Effects of methods of manufacturing sputtering targets on characteristics of coatings
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23C-014/34
C03C-017/22
C03C-017/27
C03C-017/36
C23C-014/06
C23C-014/08
C23C-014/18
C03C-017/09
출원번호
US-0112535
(2005-04-22)
등록번호
US-9051211
(2015-06-09)
발명자
/ 주소
Finley, James J.
Buhay, Harry
출원인 / 주소
PPG industries Ohio, Inc.
대리인 / 주소
Siminerio, Andrew C.
인용정보
피인용 횟수 :
0인용 특허 :
52
초록▼
Titanium and aluminum cathode targets are disclosed for sputtering absorbing coatings of titanium and aluminum-containing materials in atmospheres comprising inert gas, reactive gases such as nitrogen, oxygen, and mixtures thereof, which can further comprise inert gas, such as argon, to form nitride
Titanium and aluminum cathode targets are disclosed for sputtering absorbing coatings of titanium and aluminum-containing materials in atmospheres comprising inert gas, reactive gases such as nitrogen, oxygen, and mixtures thereof, which can further comprise inert gas, such as argon, to form nitrides, oxides, and oxynitrides, as well as metallic films. The titanium and aluminum-containing coatings can be utilized as an outer coat or as one or more coating layers of a coating stack.
대표청구항▼
1. A method for depositing a transparent, multilayer, low emissivity coating, comprising: maintaining a transparent glass substrate in a chamber, wherein the substrate is larger than at least one square foot; andforming a transparent, low emissivity coating stack over at least a portion of the subst
1. A method for depositing a transparent, multilayer, low emissivity coating, comprising: maintaining a transparent glass substrate in a chamber, wherein the substrate is larger than at least one square foot; andforming a transparent, low emissivity coating stack over at least a portion of the substrate, wherein the coating stack comprises at least one dielectric layer, at least one infrared reflecting metal layer, and at least one sacrificial primer layer, wherein the at least one infrared reflecting metal layer is located between the at least one dielectric layer and the substrate, wherein the at least one dielectric layer is selected from the group consisting of oxides, nitrides, and oxynitrides; wherein the at least one sacrificial primer layer is located between the at least one infrared reflecting metal layer and the at least one dielectric layer;wherein the at least one sacrificial primer layer has a varying composition versus depth, and is formed by: sputtering at least one cathode having a predefined mixture of aluminum to titanium, said cathode containing from 40 to 60 weight percent of aluminum; andreciprocally moving the substrate with respect to the cathode. 2. The method according to claim 1, including passing the substrate under the cathode and varying the speed of the substrate during coating. 3. The method according to claim 1 further comprising a second sacrificial primer layer between the at least one infrared reflecting metal layer and the substrate. 4. The method of claim 1, wherein said cathode contains about 50 weight percent of aluminum, and at least one of the dielectric layer, the primer layer, and the outer protective layer includes aluminum and titanium, with about 50 atomic percent of aluminum being present. 5. The method according to claim 1 further comprises varying the gas pressure during formation of the primer layer.
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