Method for manufacturing SOI substrate and method for manufacturing semiconductor device
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/30
H01L-021/762
H01L-027/12
H01L-029/66
출원번호
US-0076994
(2008-03-26)
등록번호
US-9059247
(2015-06-16)
우선권정보
JP-2007-133546 (2007-05-18)
발명자
/ 주소
Yamazaki, Shunpei
Ohnuma, Hideto
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson, Eric J.
인용정보
피인용 횟수 :
1인용 특허 :
31
초록▼
A method for manufacturing an SOI substrate with favorable adherence without high-temperature heat treatment being performed in bonding, and a semiconductor device using the SOI substrate and a manufacturing method thereof are proposed. An SOI substrate and a semiconductor device can be manufactured
A method for manufacturing an SOI substrate with favorable adherence without high-temperature heat treatment being performed in bonding, and a semiconductor device using the SOI substrate and a manufacturing method thereof are proposed. An SOI substrate and a semiconductor device can be manufactured by forming a single-crystalline silicon substrate with a thickness of 50 μm or less in which a brittle layer is formed; forming a supporting substrate having an insulating layer over a surface; activating at least one of the surfaces of the single-crystalline silicon substrate and the insulating layer by exposure to a plasma atmosphere or an ion atmosphere; and bonding the single-crystalline silicon substrate and the supporting substrate with the insulating layer interposed therebetween.
대표청구항▼
1. A method for manufacturing an SOI substrate, comprising the steps of: forming a brittle layer in a single-crystalline semiconductor substrate so that a single-crystalline semiconductor layer is provided on the brittle layer;forming a cap layer over the single-crystalline semiconductor layer;bondi
1. A method for manufacturing an SOI substrate, comprising the steps of: forming a brittle layer in a single-crystalline semiconductor substrate so that a single-crystalline semiconductor layer is provided on the brittle layer;forming a cap layer over the single-crystalline semiconductor layer;bonding the single-crystalline semiconductor layer and a supporting substrate to each other with the cap layer interposed therebetween; andseparating the single-crystalline semiconductor layer from the single-crystalline semiconductor substrate at the brittle layer so that the single-crystalline semiconductor layer is formed over the supporting substrate with the cap layer interposed therebetween,wherein a thickness from a top surface to a bottom surface of the single-crystalline semiconductor substrate is 50 μm or less, andwherein the top surface and the bottom surface of the single-crystalline semiconductor substrate are exposed to air. 2. The method for manufacturing an SOI substrate according to claim 1, wherein the brittle layer is formed by irradiation with hydrogen or a rare gas using an ion doping method or an ion implantation method. 3. The method for manufacturing an SOI substrate according to claim 1, wherein the cap layer is a nitrogen-containing insulating layer or a silicon oxide layer. 4. The method for manufacturing an SOI substrate according to claim 1, wherein the supporting substrate is a plastic substrate. 5. The method for manufacturing an SOI substrate according to claim 1, further comprising a step of polishing a surface of the single-crystalline semiconductor layer after the separating step. 6. The method for manufacturing an SOI substrate according to claim 1, wherein the single-crystalline semiconductor layer has a thickness of 10-200 nm. 7. A method for manufacturing a semiconductor device, comprising the steps of: forming a brittle layer in a single-crystalline semiconductor substrate so that a single-crystalline semiconductor layer is provided on the brittle layer;forming a cap layer over the single-crystalline semiconductor layer;bonding the single-crystalline semiconductor layer and a supporting substrate to each other with the cap layer interposed therebetween; andseparating the single-crystalline semiconductor layer from the single-crystalline semiconductor substrate at the brittle layer so that the single-crystalline semiconductor layer is formed over the supporting substrate with the cap layer interposed therebetween;forming a gate insulating layer over the single-crystalline semiconductor layer;forming a gate electrode over the gate insulating layer;introducing an impurity to the single-crystalline semiconductor layer using the gate electrode as a mask;forming an interlayer insulating layer over the gate electrode;forming a contact hole which reaches the single-crystalline semiconductor layer in the interlayer insulating layer; andforming a conductive layer electrically connected to the single-crystalline semiconductor layer through the contact hole over the interlayer insulating layer,wherein a thickness from a top surface to a bottom surface of the single-crystalline semiconductor substrate is 50 μm or less, andwherein the top surface and the bottom surface of the single-crystalline semiconductor substrate are exposed to air. 8. The method for manufacturing a semiconductor device according to claim 7, wherein the brittle layer is formed by irradiation with hydrogen or a rare gas using an ion doping method or an ion implantation method. 9. The method for manufacturing a semiconductor device according to claim 7, wherein the cap layer is a nitrogen-containing insulating layer or a silicon oxide layer. 10. The method for manufacturing a semiconductor device according to claim 7, wherein the supporting substrate is a plastic substrate. 11. The method for manufacturing a semiconductor device according to claim 7, further comprising a step of polishing a surface of the single-crystalline semiconductor layer after the separating step. 12. The method for manufacturing a semiconductor device according to claim 7, wherein the single-crystalline semiconductor layer has a thickness of 10-200 nm. 13. A method for manufacturing an SOI substrate, comprising the steps of: forming a brittle layer in a single-crystalline semiconductor substrate so that a single-crystalline semiconductor layer is provided on the brittle layer;forming a cap layer over the single-crystalline semiconductor layer;forming a bonding layer over the cap layer;bonding the single-crystalline semiconductor layer and a supporting substrate to each other with the cap layer and the bonding layer interposed therebetween; andseparating the single-crystalline semiconductor layer from the single-crystalline semiconductor substrate at the brittle layer so that the single-crystalline semiconductor layer is formed over the supporting substrate with the cap layer and the bonding layer interposed therebetween,wherein a thickness from a top surface to a bottom surface of the single-crystalline semiconductor substrate is 50 μm or less, andwherein the top surface and the bottom surface of the single-crystalline semiconductor substrate are exposed to air. 14. The method for manufacturing an SOI substrate according to claim 13, wherein the brittle layer is formed by irradiation with hydrogen or a rare gas using an ion doping method or an ion implantation method. 15. The method for manufacturing an SOI substrate according to claim 13, wherein the cap layer is a nitrogen-containing insulating layer or a silicon oxide layer. 16. The method for manufacturing an SOI substrate according to claim 13, wherein the cap layer is thicker than the bonding layer. 17. The method for manufacturing an SOI substrate according to claim 13, wherein the supporting substrate is a plastic substrate. 18. The method for manufacturing an SOI substrate according to claim 13, further comprising a step of polishing a surface of the single-crystalline semiconductor layer after the separating step. 19. The method for manufacturing an SOI substrate according to claim 13, wherein the single-crystalline semiconductor layer has a thickness of 10-200 nm. 20. A method for manufacturing a semiconductor device, comprising the steps of: forming a brittle layer in a single-crystalline semiconductor substrate so that a single-crystalline semiconductor layer is provided on the brittle layer;forming a cap layer over the single-crystalline semiconductor layer;forming a bonding layer over the cap layer;bonding the single-crystalline semiconductor layer and a supporting substrate to each other with the cap layer and the bonding layer interposed therebetween; andseparating the single-crystalline semiconductor layer from the single-crystalline semiconductor substrate at the brittle layer so that the single-crystalline semiconductor layer is formed over the supporting substrate with the cap layer and the bonding layer interposed therebetween;forming a gate insulating layer over the single-crystalline semiconductor layer;forming a gate electrode over the gate insulating layer;introducing an impurity to the single-crystalline semiconductor layer using the gate electrode as a mask;forming an interlayer insulating layer over the gate electrode;forming a contact hole which reaches the single-crystalline semiconductor layer in the interlayer insulating layer; andforming a conductive layer electrically connected to the single-crystalline semiconductor layer through the contact hole over the interlayer insulating layer,wherein a thickness from a top surface to a bottom surface of the single-crystalline semiconductor substrate is 50 μm or less, andwherein the top surface and the bottom surface of the single-crystalline semiconductor substrate are exposed to air. 21. The method for manufacturing a semiconductor device according to claim 20, wherein the brittle layer is formed by irradiation with hydrogen or a rare gas using an ion doping method or an ion implantation method. 22. The method for manufacturing a semiconductor device according to claim 20, wherein the cap layer is a nitrogen-containing insulating layer or a silicon oxide layer. 23. The method for manufacturing a semiconductor device according to claim 20, wherein the cap layer is thicker than the bonding layer. 24. The method for manufacturing a semiconductor device according to claim 20, wherein the supporting substrate is a plastic substrate. 25. The method for manufacturing a semiconductor device according to claim 20, further comprising a step of polishing a surface of the single-crystalline semiconductor layer after the separating step. 26. The method for manufacturing a semiconductor device according to claim 20, wherein the single-crystalline semiconductor layer has a thickness of 10-200 nm.
Bernard Aspar FR; Michel Bruel FR; Thierry Barge FR, Method for making a thin film on a support and resulting structure including an additional thinning stage before heat treatment causes micro-cavities to separate substrate element.
Hiroji Aga JP; Naoto Tate JP; Kiyoshi Mitani JP, Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method.
Yasukawa, Masahiro, SOI SUBSTRATE, ELEMENT SUBSTRATE, SEMICONDUCTOR DEVICE, ELECTRO-OPTICAL APPARATUS, ELECTRONIC EQUIPMENT, METHOD OF MANUFACTURING THE SOI SUBSTRATE, METHOD OF MANUFACTURING THE ELEMENT SUBSTRATE, AND .
Yasukawa,Masahiro, SOI substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the SOI substrate, method of manufacturing the element substrate, and .
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