초록 ▼

Contacts for semiconductor devices and methods of making thereof are disclosed. A method comprises forming a first layer on a semiconductor, the first layer comprising one or more metals; forming a second layer on the first layer, the second layer comprising the one or more metals, nitrogen and oxyg

Contacts for semiconductor devices and methods of making thereof are disclosed. A method comprises forming a first layer on a semiconductor, the first layer comprising one or more metals; forming a second layer on the first layer, the second layer comprising the one or more metals, nitrogen and oxygen; and heating the first and second layer such that oxygen migrates from the second layer into the first layer and the first layer comprises a sub-stoichiometric metal oxide after heating. Exemplary embodiments use transition metals such as Ti in the first layer. After heating there is a sub-stoichiometric oxide layer of about 2.5 nm thickness between a metal nitride conductor and the semiconductor. The specific contact resistivity is less than about 7×10−9 Ω·cm2.

대표청구항 ▼

1. A method of fabricating a semiconductor device, the method comprising forming a first layer on a semiconductor, wherein the semiconductor comprises a III-V semiconductor, the first layer comprising one or more metals;forming a second layer on the first layer, the second layer comprising the one o

1. A method of fabricating a semiconductor device, the method comprising forming a first layer on a semiconductor, wherein the semiconductor comprises a III-V semiconductor, the first layer comprising one or more metals;forming a second layer on the first layer, the second layer comprising the one or more metals, nitrogen and oxygen; andheating the first and second layer, such that the first layer comprises a sub-stoichiometric metal oxide. 2. The method of claim 1, wherein the one or more metals comprise titanium or zinc. 3. The method of claim 1, wherein the heating is performed in an oxygen-free atmosphere. 4. The method of claim 1, wherein the ratio of oxygen atoms to nitrogen atoms in the second layer is about 1:10 prior to the heating step. 5. The method of claim 1, wherein the thickness of the first layer prior to the heating step is between about 1 nm and about 3 nm. 6. The method of claim 1, wherein the thickness of the first layer prior to the heating step is about 2.5 nm. 7. The method of claim 1, wherein the thickness of the second layer prior to the heating step is between about 2 nm and about 5 nm. 8. The method of claim 1, wherein the first and second layers are formed by physical vapor deposition, atomic layer deposition, chemical vapor deposition, or plasma enhanced variations thereof.