In one general aspect, an apparatus can include an overvoltage protection portion, and an overcurrent protection portion operably coupled to the overvoltage protection portion such that heat produced by the overcurrent protection portion at a current below a rated current of the overcurrent protecti
In one general aspect, an apparatus can include an overvoltage protection portion, and an overcurrent protection portion operably coupled to the overvoltage protection portion such that heat produced by the overcurrent protection portion at a current below a rated current of the overcurrent protection portion causes the overvoltage protection portion to change from a voltage regulation state to a shorted state.
대표청구항▼
1. An apparatus, comprising: an overvoltage protection portion, the overvoltage protection portion including a two-terminal diode device; andan overcurrent protection portion operably coupled to the overvoltage protection portion such that heat produced by the overcurrent protection portion at a cur
1. An apparatus, comprising: an overvoltage protection portion, the overvoltage protection portion including a two-terminal diode device; andan overcurrent protection portion operably coupled to the overvoltage protection portion such that heat produced by the overcurrent protection portion at a current below a rated current of the overcurrent protection portion causes the overvoltage protection portion to irreversibly change from a voltage regulation state to a shorted state during a first time period, the current drawn by the overvoltage protection portion causes the overcurrent protection portion to fail open during a second time period after the first time period. 2. The apparatus of claim 1, wherein the overvoltage protection portion and the overcurrent protection portion are integrated into a single, discrete component. 3. The apparatus of claim 1, wherein the heat produced by the overcurrent protection portion at the current below the rated current of the overcurrent protection portion causes a temperature of the overvoltage protection portion to increase until the overvoltage protection portion changes from the voltage regulation state to the shorted state. 4. The apparatus of claim 1, further comprising: an output terminal coupled to the overvoltage protection portion via a conductor having a resistance lower than a resistance of the overcurrent protection portion. 5. The apparatus of claim 1, further comprising: an output terminal coupled to the overvoltage protection portion via a plurality of conductors each having a resistance substantially equal to a resistance of the overcurrent protection portion. 6. The apparatus of claim 1, further comprising: an output terminal; anda conductive clip coupled to the overvoltage protection portion, the overcurrent protection portion, and the output terminal. 7. The apparatus of claim 1, wherein the overvoltage protection portion and the overcurrent protection portion are defined within a common silicon substrate. 8. The apparatus of claim 1, wherein the irreversible change is an irreversible physical change. 9. The apparatus of claim 1, wherein the overvoltage protection portion is at least one of a transient voltage suppression device diode or a zener diode and the overcurrent protection portion is a fuse. 10. The apparatus of claim 1, wherein the overvoltage protection portion is configured to irreversibly change from the voltage regulation state to the shorted state at a voltage across the overvoltage protection portion below a breakdown voltage of the overvoltage protection portion. 11. An apparatus, comprising: an overcurrent protection portion; andan overvoltage protection portion coupled to the overcurrent protection portion such that a thermally triggered irreversible change from a voltage regulation state to a shorted state of the overvoltage protection portion triggers a low conduction state of the overcurrent protection portion, the overvoltage protection portion including a two-terminal diode device,the change of the overvoltage protection portion from the voltage regulation state to the shorted state being triggered by heat produced by the overcurrent protection portion and conductively transferred to the overvoltage protection portion at a current below a rated current of the overcurrent protection portion. 12. The apparatus of claim 11, wherein the thermally triggered change of the overvoltage protection portion triggers the overcurrent protection portion to fail open. 13. The apparatus of claim 11, wherein the overvoltage protection portion is at least one of a transient voltage suppression device diode or a zener diode and the overcurrent protection portion is a fuse. 14. The apparatus of claim 11, wherein the overcurrent protection portion and the overvoltage protection portion are integrated into a single package having an output terminal electrically coupled to the overvoltage protection portion, a ground terminal electrically coupled to the overvoltage protection portion, and an input terminal electrically coupled to the overcurrent protection portion. 15. The apparatus of claim 11, wherein the overvoltage protection portion is integrated within a package with the overcurrent protection portion such that heat is transferred from the overcurrent protection portion to trigger the change of the overvoltage protection portion from the voltage regulation state to the shorted state at the current below the rated current of the overcurrent protection portion within a specified time period. 16. The apparatus of claim 11, further comprising: an output terminal coupled to the overvoltage protection portion via a conductor having a resistance lower than a resistance of the overcurrent protection portion. 17. The apparatus of claim 11, wherein the overcurrent protection portion and the overvoltage protection portion have a common silicon substrate. 18. The apparatus of claim 11, wherein a first terminal of the two-terminal diode device is coupled to the overcurrent protection portion, and a second terminal of the two-terminal diode device is coupled to ground. 19. The apparatus of claim 11, wherein the thermally triggered change is triggered in response to thermal breakdown of the overvoltage protection portion, the overvoltage protection portion is configured such that the thermal breakdown occurs at a critical thermal breakdown temperature lower than a temperature at which the overcurrent protection portion physically changes to an open circuit. 20. The apparatus of claim 11, wherein the overvoltage protection portion is configured to change from the voltage regulation state to the shorted state at a voltage across the overvoltage protection portion below a breakdown voltage of the overvoltage protection portion. 21. A method, comprising: receiving an overvoltage protection portion having a substrate, the overvoltage protection portion including a two-terminal diode device;disposing the overvoltage protection portion into a container, the overvoltage protection portion being electrically and thermally coupled to an overcurrent protection portion disposed within the container; andinserting a molding into the container around the overvoltage protection portion and the overcurrent protection portion, the molding being a thermally conductive material configured to transfer heat produced by the overcurrent protection portion at a current below a rated current of the overcurrent protection portion to the overvoltage protection portion such that the overvoltage protection portion irreversibly fails short during a first time period and the current drawn by the overvoltage protection portion during the first time period causes the overcurrent protection portion to fail open during a second time period after the first time period. 22. The method of claim 21, further comprising: disposing a metal on the substrate to define the overcurrent protection portion. 23. The method of claim 21, further comprising: inserting the overcurrent protection portion into the container, the overcurrent protection portion being coupled to the overvoltage protection portion after the inserting of the overvoltage protection portion into the container. 24. The method of claim 21, wherein the overvoltage protection portion is configured to irreversibly fail short at a voltage across the overvoltage protection portion below a threshold voltage of the overvoltage protection portion.
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이 특허에 인용된 특허 (24)
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