Porous ULK film is cured with UV radiation at progressively shorter wavelengths to obtain ULK films quickly at a desired dielectric constant with improved mechanical properties. At longer wavelengths above about 220 nm or about 240 nm, porogen is removed while minimizing silicon-carbon bond formatio
Porous ULK film is cured with UV radiation at progressively shorter wavelengths to obtain ULK films quickly at a desired dielectric constant with improved mechanical properties. At longer wavelengths above about 220 nm or about 240 nm, porogen is removed while minimizing silicon-carbon bond formation. At shorter wavelengths, mechanical properties are improved while dielectric constant increases.
대표청구항▼
1. A method of UV curing a dielectric film on a substrate, the method comprising: (a) exposing the dielectric film on the substrate to first UV radiation having a first wavelength or first wavelength range, said first wavelength or first wavelength range including only wavelengths longer than about
1. A method of UV curing a dielectric film on a substrate, the method comprising: (a) exposing the dielectric film on the substrate to first UV radiation having a first wavelength or first wavelength range, said first wavelength or first wavelength range including only wavelengths longer than about 220 nm, until porogens in the dielectric film are removed, thus reducing a dielectric constant of the dielectric film, and then further exposing the dielectric film to the first UV radiation after the porogens are removed to further reduce the dielectric constant of the dielectric film; and(b) after (a) exposing the dielectric film to second UV radiation having a second wavelength or second wavelength range, said second wavelength or second wavelength range including only wavelengths of 185 nm or longer, until a desired film material property is reached, wherein the second wavelength or lowest wavelength of the second wavelength range is lower than the first wavelength or lowest wavelength of the first wavelength range. 2. The method of claim 1, wherein the desired film material property is hardness. 3. The method of claim 1, wherein the desired film material property is elastic modulus. 4. The method of claim 1, wherein the desired film material property is fracture resistance. 5. The method of claim 1, wherein the exposure to the first UV radiation promotes porogen outgassing and, during and after porogen outgassing, linking of silicon and oxygen atoms in the dielectric film. 6. The method of claim 1, wherein the exposure to the second UV radiation promotes linking of silicon and carbon atoms in the dielectric film. 7. The method of claim 1, where a temperature of the substrate during the first UV radiation exposure is higher than a corresponding temperature of the substrate during the second UV radiation exposure. 8. The method of claim 1, wherein the exposure to the first UV radiation and the second UV radiation occur in the same chamber. 9. The method of claim 8, wherein the exposure to the first UV radiation and the second UV radiation occur at a same substrate exposure area. 10. The method of claim 8, wherein the exposure to the first UV radiation and the second UV radiation occur at different substrate exposure areas. 11. The method of claim 1, wherein the first wavelength range is 220 nm to 280 nm. 12. The method of claim 1, wherein the first UV radiation has only wavelengths longer than about 240 nm. 13. The method of claim 1, wherein the exposure to the first UV radiation occurs at a substrate temperature of 400° C. or higher. 14. The method of claim 1, wherein the first wavelength range is between about 250 nm to 270 nm and the second wavelength range is between about 225 and 240 nm. 15. The method of claim 1, wherein the dielectric constant of the dielectric film starts to increase when dielectric constant-lowering reactions are outweighed by dielectric constant-raising reactions. 16. The method of claim 15, wherein the dielectric constant-lowering reactions are silicon-oxygen crosslinking reactions and the dielectric constant-raising reactions are silicon-carbon crosslinking reactions. 17. A method of UV curing a dielectric film on a substrate, the method comprising: (a) exposing the dielectric film for a first duration to first UV radiation to thereby outgas porogens from the dielectric film and thereby lower a dielectric constant of the dielectric film and, during and after the porogen outgassing, link silicon-oxygen bonds to further lower the dielectric constant of the dielectric film; and(b) exposing the dielectric film for a second duration to second UV radiation to thereby link silicon-carbon bonds within the dielectric film, wherein the UV radiation in each exposure operation has a wavelength or a wavelength range and wherein the wavelength or lower limit of the wavelength range is decreased with successive exposures. 18. The method of claim 17, where a temperature of the substrate during the first UV radiation exposure is equal to or higher than a corresponding temperature of the substrate during the second UV radiation exposure. 19. The method of claim 17, wherein the first UV radiation exposure occurs at a substrate temperature of 400° C. or higher. 20. The method of claim 17, wherein the first UV radiation has a wavelength range of between about 250 nm and 270 nm, and wherein the second UV radiation has a wavelength range of between about 225 nm and 240 nm. 21. A method of determining UV curing parameters for a dielectric film, the method comprising: (a) depositing the dielectric film on a plurality of substrates;(b) exposing each substrate to first UV radiation having only wavelengths longer than about 220 nm for different durations from 1 minute to 20 minutes, wherein the duration of at least one of the first UV radiation exposures is long enough that (i) a dielectric constant of the dielectric film of at least one of the substrates is decreased by removing porogens in the dielectric film and (ii) there is a further decrease in the dielectric constant of the dielectric film after the porogens are removed;(c) measuring a dielectric constant and hardness for each substrate;(d) determining a first duration for a minimum dielectric constant;(e) exposing the plurality of substrates to second UV radiation having only wavelengths of 185 nm or longer for different durations from 1 minute to 20 minutes;(f) measuring the dielectric constant and hardness for each of the substrates; and(g) determining a second duration at which at least one parameter is reached, the at least one parameter selected from the group consisting of: a target k value and a minimum hardness, wherein the UV radiation in each exposure operation (b) and (e) has a wavelength or a wavelength range and wherein the wavelength or lower limit of the wavelength range is decreased with successive exposures. 22. The method of claim 21, wherein the exposure to the first UV radiation operation occurs at a substrate temperature of 400° C. or higher. 23. The method of claim 21, wherein the UV radiation wavelength in the first exposure operation (b) is longer than about 240 nm. 24. A method of UV curing a dielectric film on a substrate, the method comprising: (a) exposing the dielectric film to first UV radiation having only wavelengths longer than about 220 nm until porogens in the dielectric film are removed, thus lowering the dielectric constant of the dielectric film, and then further exposing the dielectric film to the first UV radiation after the porogens are removed to further lower the dielectric constant of the film; and(b), after (a), exposing the film to second UV radiation comprising wavelengths of less than 200 nm until a desirable material property is reached, wherein a total exposure time needed to perform (a) and (b) is shorter than an exposure time needed for UV curing to the desirable material property with a constant radiation spectrum. 25. The method of claim 24, where a substrate temperature during the first UV radiation exposure is equal to or higher than a substrate temperature during the second UV radiation exposure.
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