A module for separating oxygen from an oxygen-containing gaseous mixture comprising planar solid-state membrane units, each membrane unit comprising planar dense mixed conducting oxides layers, planar channel-free porous support layers, and one or more planar intermediate support layers comprising a
A module for separating oxygen from an oxygen-containing gaseous mixture comprising planar solid-state membrane units, each membrane unit comprising planar dense mixed conducting oxides layers, planar channel-free porous support layers, and one or more planar intermediate support layers comprising at least one channeled porous support layer. The porosity of the planar channeled porous support layers is less than the porosity of the planar channel-free porous support layers.
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1. A module for separating oxygen from an oxygen-containing gaseous mixture, the module comprising a plurality of planar solid-state membrane units, each planar solid-state membrane unit comprising: a first planar dense mixed conducting oxide layer having no connected-through porosity, the first pla
1. A module for separating oxygen from an oxygen-containing gaseous mixture, the module comprising a plurality of planar solid-state membrane units, each planar solid-state membrane unit comprising: a first planar dense mixed conducting oxide layer having no connected-through porosity, the first planar dense mixed conducting oxide layer having a first face and a second face, the second face opposite the first face;a first planar channel-free porous support layer having connected-through porosity, the first planar channel-free porous support having a first face and a second face, the second face opposite the first face, the first face of the first planar channel-free porous support layer contiguous with the second face of the first planar dense mixed conducting oxide layer;a first planar channeled porous support layer having connected-through porosity, the first planar channeled porous support layer having a first face and a second face, the second face opposite the first face, the first face of the first planar channeled porous support layer contiguous with the second face of the first planar channel-free porous support layer;a second planar dense mixed conducting oxide layer having no connected-through porosity, the second planar dense mixed conducting oxide layer having a first face and a second face, the second face opposite the first face;a second planar channel-free porous support layer having connected-through porosity, the second planar channel-free porous support having a first face and a second face, the second face opposite the first face, the first face of the second planar channel-free porous support layer contiguous with the second face of the second planar dense mixed conducting oxide layer; andan outer rim circumscribing the first planar dense mixed conducting oxide layer, the second planar dense mixed conducting oxide layer, the first planar channel-free porous support layer, the second planar channel-free porous support layer, and the first planar channeled porous support layer, the outer rim comprising a dense mixed conducting oxide layer having no connected-through porosity, wherein the dense mixed conducting oxide layer of the outer rim connects the first planar dense mixed conducting oxide layer to the second planar dense mixed conducting oxide layer;wherein the porosity of the first planar channeled porous support layer is less than the porosity of the first planar channel-free porous support layer. 2. The module of claim 1 wherein the porosity of the first planar channeled porous support layer is between 1% and 45% and the porosity of the first planar channel-free porous support layer is between 10% and 50%. 3. The module of claim 1 further comprising: a second planar channeled porous support layer having connected-through porosity, the second planar channeled porous support layer having a first face and a second face, the second face opposite the first face, the first face of the second planar channeled porous support layer contiguous with the second face of the second planar channel-free porous support layer;wherein the porosity of the second planar channeled porous support layer is less than the porosity of the second planar channel-free porous support layer. 4. The module of claim 3 wherein the porosity of the second planar channeled porous support layer is between 1% and 45% and the porosity of the second planar channel-free porous support layer is between 10% and 50%. 5. The module of claim 3 further comprising: one or more planar intermediate support layers, the one or more intermediate support layers interlaying the second face of the first planar channeled porous support layer and the second face of the second planar channeled porous support layer. 6. The module of claim 5 wherein the outer rim further comprises a channel-free porous support layer having connected-through porosity contiguous with the dense mixed conducting oxide layer of the outer rim wherein the channel-free porous support layer of the outer rim separates the dense mixed conducting oxide layer of the outer rim from the first planar channeled porous support layer, the second planar channeled porous support layer, and the one or more planar intermediate support layers. 7. The module of claim 1 wherein the outer rim further comprises a channel-free porous support layer having connected-through porosity contiguous with the dense mixed conducting oxide layer of the outer rim wherein the channel-free porous support layer of the outer rim separates the dense mixed conducting oxide layer of the outer rim from the first planar channeled porous support layer. 8. The module of claim 1 wherein each of the first planar dense mixed conducting oxide layer, the second planar dense mixed conducting oxide layer, the first planar channel-free porous support layer, the second planar channel-free porous support layer, the first planar channeled porous support layer, a second planar channeled porous support layer, if present, one or more planar intermediate support layers, if present, the dense mixed conducting oxide layer of the outer rim, and a channel-free porous support layer of the outer rim, if present, comprise a mixed conducting metal oxide material, each of the mixed conducting metal oxide materials having the general stoichiometric composition (Ln1-xAx)w(B1-yB′y)O3-δ, wherein Ln represents one or more elements selected from La, the D block lanthanides of the IUPAC periodic table, and Y; wherein A represents one or more elements selected from Mg, Ca, Sr and Ba; wherein B and B′ each represent one or more elements selected from Sc, Ti, V, Mn, Fe, Co, Ni, Cu, Cr, Al, Zr, Mg, and Ga; wherein 0≦x≦1, 0≦y≦1, and 0.95
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