Ionizing radiation blocking in IC chip to reduce soft errors
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/00
H01L-023/532
H01L-023/556
출원번호
US-0836819
(2007-08-10)
등록번호
US-8999764
(2015-04-07)
발명자
/ 주소
Farooq, Mukta G.
Melville, Ian D.
Petrarca, Kevin S.
Rodbell, Kenneth P.
출원인 / 주소
International Business Machines Corporation
대리인 / 주소
Brown, Katherine S.
인용정보
피인용 횟수 :
0인용 특허 :
29
초록▼
Methods of blocking ionizing radiation to reduce soft errors and resulting IC chips are disclosed. One embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming at least one back end of line (BEOL) dielectric layer including ionizing radiation blocking m
Methods of blocking ionizing radiation to reduce soft errors and resulting IC chips are disclosed. One embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming at least one back end of line (BEOL) dielectric layer including ionizing radiation blocking material therein. Another embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming an ionizing radiation blocking layer positioned in a back end of line (BEOL) of the IC chip. The ionizing radiation blocking material or layer absorbs ionizing radiation and reduces soft errors within the IC chip.
대표청구항▼
1. A method comprising: forming a first layer of an integrated circuit (IC) chip, the first layer including at least one of a transistor, resistor, capacitor or interconnecting wire;forming a first metallization layer over the first layer;forming at least one dielectric layer over the first metalliz
1. A method comprising: forming a first layer of an integrated circuit (IC) chip, the first layer including at least one of a transistor, resistor, capacitor or interconnecting wire;forming a first metallization layer over the first layer;forming at least one dielectric layer over the first metallization layer, the at least one dielectric layer including ionizing radiation blocking material therein, wherein the ionizing radiation blocking material is configured to block or absorb ionizing radiation, and wherein the ionizing radiation blocking material forms a substantially complete plane over the first layer,wherein the forming of the ionizing radiation blocking material includes: forming a conductor in a first dielectric layer;forming a second dielectric layer over the conductor;forming an ionizing radiation blocking film over the second dielectric layer;forming an opening through the ionizing radiation blocking film;filling the opening with a third dielectric layer; andforming a contact through the third dielectric layer to the conductor,wherein an inner edge of the ionizing radiation blocking film is distanced from an edge of the contact and the conductor laterally overlaps the opening; andforming an additional dielectric layer over the at least one dielectric layer,wherein the substantially complete plane formed by the ionizing radiation blocking material remains intact during the forming of the additional dielectric layer. 2. The method of claim 1, wherein the at least one dielectric layer includes a polyimide and the ionizing radiation blocking material includes copper (Cu). 3. The method of claim 1, wherein the ionizing radiation blocking material is selected from the group consisting of: hafnium (Hf), zirconium (Zr), graphite (C), cadmium (Cd), cobalt (Co) and copper (Cu). 4. The method of claim 1, wherein a dielectric of the at least one dielectric layer is selected from the group consisting of: a polymer and an oxide. 5. The method of claim 4, wherein the polymer includes a polyimide. 6. The method of claim 1, wherein the ionizing radiation includes an alpha particle. 7. The method of claim 1, wherein the at least one dielectric layer includes one of: a last dielectric layer or a penultimate dielectric layer. 8. The method of claim 1, wherein the at least one dielectric layer forming includes forming a dielectric with the ionizing radiation blocking material previously combined therein. 9. The method of claim 1, wherein the at least one dielectric layer forming includes simultaneously forming a dielectric and combining the ionizing radiation blocking material therein. 10. The method of claim 1, wherein the at least one dielectric layer includes a single dielectric layer. 11. A method comprising: forming a first layer of an integrated circuit (IC) chip, the first layer including at least one of a transistor, resistor, capacitor or interconnecting wire;forming a second layer over the first layer of the IC chip, the second layer including an ionizing radiation blocking layer configured to block or absorb ionizing radiation, wherein the ionizing radiation blocking material forms a substantially complete plane over the first layer,wherein the ionizing radiation blocking layer forming includes: forming a conductor in a first dielectric layer;forming a second dielectric layer over the conductor;forming an ionizing radiation blocking film over the second dielectric layer;forming an opening through the ionizing radiation blocking film;filling the opening with a third dielectric layer; andforming a contact through the third dielectric layer to the conductor,wherein an inner edge of the ionizing radiation blocking film is distanced from an edge of the contact and the conductor laterally overlaps the opening,wherein the second layer forming includes forming the ionizing radiation blocking layer across more than one second layer, the ionizing radiation blocking layer being laterally discontinuous in any one second layer but forming the substantially complete plane in a vertical sense; andforming a dielectric layer over the second layer, wherein the substantially complete plane formed by the ionizing radiation blocking material remains intact during the forming of the dielectric layer. 12. The method of claim 11, further comprising forming a fourth dielectric layer over the ionizing radiation blocking film prior to forming the opening, the fourth dielectric layer being of the same material as the second dielectric layer. 13. The method of claim 11, wherein the second dielectric layer distances the ionizing radiation blocking film from the conductor. 14. The method of claim 11, wherein the ionizing radiation blocking layer includes a discontinuous ionizing radiation blocking film and an operational conductor overlapping a discontinuity of the ionizing radiation blocking film. 15. The method of claim 14, wherein the ionizing radiation blocking film is selected from the group consisting of: hafnium (Hf), zirconium (Zr), graphite (C), cadmium (Cd), cobalt (Co) and copper (Cu).
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이 특허에 인용된 특허 (29)
Valente Thomas J. ; Charmasson Henri J. A., Dielectric materials high metallic content.
Mukai Kiichiro (Hachioji JPX) Saiki Atsushi (Musashimurayama JPX) Harada Seiki (Hachioji JPX), Integrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrate.
Godschalx James P. ; Romer Duane R. ; So Ying Hung ; Lysenko Zenon ; Mills Michael E. ; Buske Gary R. ; Townsend ; III Paul H. ; Smith ; Jr. Dennis W. ; Martin Steven J. ; DeVries Robert A., Polyphenylene oligomers and polymers.
Trenkler George (Providence RI) Delagi Richard G. (Sharon MA) Padovani Francois A. (Westwood MA) Winslow Donald L. (Raynham MA), Shielding material and shielded room.
Juskey Frank J. (Coral Springs FL) Suppelsa Anthony B. (Coral Springs FL), Thermally conductive integrated circuit package with radio frequency shielding.
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