초록 ▼

A process for the recovery of silicon includes providing silicon-containing solids recovered from a silicon manufacturing process, said recovered silicon-containing solids being substantially free of semiconductor dopants; converting the recovered silicon-containing solids into gaseous silicon forms

A process for the recovery of silicon includes providing silicon-containing solids recovered from a silicon manufacturing process, said recovered silicon-containing solids being substantially free of semiconductor dopants; converting the recovered silicon-containing solids into gaseous silicon forms; subjecting to purification by minimal distillation; collecting the gaseous silicon forms as a condensed liquid of silicon-containing compounds; and utilizing the silicon-containing compounds for silicon deposition.

대표청구항 ▼

1. A method of processing silicon-containing powder recovered from a silicon manufacturing process, the method consisting essentially of: providing a high purity silicon powder recovered from a silicon manufacturing process-wherein said recovered high purity silicon powder has at least 99.999 wt % p

1. A method of processing silicon-containing powder recovered from a silicon manufacturing process, the method consisting essentially of: providing a high purity silicon powder recovered from a silicon manufacturing process-wherein said recovered high purity silicon powder has at least 99.999 wt % purity, less than 10 ppm metallic impurities, and has mean particle size of about 1-10 microns; converting the high purity silicon powder into trichlorosilane by a hydrochlorination reaction of said high purity silicon at a temperature of 200-250° C. by continuously providing a feed of a mixture of hydrogen chloride and hydrogen gases; andseparating the nonvolatile metal chlorides and process HCl and H2 gases; andperforming no more than one distillation-purification step on the trichlorosilane prior to converting the trichlorosilane to solar grade silicon and performing at least one or no more than two distillation-purification steps on the trichlorosilane prior to converting the trichlorosilane to electronic grade silicon. 2. The method according to claim 1, wherein the non-volatile metal chlorides are separated in a filter bed. 3. The method according to claim 1, wherein the trichlorosilane is purified by one or two distillation processes to remove volatile impurities. 4. The method of claim 3, wherein the one or two distillation processes to remove volatile impurities comprises separation of trichlorosilane from dichlorosilane and tetrachlorosilane. 5. The method of claim 1, wherein the trichlorosilane purified using one or two distillation processes is decomposed in a silicon deposition process to deposit polysilicon or a silicon thin film. 6. The method of claim 1, wherein the high purity silicon powder is a waste silicon byproduct of the silicon granule manufacturing process in fluid bed reactors or crushing high purity silicon chunks. 7. The method according to claim 1, wherein said converting high purity silicon powder into trichlorosilane is performed primarily in a bed reactor.