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A process is provided for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a compo

A process is provided for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition comprising a precursor selected from the group consisting of an organosilane, an aminosilane, and mixtures thereof, wherein the amorphous silicon carbide antireflective coating is a film represented by the formula SivCxNuHyFz, wherein v+x+u+y+z=100%, v is from 1 to 35 atomic %, x is from 5 to 80 atomic %, u is from 0 to 50 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %.

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1. A process for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition co

1. A process for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition comprising a precursor selected from the group consisting of (a) cyclic silazane compounds of the formula (NR1SiR1R3)x, where R1 and R3 are independently H, C1 to C4, linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; and x is an integer from 2 to 8;(b) cyclic carbosilane compounds of the formula (CR1R3SiR1R3)x, where R1 and R3 are independently H, C1 to C4, linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; and x is an integer from 2 to 8;(c) non-cyclic alkyl silanes of the formula (R1nR2mR3oR4p)Si—H4-t, where R1 to R4 can be C1 to C4 linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; and t=n+m+o+p and t=1 to 4;(d) compounds of the formula R1n(NR2)4-nSi, where R1 is independently H or C1 to C4 linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated hydrocarbon; R2 is independently C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon; and n is 0 to 3;(e) compounds of the formula R1n(NR2)3-nSi—SiR3m(NR4)3-m where R1 and R3 are independently H or C1 to C4 linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated hydrocarbon; R2 and R4 are independently C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon; and n is 0 to 3, m is 0 to 3;(f) compounds of the formula R1n(NR2)3-nSi—R5—SiR3m(NR4)m-3 where R1 and R3 are independently H or C1 to C4 linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated hydrocarbon; R2, R4 and R5 are independently C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon, alternatively, R5 is an amine or an organoamine group; n is 0 to 3; and m is 0 to 3;(g) compounds of the formula (R1n(NR2)3-nSi)tCH4-t where R1 is independently H or C1 to C4 linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated hydrocarbon; R2 is independently C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon; n is 0 to 3; and t is 1 to 3;(h) bis(tertiarybutylamino)silane; and mixtures thereof;whereinthe amorphous silicon carbide antireflective coating is a film formed without ammonia or N2 and represented by the formula SivCxNuHyFz, wherein v+x+u+y+z=100%, v is from 1 to 35 atomic %, x is from 5 to 80 atomic %, u is from 0 to 50 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %. 2. The process of claim 1 wherein the substrate is texturized. 3. The process of claim 1 wherein the composition further comprises a hydrocarbon. 4. The process of claim 1 wherein the aminosilane is bis(tertiarybutylamino)silane. 5. The process of claim 3 wherein the hydrocarbon is distinct from the precursor. 6. The process of claim 1 wherein the precursor is at least one non-cyclic alkyl silane of the formula (R1nR2mR3oR4p)Si—H4-t, where R1-R4 can be C1 to C4 linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; and t=n+m+o+p and t=1 to 4. 7. The process of claim 6 wherein the precursor is selected from the group consisting of: monomethylsilane, dimethylsilane, trimethylsilane, and tetramethylsilane. 8. The process of claim 7 wherein the precursor is tetramethylsilane. 9. The process of claim 3 wherein the hydrocarbon is selected from the group consisting of: 1) cyclic hydrocarbons of the general formula CnH2n where n=4-14, wherein the number of carbons in the cyclic structure is between 4 and 12;2) linear or branched, saturated, singly or multiply unsaturated hydrocarbons of the general formula CnH(2n+2)-2y, where n=2-20 and where y=units of unsaturation;3) singly or multiply unsaturated cyclic hydrocarbons of the general formula CnH2n-2x, where x is the number of unsaturated sites in the hydrocarbon molecule; and n=4-14, where the number of carbons in the cyclic structure is between 4 and 10;4) bicyclic hydrocarbons of the general formula CnH2n-2, where n=4-14, and where the number of carbons in the bicyclic structure is between 4 and 12;5) multiply unsaturated bicyclic hydrocarbons of the general formula CnH2n-(2+2x), where x is the number of unsaturated sites in the molecule; and n=4-14, and where the number of carbons in the bicyclic structure is between 4 and 12; and6) tricyclic hydrocarbons of the general formula CnH2n-4 where n=4-14, and where the number of carbons in the tricyclic structure is between 4 and 12. 10. The process of claim 9 wherein the hydrocarbon is selected from the group consisting of: cyclohexane, trimethylcyclohexane, 1-methyl-4(1-methylethyl)cyclohexane, cyclooctane, methylcyclooctane, cyclooctene, cyclooctadiene, cycloheptene, cyclopentene, cyclohexene, 1,5,9-cyclododecatriene, ethylene, propylene, acetylene, neohexane, cyclohexene, vinylcyclohexane, dimethylcyclohexene, t-butylcyclohexene, alpha-terpinene, pinene, 1,5-dimethyl-1,5-cyclooctadiene, vinyl-cyclohexene, norbornane, spiro-nonane, decahydronaphthalene, camphene, norbornene, norbornadiene, and adamantane.