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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0791125 (2013-03-08) |
등록번호 | US-8921234 (2014-12-30) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 90 인용 특허 : 418 |
Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into
Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.
1. A method of etching a patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate includes an exposed titanium nitride region and a region comprising an exposed second material, the method comprising: flowing a fluorine-containing precur
1. A method of etching a patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate includes an exposed titanium nitride region and a region comprising an exposed second material, the method comprising: flowing a fluorine-containing precursor into a remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the remote plasma region to produce plasma effluents, wherein the substrate processing region is at least partially separated from the remote plasma region by a showerhead or chamber wall;flowing at least one additional precursor into the substrate processing region; andetching the exposed titanium nitride region with the precursor combination including the plasma effluents, wherein the titanium nitride is etched at a faster rate than the exposed second material, and wherein the exposed second material comprises at least one of silicon oxide, silicon nitride, and tungsten. 2. The method of claim 1, wherein the at least one additional precursor is selected from the group consisting of helium, argon, and molecular hydrogen (H2). 3. The method of claim 1, wherein the fluorine-containing precursor comprises a precursor selected from the group consisting of atomic fluorine, diatomic fluorine, nitrogen trifluoride, carbon tetrafluoride, hydrogen fluoride, and xenon difluoride. 4. The method of claim 1, wherein the plasma in the remote plasma region is a capacitively-coupled plasma. 5. The method of claim 1, wherein the substrate processing region is plasma-free during the etching process. 6. The method of claim 1, wherein the at least one additional precursor consists of either or both of helium and argon. 7. The method of claim 6, wherein the precursor combination including plasma effluents is substantially devoid of hydrogen. 8. The method of claim 6, wherein the exposed second material comprises silicon oxide and the selectivity of the etching operation (exposed titanium nitride region: exposed silicon oxide region) is greater than or about 5:1. 9. The method of claim 8, wherein the selectivity of the etching operation (exposed titanium nitride region: exposed silicon oxide region) is greater than or about 10:1. 10. The method of claim 6, wherein the substrate temperature is maintained at or below about 50° C. during the etch process. 11. The method of claim 10, wherein the substrate temperature is maintained at or below about 10° C. during the etch process. 12. The method of claim 1, wherein the at least one additional precursor comprises hydrogen. 13. The method of claim 12, wherein the exposed second material comprises tungsten and the selectivity of the etching operation (exposed titanium nitride region: exposed tungsten region) is greater than or about 50:1. 14. The method of claim 13, wherein the selectivity of the etching operation (exposed titanium nitride region: exposed tungsten region) is greater than or about 100:1. 15. The method of claim 13, wherein the patterned substrate further comprises an exposed silicon nitride region and the selectivity of the etching operation (exposed titanium nitride region: exposed silicon nitride region) is greater than or about 10:1. 16. The method of claim 13, wherein the patterned substrate further comprises an exposed silicon oxide region and the selectivity of the etching operation (exposed titanium nitride region: exposed silicon oxide region) is greater than or about 5:1. 17. The method of claim 13, wherein the patterned substrate further comprises an exposed tantalum nitride region and the selectivity of the etching operation (exposed titanium nitride region: exposed tantalum nitride region) is greater than or about 10:1. 18. The method of claim 12, wherein the substrate temperature is maintained at or above about 50° C. during the etch process. 19. The method of claim 18, wherein the substrate temperature is maintained at or above about 200° C. during the etch process. 20. The method of claim 12, wherein the hydrogen is flowed into the substrate processing region without being first excited in a remote plasma. 21. The method of claim 12, wherein the hydrogen comprises molecular hydrogen (H2).
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