[미국특허]
Methods of forming molybdenum sputtering targets
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B22F-003/12
B22F-003/24
B22F-003/20
C22C-027/04
C23C-014/34
B22F-003/16
C22C-001/04
출원번호
US-0849918
(2013-03-25)
등록번호
US-9017600
(2015-04-28)
발명자
/ 주소
Lemon, Brad
Hirt, Joseph
Welling, Timothy
Daily, III, James G.
Meendering, David
Rozak, Gary
O'Grady, Jerome
Kumar, Prabhat
Miller, Steven A.
Wu, Rong-chein Richard
Schwartz, David G.
출원인 / 주소
H.C. Starck Inc.
대리인 / 주소
Morgan, Lewis & Bockius LLP
인용정보
피인용 횟수 :
1인용 특허 :
5
초록▼
In various embodiments, planar sputtering targets are produced by forming a billet at least by pressing molybdenum powder in a mold and sintering the pressed powder, working the billet to form a worked billet, heat treating the worked billet, working the worked billet to form a final billet, and hea
In various embodiments, planar sputtering targets are produced by forming a billet at least by pressing molybdenum powder in a mold and sintering the pressed powder, working the billet to form a worked billet, heat treating the worked billet, working the worked billet to form a final billet, and heat treating the final billet.
대표청구항▼
1. A method of making a planar sputtering target comprising: forming a billet having a diameter D0, the formation comprising pressing molybdenum powder in a mold and sintering the pressed powder;working the billet to form a worked billet having a diameter D2 smaller than D0;heat treating the worked
1. A method of making a planar sputtering target comprising: forming a billet having a diameter D0, the formation comprising pressing molybdenum powder in a mold and sintering the pressed powder;working the billet to form a worked billet having a diameter D2 smaller than D0;heat treating the worked billet;working the worked billet to form a final billet having a diameter Df larger than D2; andheat treating the final billet. 2. The method of claim 1, wherein the powder is pressed at a pressure selected from the range of 200 MPa to 275 MPa. 3. The method of claim 1, wherein the powder is pressed at a pressure of at least 100 MPa. 4. The method of claim 1, wherein pressed powder is sintered at a temperature of at least 1785° C. 5. The method of claim 1, wherein pressed powder is sintered at a temperature selected from the range of 1785° C. to 2200° C. 6. The method of claim 1, wherein a ratio of D0 to D2 is at least 3:1. 7. The method of claim 1, wherein a ratio of D0 to D2 is selected from the range of 3:1 to 5:1. 8. The method of claim 1, wherein the worked billet is heat treated at a temperature selected from the range of 800° C. to 1300° C. 9. The method of claim 1, wherein the powder is pressed isostatically. 10. The method of claim 1, wherein the pressed powder is sintered in hydrogen. 11. The method of claim 1, wherein working the billet comprises extruding the billet. 12. The method of claim 11, wherein the billet is extruded at a temperature of at least 900° C. 13. The method of claim 11, wherein the billet is extruded at a temperature selected from the range of 925° C. to 1260° C. 14. The method of claim 1, wherein working the billet comprises at least one of rotary forging or hammer forging. 15. The method of claim 1, wherein the final billet is substantially recrystallized after heat treating. 16. The method of claim 1, wherein the final billet is substantially free of strain after heat treating. 17. The method of claim 1, wherein the final billet has an equiaxial grain structure after heat treating. 18. The method of claim 1, wherein the final billet is heat treated at a temperature selected from the range of 1200° C. to 1400° C. 19. The method of claim 1, wherein the worked billet is heat treated at a temperature selected from the range of 800° C. to 1000° C. 20. The method of claim 1, wherein working the worked billet comprises upset forging the worked billet. 21. The method of claim 1, wherein working the worked billet comprises hammer forging the worked billet. 22. The method of claim 1, wherein the worked billet is worked at a temperature selected from the range of 800° C. to 1300° C. 23. The method of claim 1, further comprising removing a disc-shaped portion from the final billet. 24. The method of claim 23, wherein the disc-shaped portion is removed from a substantially cylindrical region of the final billet having an approximately constant diameter, the final billet comprising an additional region not having a constant diameter. 25. The method of claim 1, further comprising attaching at least a portion of the final billet to a backing plate. 26. The method of claim 1, further comprising pressing an additional powder with the molybdenum powder, the additional powder comprising at least one of tantalum, niobium, chromium, tungsten, or vanadium. 27. The method of claim 26, wherein an amount of the additional powder, relative to a total amount of molybdenum powder and additional powder, is at least 10 ppm. 28. The method of claim 26, wherein an amount of the additional powder, relative to a total amount of molybdenum powder and additional powder, is approximately 1000 ppm or less.
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이 특허에 인용된 특허 (5)
Lemon, Brad; Hirt, Joseph; Welling, Timothy; Daily, III, James G.; Meendering, David; Rozak, Gary; O'Grady, Jerome; Jepson, Peter R.; Kumar, Prabhat; Miller, Steven A.; Wu, Richard; Schwarz, Davd G., Molybdenum tubular sputtering targets with uniform grain size and texture.
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