Substrate table, a lithographic apparatus and a device manufacturing method
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G03B-027/52
G03B-027/58
G03F-007/20
출원번호
US-0329971
(2011-12-19)
등록번호
US-9013683
(2015-04-21)
발명자
/ 주소
Ten Kate, Nicolaas
LaFarre, Raymond Wilhelmus Louis
출원인 / 주소
ASML Netherlands B.V.
대리인 / 주소
Pillsbury Winthrop Shaw Pittman LLP
인용정보
피인용 횟수 :
1인용 특허 :
5
초록
A table for a lithographic apparatus, the table having a catchment opening formed in an upper surface of the table, the catchment opening in fluid communication through the table with the environment of the table at a drain opening in a surface of the table other than the upper surface.
대표청구항▼
1. A table for a lithographic apparatus, the table comprising: a catchment opening formed in an upper surface of the table, the catchment opening in fluid communication through the table with the environment of the table at a drain opening in a surface of the table other than the upper surface;a por
1. A table for a lithographic apparatus, the table comprising: a catchment opening formed in an upper surface of the table, the catchment opening in fluid communication through the table with the environment of the table at a drain opening in a surface of the table other than the upper surface;a porous structure in a flow path between the catchment opening and the drain opening, wherein at least part of the flow path is wider than the catchment opening; anda channel arrangement fluidly connecting the porous structure and the drain opening, the channel arrangement comprising a first substantially vertical portion located below the porous structure, a substantially horizontally extending portion connected to the first substantially vertical portion and located below the first substantially vertical portion, and a second substantially vertical portion extending downward from the substantially horizontally extending portion. 2. The table of claim 1, wherein the surface of the table other than the upper surface is an undersurface of the table. 3. The table of claim 1, wherein the maximum radius of the pores in the porous structure is in the range of from about 10 μm to 100 μm. 4. The table of claim 1, further comprising a liquid supply opening, in the flow path below the porous structure, to supply liquid to the flow path. 5. The table of claim 1, wherein the width of the drain opening is greater than or equal to the width of the catchment opening. 6. The table of claim 1, wherein a section of the surface of the table other than the upper surface adjacent the drain opening is coated with a lyophobic coating. 7. The table of claim 1, wherein the drain opening is offset from the catchment opening. 8. The table of claim 1, wherein the drain opening comprises a rim that protrudes from the surface of the table other than the upper surface. 9. The table of claim 8, wherein the rim is coated with a lyophobic coating. 10. The table of claim 1, wherein the catchment opening is radially outward of a substrate supporting area on which a substrate is to be supported. 11. The table of claim 1, comprising a further porous structure in the flow path. 12. The table of claim 1, wherein the channel arrangement further comprises a collector portion below the porous structure and above the first substantially vertical portion, the collector portion configured to collect immersion liquid and being wider than the first substantially vertical portion. 13. The table of claim 1, wherein a surface extending around at least part of the flow path is liquidphobic. 14. A lithographic apparatus, comprising: a projection system configured to project a beam of radiation through a liquid onto a substrate; anda table comprising a catchment opening formed in an upper surface of the table, the catchment opening in fluid communication through the table with the environment of the table at a drain opening in a surface of the table other than the upper surface;a porous structure in a flow path between the catchment opening and the drain opening, wherein at least part of the flow path is wider than the catchment opening; anda channel arrangement fluidly connecting the porous structure and the drain opening, the channel arrangement comprising a first substantially vertical portion located below the porous structure, a substantially horizontally extending portion connected to the first substantially vertical portion and located below the first substantially vertical portion, and a second substantially vertical portion extending downward from the substantially horizontally extending portion. 15. The apparatus of claim 14, further comprising a controller configured to control a supply of liquid to a flow path between the catchment opening and the drain opening such that liquid is supplied to the flow path during at least one selected from: startup of the lithographic apparatus, a substrate swap operation and/or a docking operation of the table to a reference frame of the lithographic apparatus. 16. The apparatus of claim 14, comprising a further porous structure in the flow path. 17. The apparatus of claim 14, wherein the channel arrangement further comprises a collector portion below the porous structure and above the first substantially vertical portion, the collector portion configured to collect immersion liquid and being wider than the first substantially vertical portion. 18. The apparatus of claim 14, wherein a surface extending around at least part of the flow path is liquidphobic. 19. A device manufacturing method, comprising: projecting a patterned beam of radiation through an immersion liquid confined to a space between a projection system and a substrate supported on a substrate table;catching immersion liquid in a catchment opening formed in an upper surface of a table, the catchment opening in fluid communication through the table with the environment of the table at a drain opening in a surface of the table other than the upper surface;passing the immersion liquid through a porous structure in a flow path between the catchment opening and the drain opening, wherein at least part of the flow path is wider than the catchment opening;passing the immersion liquid through a channel arrangement from the porous structure to the drain opening, the channel arrangement comprising a first substantially vertical portion located below the porous structure, a substantially horizontally extending portion connected to the first substantially vertical portion and located below the first substantially vertical portion, and a second substantially vertical portion extending downward from the substantially horizontally extending portion; andextracting immersion liquid at the drain opening. 20. A table for a lithographic apparatus, the table comprising: a catchment opening formed at an upper surface of the table, the catchment opening in fluid communication through the table with the environment of the table at a drain opening in a surface of the table other than the upper surface;a porous structure in a flow path between the catchment opening and the drain opening, wherein at least part of the flow path is wider than the catchment opening and an upper surface of the porous structure is lower than the upper surface of the table; anda rim of the drain opening that protrudes from the surface of the table other than the upper surface.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (5)
Tabarelli Werner (Schlosstr. 5 Vaduz LIX FL-9490) Lbach Ernst W. (Tonagass 374 Eschen LIX FL-9492), Apparatus for the photolithographic manufacture of integrated circuit elements.
Luttikhuis,Bernardus Antonius Johannes; Van Der Pasch,Engelbertus Antonius Fransiscus; Van Der Ham,Ronald; Roset,Niek Jacobus Johannes, Lithographic apparatus and device manufacturing method.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.