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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0972704 (2013-08-21) |
등록번호 | US-9114438 (2015-08-25) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 90 인용 특허 : 432 |
Methods of removing copper residue from interior surfaces of an etch process chamber are described. A plasma treatment using halogen-containing precursors transforms the copper residue into halogen-copper complexes. Plasma-excited inert gases are used to desorb the halogen-copper complexes. In this
Methods of removing copper residue from interior surfaces of an etch process chamber are described. A plasma treatment using halogen-containing precursors transforms the copper residue into halogen-copper complexes. Plasma-excited inert gases are used to desorb the halogen-copper complexes. In this way, the copper residue is removed from the interior surfaces of the etch process chamber.
1. A method of cleaning a dielectric window comprising: flowing a halogen-containing precursor into a substrate processing region while forming a first local plasma in the substrate processing region having a first local plasma power to form excited halogen-containing species, wherein a copper resid
1. A method of cleaning a dielectric window comprising: flowing a halogen-containing precursor into a substrate processing region while forming a first local plasma in the substrate processing region having a first local plasma power to form excited halogen-containing species, wherein a copper residue on interior surfaces of the dielectric window is transformed into a copper halogen layer on the dielectric window;flowing an inert gas into the substrate processing region while forming a second local plasma in the substrate processing region having a second local plasma power, wherein the copper halogen layer is desorbed as desorbed species from the dielectric window and wherein the second local plasma occurs after the first local plasma, wherein the substrate processing region is devoid of halogens during the second local plasma aside from the desorbed species. 2. The method of claim 1 wherein the desorbed species of the copper halogen layer are exhausted from the substrate processing region during or after the second local plasma. 3. The method of claim 1 wherein the halogen-containing precursor comprises chlorine. 4. The method of claim 1 wherein the halogen-containing precursor comprises at least one of bromine or iodine. 5. The method of claim 1 wherein the inert gas comprises helium. 6. The method of claim 1 wherein the substrate processing region consists essentially of one or more of hydrogen, the inert gas, and the desorbed species during the second local plasma. 7. The method of claim 1 wherein the substrate processing region consists essentially of the inert gas and the desorbed species during the second local plasma. 8. The method of claim 1 wherein the first local plasma and the second local plasma are each attained using inductively-coupled power. 9. The method of claim 1 wherein the first local plasma power is between about 50 watts and about 2500 watts. 10. The method of claim 1 wherein the second local plasma power is between about 100 watts and about 5000 watts. 11. The method of claim 1 wherein a pressure within the substrate processing region is between about 0.5 mTorr and about 500 mTorr during the first local plasma. 12. The method of claim 1 wherein a pressure within the substrate processing region is between about 0.5 mTorr and about 500 mTorr during the second local plasma. 13. A method of cleaning a dielectric window comprising: flowing a halogen-free precursor into a substrate processing region while forming a subtractive etch local plasma in the substrate processing region having a subtractive etch local plasma power to form excited halogen-free species, wherein the subtractive etch local plasma etches copper from a substrate and leaves a copper residue on the interior surfaces of the dielectric window;removing the substrate from the substrate processing region;flowing a halogen-containing precursor into the substrate processing region while forming a halogen local plasma in the substrate processing region having a halogen local plasma power to form excited halogen-containing species, wherein the halogen local plasma transforms a copper residue on the interior surfaces of the dielectric window into a copper halogen layer; andflowing an inert gas into the substrate processing region while forming an inert gas local plasma in the substrate processing region having an inert gas local plasma power, wherein the copper halogen layer is desorbed as desorbed species from the dielectric window and wherein the inert gas local plasma occurs after the halogen local plasma, wherein the substrate processing region is devoid of halogens during the inert as local plasma aside from the desorbed species.
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