A driving circuit for driving an insulated gate semiconductor device based on a voltage of an externally-inputted gate signal, where the insulated gate semiconductor device has a source, a drain and a gate, and a parasitic capacitor exists between the drain and the gate. The driving circuit includes
A driving circuit for driving an insulated gate semiconductor device based on a voltage of an externally-inputted gate signal, where the insulated gate semiconductor device has a source, a drain and a gate, and a parasitic capacitor exists between the drain and the gate. The driving circuit includes a gate voltage controlling semiconductor device disposed between, and connecting, the gate and the source of the insulated gate semiconductor device. The gate voltage controlling semiconductor device has a source and a gate, and is driven by a current charging the parasitic capacitor. The driving circuit also includes a pull-up device disposed between, and connecting, the source and the drain of the gate voltage controlling semiconductor device.
대표청구항▼
1. A driving circuit for driving an insulated gate semiconductor device based on a voltage of an externally-inputted gate signal, the insulated gate semiconductor device having a source, a drain and a gate, a parasitic capacitor existing between the drain and the gate, the driving circuit comprising
1. A driving circuit for driving an insulated gate semiconductor device based on a voltage of an externally-inputted gate signal, the insulated gate semiconductor device having a source, a drain and a gate, a parasitic capacitor existing between the drain and the gate, the driving circuit comprising: a gate voltage controlling semiconductor device disposed between, and connecting, the gate and the source of the insulated gate semiconductor device, the gate voltage controlling semiconductor device having a source, a drain and a gate, and being driven by a current that charges the parasitic capacitor; anda depletion mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) disposed between and directly connecting the gate and the drain of the gate voltage controlling semiconductor device, the depletion mode MOSFET being configured to raise a gate voltage of the gate voltage controlling semiconductor device, so as to turn on the gate voltage controlling semiconductor device to pull-out the current at a turning-on operation of the insulated gate semiconductor device. 2. The driving circuit of claim 1, wherein the gate voltage controlling semiconductor device has a threshold voltage, andthe gate voltage controlling semiconductor device enters a turned-off state when the gate signal voltage is equal to or higher than a reference voltage higher than the threshold voltage, and enters a turned-on state only when the gate signal voltage is lower than the reference voltage. 3. The driving circuit of claim 2, further comprising a threshold value control circuit that controls driving of the gate voltage controlling semiconductor device, the threshold value control circuit having a diode disposed between a high-potential side and a low-potential side thereof, to prevent a current from flowing from the depletion mode MOSFET to a power supply on the high-potential side of the threshold value control circuit. 4. The driving circuit of claim 1, wherein the gate voltage controlling semiconductor device has a threshold voltage, andthe gate voltage controlling semiconductor device enters a turned-off state when the gate signal voltage is equal to or higher than a reference voltage higher than the threshold voltage, and enters a turned-on state only when the gate signal voltage is lower than the reference voltage. 5. The driving circuit of claim 4, further comprising a threshold value control circuit that controls driving of the gate voltage controlling semiconductor device, the threshold value control circuit having a diode disposed between a high-potential side and a low-potential side thereof, to prevent a current from flowing from the depletion mode MOSFET to a power supply on the high-potential side of the threshold value control circuit. 6. The driving circuit of claim 1, further comprising a threshold value control circuit that controls driving of the gate voltage controlling semiconductor device, the threshold value control circuit having a diode disposed between a high-potential side and a low-potential side thereof, to prevent a current from flowing from the depletion mode MOSFET to a power supply on the high-potential side of the threshold value control circuit. 7. A driving circuit for driving an insulated gate semiconductor device based on a voltage of an externally-inputted gate signal, the insulated gate semiconductor device having a source, a drain and a gate, a parasitic capacitor existing between the drain and the gate, the driving circuit comprising: a gate voltage controlling semiconductor device disposed between, and connecting, the gate and the source of the insulated gate semiconductor device, the gate voltage controlling semiconductor device having a source, a drain and a gate, and being driven by a current that charges the parasitic capacitor; anda depletion mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) disposed between and directly connecting the gate and the drain of the gate voltage controlling semiconductor device, the depletion mode MOSFET being configured to raise a gate voltage of the gate voltage controlling semiconductor device, so as to turn on the gate voltage controlling semiconductor device to pull-out the current at a turning-off operation of the insulated gate semiconductor device.
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Ando, Koji, Internal combustion engine ignition device and igniter for same.
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