초록 ▼

A chip layout for a high speed semiconductor device is disclosed. The chip layout isolates Rx terminals and Rx ports from Tx terminals and Tx ports. A serial interface is centrally located to reduce latency, power and propagation delays. Stacked die that contain one or more devices with the chip lay

A chip layout for a high speed semiconductor device is disclosed. The chip layout isolates Rx terminals and Rx ports from Tx terminals and Tx ports. A serial interface is centrally located to reduce latency, power and propagation delays. Stacked die that contain one or more devices with the chip layout are characterized by having improved latency, bandwidth, power consumption, and propagation delays.

대표청구항 ▼

1. A semiconductor device comprising: a first die comprising: at least two IP cores on the first die, wherein at least one of the IP cores is disposed on each side of a centrally-located axis on the first die, anda serial interface positioned on the central region of the first die between said IP co

1. A semiconductor device comprising: a first die comprising: at least two IP cores on the first die, wherein at least one of the IP cores is disposed on each side of a centrally-located axis on the first die, anda serial interface positioned on the central region of the first die between said IP cores on the first die, wherein the serial interface includes a plurality of transmitter ports and a plurality of receiver ports. 2. The semiconductor device of claim 1, further comprising: a package substrate upon which the first die is mounted;a plurality of Tx data lines disposed in the package substrate, wherein each of the Tx data lines originates from a respective one of the Tx ports on said semiconductor device, wherein each Tx port transmits a data signal from one of the IP cores to a respective one of the Tx data lines; anda plurality of Rx data lines disposing in the package substrate, wherein each of the Rx data lines terminates at a respective one of the Rx ports on said semiconductor device, wherein each Rx port receives a data signal from a respective one of the Rx Lines to communicate to one of said IP cores on the first die. 3. The semiconductor device of claim 2, wherein the Tx data lines in the package substrate are nonparallel to said Rx data lines in the package substrate. 4. The semiconductor device of claim 2, wherein the first die is encapsulated in package substrate that includes multiple routing layers. 5. The semiconductor device of claim 4, wherein said package is either a BGA or an LGA package. 6. The semiconductor device of claim 4, wherein neither said Tx data lines in the package substrate nor said Rx data lines in the package substrate cross over each other within any of the routing layers of the package substrate. 7. The semiconductor device of claim 2, wherein: none of the Tx data lines in the package substrate are adjacent to any of the Rx data lines in the package substrate. 8. The semiconductor device of claim 2, wherein: none of the Tx data lines in the package substrate cross over each other; andnone of the Rx data lines in the package substrate cross over each other. 9. The semiconductor device of claim 2, wherein: none of the Tx data lines in the package substrate are interleaved with any of the Rx data lines in the package substrate. 10. The semiconductor device of claim 1, wherein the IP cores on the semiconductor device are selected from either a memory block, programmable logic block, network processor, or a combination of the above. 11. The semiconductor device of claim 1 wherein: the serial interface is positioned off-center on the first die. 12. The semiconductor device of claim 1 wherein: the at least two IP cores are symmetrically located with respect to the centrally-located axis. 13. The semiconductor device of claim 1, further comprising: a second die coupled to the first die. 14. The semiconductor device of claim 13, wherein the second die is identical to the first die. 15. The semiconductor device of claim 13, wherein the first die and the second die are coupled to form a stacked die that is encapsulated in a package that includes multiple routing layers. 16. The semiconductor device of claim 13, further comprising: a plurality of transmit (Tx) data lines, originating from the first die and terminating at the second die, wherein none of the plurality of Tx data lines cross over each other. 17. The semiconductor device of claim 13, further comprising: a plurality of receive (Rx) data lines terminating at the first die having originated from the second die, wherein none of the plurality of Rx data lines cross over each other. 18. The semiconductor device of claim 13 further comprising: a plurality of transmit (Tx) data lines, originating from the first die and terminating at the second die; anda plurality of receive (Rx) data lines terminating at the first die having originated from the second die; and wherein: none of the plurality of Tx data lines crosses over any of the plurality of Rx data lines. 19. The semiconductor device of claim 13 further comprising: a plurality of transmit (Tx) data lines, originating from the first die and terminating at the second die; anda plurality of receive (Rx) data lines terminating at the first die having originated from the second die; and wherein: none of the Tx data lines are adjacent to any of the Rx data lines. 20. The semiconductor device of claim 13 further comprising: a plurality of transmit (Tx) data lines, originating from the first die and terminating at the second die; anda plurality of receive (Rx) data lines terminating at the first die having originated from the second die; and wherein: none of the Tx data lines are interleaved with any of the Rx data lines. 21. A semiconductor device comprising: a die comprising: at least two IP cores disposed on the die, wherein at least one of the IP cores is disposed on each side of a centrally-located axis on the die; anda serial interface positioned on a central region of the die between the at least two IP cores on the die, wherein the serial interface includes a plurality of transmitter ports and a plurality of receiver ports;a package substrate upon which the die is mounted;a plurality of Tx data lines disposed in the package substrate, wherein each of the Tx data lines originates from a respective one of the Tx ports on the semiconductor device, wherein each Tx port transmits a data signal from one of the IP cores to a respective one of the Tx data lines; anda plurality of Rx data lines disposed in the package substrate, wherein each of the Rx data lines terminates at a respective one of the Rx ports on the semiconductor device, wherein each Rx port receives a data signal from a respective one of the Rx lines to communicate to one of the IP cores on the die; and wherein: none of the Tx data lines in the package substrate are interleaved with any of the Rx data lines in the package substrate.