The method according to claim 1, wherein the oxide semiconductor film is formed in a gas containing oxygen at 80 vol. % or greater. 10. The method according to claim 1, further comprising a step of etching the oxide semiconductor film to form an oxide semiconductor layer including a channel of a transistor. 11. The method according to claim 1, wherein the c-axis in the crystalline structure is aligned in a direction within a range from −5° to 5° to the normal vector of the surface of the oxide semiconductor film. 12. The method according to claim 1, further comprising the step of heating the oxide semiconductor film in an atmosphere comprising oxygen after the heating step. 13. A method of manufacturing a semiconductor device comprising the steps of: producing sputtered particles by cleaving a target along an a-b plane of crystals of the target, the target comprising a polycrystalline oxide semiconductor material comprising indium and zinc; anddepositing the sputtered particles onto a surface over a substrate to form an oxide semiconductor film including a crystalline structure,wherein the crystalline structure has a c-axis being parallel to a normal vector of a surface of the oxide semiconductor film. 14. The method according to claim 13, wherein the sputtered particles maintain an original crystal state when the sputtered particles reach the surface over the substrate. 15. The method according to claim 13, wherein a crystal state of the target is transferred to the substrate by depositing the sputtered particles. 16. The method according to claim 13, wherein the sputtered particles have a flat-plate-like shape. 17. The method according to claim 13, wherein the sputtered particles have a pellet-like shape. 18. The method according to claim 13, wherein the polycrystalline oxide semiconductor material further comprises gallium. 19. The method according to claim 13, wherein the polycrystalline oxide semiconductor material further comprises at least one element selected from the group consisting of Sn, Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. 20. The method according to claim 13, wherein the oxide semiconductor film is formed at a substrate temperature of 200° C. or higher. 21. The method according to claim 13, wherein the oxide semiconductor film is formed in a gas containing oxygen at 80 vol. % or greater. 22. The method according to claim 13, further comprising a step of etching the oxide semiconductor film to form an oxide semiconductor layer including a channel of a transistor. 23. The method according to claim 13, wherein the c-axis in the crystalline structure is aligned in a direction within a range from −5° to 5° to the normal vector of the surface of the oxide semiconductor film. 24. A method of manufacturing a semiconductor device comprising the steps of: producing sputtered particles by cleaving a target along an a-b plane of crystals of the target, the target comprising a polycrystalline oxide semiconductor material comprising indium and zinc;depositing the sputtered particles onto a surface over a substrate to form an oxide semiconductor film including a crystalline structure; andheating the substrate at a temperature of 100° C. or higher while depositing the sputtered particles,wherein the crystalline structure has a c-axis being parallel to a normal vector of a surface of the oxide semiconductor film. 25. The method according to claim 24, wherein the sputtered particles maintain an original crystal state when the sputtered particles reach the surface over the substrate. 26. The method according to claim 24, wherein a crystal state of the target is transferred to the substrate by depositing the sputtered particles. 27. The method according to claim 24, wherein the sputtered particles have a flat-plate-like shape. 28. The method according to claim 24, wherein the sputtered particles have a pellet-like shape. 29. The method according to claim 24, wherein the polycrystalline oxide semiconductor material further comprises gallium. 30. The method according to claim 24, wherein the polycrystalline oxide semiconductor material further comprises at least one element selected from the group consisting of Sn, Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. 31. The method according to claim 24, wherein the oxide semiconductor film is formed in a gas containing oxygen at 80 vol. % or greater. 32. The method according to claim 24, further comprising a step of etching the oxide semiconductor film to form an oxide semiconductor layer including a channel of a transistor. 33. The method according to claim 24, wherein the c-axis in the crystalline structure is aligned in a direction within a range from −5° to 5° to the normal vector of the surface of the oxide semiconductor film.
Shindo,Yuichiro; Takemoto,Kouichi, High purity zinc oxide powder and method for production thereof, and high purity zinc oxide target and thin film of high purity zinc oxide.
Hosono,Hideo; Hirano,Masahiro; Ota,Hiromichi; Orita,Masahiro; Hiramatsu,Hidenori; Ueda,Kazushige, LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film.
Kim Dong-Gyu,KRX ; Lee Won-Hee,KRX, Methods for forming liquid crystal displays including thin film transistors and gate pads having a particular structure.
Levy,David H.; Scuderi,Andrea C.; Irving,Lyn M., Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby.
Hosono,Hideo; Ota,Hiromichi; Orita,Masahiro; Ueda,Kazushige; Hirano,Masahiro; Kamiya,Toshio, Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film.
Umeda, Kenichi; Hirai, Hiroyuki; Tanaka, Atsushi; Kohda, Katsuhiro; Higashi, Kohei; Sunagawa, Hiroshi, Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film.
Cillessen Johannes F. M.,NLX ; Blom Paulus W. M.,NLX ; Wolf Ronald M. ; Giesbers Jacobus B.,NLX, Semiconductor device having a transparent switching element.
Ito,Yoshihiro; Kadota,Michio, Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device.
Inoue,Kazuyoshi; Kawamura,Hisayuki, Sputtering target, sintered article, conductive film fabricated by utilizing the same, organic EL device, and substrate for use therein.
Inoue,Kazuyoshi; Kawamura,Hisayuki, Sputtering target, sintered compact, electrically conductive film produced by using the same, and organic EL device and substrate used for the same.
Ishii,Hiromitsu; Hokari,Hitoshi; Yoshida,Motohiko; Yamaguchi,Ikuhiro, Thin film transistor having an etching protection film and manufacturing method thereof.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.