[특허]Process chamber component having yttrium—aluminum coating

[미국특허] Process chamber component having yttrium—aluminum coating 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-004/10 B05C-011/00 B32B-015/04 B32B-015/20 C25D-003/54 C23C-016/44 C23C-030/00 C25D-005/50 H01J-037/32 H01L-021/67 C23C-028/00 C25D-003/44 C25D-003/56 C25D-005/18
출원번호	US-0368255 (2012-02-07)
등록번호	US-9012030 (2015-04-21)
발명자 / 주소	Han, Nianci Xu, Li Shih, Hong
출원인 / 주소	Applied Materials, Inc.
대리인 / 주소	Janah, Ashok K.
인용정보	피인용 횟수 : 2 인용 특허 : 90

초록

A substrate processing chamber component comprising a chamber component structure having an yttrium-aluminum coating. The yttrium-aluminum coating comprises a compositional gradient through a thickness of the coating.

대표청구항 ▼

1. A substrate processing chamber component comprising: (a) a process chamber component structure composed of a metal alloy; and(b) an yttrium-aluminum coating on the chamber component structure, the yttrium-aluminum coating having a compositional gradient through a thickness of the coating. 2. A component according to claim 1 wherein the chamber component structure and the yttrium-aluminum coating form a unitary and continuous structure. 3. A component according to claim 1 wherein the yttrium-aluminum coating comprises a thickness of from about 0.5 mil to about 8 mils. 4. A component according to claim 1 wherein the yttrium-aluminum coating comprises yttrium-aluminum oxide. 5. A component according to claim 1 wherein the yttrium-aluminum coating comprises YAG. 6. A component according to claim 1 wherein the yttrium-aluminum coating comprises a plasma sprayed coating. 7. A component according to claim 1 wherein the chamber component structure comprises a metal alloy composed of yttrium and aluminum. 8. A component according to claim 1 wherein the chamber component structure comprises an yttrium content of less than about 80% by weight. 9. A component according to claim 1 wherein the chamber component structure comprises a process chamber wall, a portion of an enclosure wall or wall liner, substrate support, substrate transport, gas supply, gas energizer or gas exhaust. 10. A substrate processing chamber component comprising: (a) a process chamber component structure composed of a metal alloy; and(b) a plasma sprayed coating on the chamber component structure, the coating composed of a metal alloy of yttrium and aluminum. 11. A component according to claim 10 wherein the coating comprises a compositional gradient through a thickness of the coating. 12. A component according to claim 10 wherein the coating further comprises yttrium-aluminum oxide. 13. A component according to claim 10 wherein the coating further comprises YAG. 14. A component according to claim 10 wherein the chamber component structure comprises a process chamber wall, a portion of an enclosure wall or wall liner, substrate support, substrate transport, gas supply, gas energizer or gas exhaust. 15. A substrate processing chamber component comprising: (a) a process chamber component structure composed of a metal alloy; and(b) an yttrium-aluminum coating on the chamber component structure, the yttrium-aluminum coating (i) composed of yttrium and aluminum, (ii) having a compositional gradient through a thickness of the coating, and (iii) forming a unitary and continuous structure with the chamber component structure. 16. A component according to claim 15 wherein the yttrium-aluminum coating comprises yttrium-aluminum oxide. 17. A component according to claim 15 wherein the yttrium-aluminum coating comprises a plasma sprayed coating. 18. A substrate processing chamber component comprising: (a) a process chamber component structure composed of a metal alloy; and(b) a plasma sprayed yttrium-aluminum coating on the chamber component structure, the yttrium-aluminum coating having a compositional gradient through a thickness of the coating.

이 특허에 인용된 특허 (90) 인용/피인용 타임라인 분석

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[미국특허] Process chamber component having yttrium—aluminum coating 원문보기

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[미국특허] Process chamber component having yttrium—aluminum coating 원문보기

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