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| 국가/구분 | United States(US) Patent 등록 |
|---|---|
| 국제특허분류(IPC7판) |
|
| 출원번호 | US-0234751 (2011-09-16) |
| 등록번호 | US-9114482 (2015-08-25) |
| 발명자 / 주소 |
|
| 출원인 / 주소 |
|
| 대리인 / 주소 |
|
| 인용정보 | 피인용 횟수 : 0 인용 특허 : 290 |
Systems and methods for laser based processing of layered materials. Methods may include selectively adjusting ultrafast laser output of an ultrafast laser device based upon one or more physical attributes of a layer of the layered material, applying the ultrafast laser output of the ultrafast laser
Systems and methods for laser based processing of layered materials. Methods may include selectively adjusting ultrafast laser output of an ultrafast laser device based upon one or more physical attributes of a layer of the layered material, applying the ultrafast laser output of the ultrafast laser device to the layer of the layered material along a tool path to ablate the layer along the tool path, and then re-executing the steps to ablate one or more additional layers, the re-execution occurring for each distinct layer of the layered material that is to be ablated.
1. A method for selectively ablating one or more layers of a layered material, the method comprising: (a) using a sensing device to determine one or more physical attributes of a layer of the layered material and selectively adjusting ultrafast laser output of an ultrafast laser device before an app
1. A method for selectively ablating one or more layers of a layered material, the method comprising: (a) using a sensing device to determine one or more physical attributes of a layer of the layered material and selectively adjusting ultrafast laser output of an ultrafast laser device before an application of the ultrafast laser output based upon the one or more physical attributes of the layer of the layered material;(b) applying the ultrafast laser output of the ultrafast laser device to the layer of the layered material along a tool path to ablate the layer along the tool path;(c) re-executing steps (a) and (b) to ablate one or more additional layers, the re-execution of steps (a) and (b) occurring for each distinct layer of the layered material that is to be ablated; wherein the selective ablation of the layered material prepares the layered material for subsequent processing, wherein applying the ultrafast laser output to the one or more additional layers occurs substantially simultaneously relative to the applying ultrafast laser output to a getter layer, wherein the additional layer being disposed below an ablated portion of the getter layer. 2. The method according to claim 1, wherein selectively adjusting ultrafast laser output includes any selectively adjusting one or more of tool path pattern, pulse width, pulse energy level, focal point, frequency, laser repetition rate, laser beams fill spacing, number of passes, and combinations thereof, for the ultrafast laser device. 3. The method according to claim 2, wherein the pulse width is selected from any of a femtosecond, a picosecond, nanosecond, and combinations thereof. 4. The method according to claim 1, wherein the layered material includes a base layer, one or more device layers layered upon the base layer, and a getter layer covering an uppermost device layer of the one or more device layers. 5. The method according to claim 4, wherein the base layer includes any of an organic and an inorganic material. 6. The method according to claim 4, wherein subsequent processing includes any of dry etching, wet etching, plasma etching, cleaving, optical lithography, cleaning, texturing, and combinations thereof. 7. The method according to claim 4, wherein the getter layer is comprised of any of a metallic alloy and a polymer. 8. A method of operating an ultrafast laser device to process layers of a layered material, the method comprising: (a) using a laser controller application to control a selectively adjustable ultrafast laser output wherein the laser controller application is executed by a control module and an analysis module; wherein using the laser controller application comprises: (i) selectively varying operating parameters of the ultrafast laser device to ablate a getter layer using the control module;(ii) selectively varying the operating parameters of the ultrafast laser device to ablate at least a portion of a first device layer to create features therein; and(iii) selectively varying the operating parameters of the ultrafast laser device to ablate at least a portion of a second device layer to create features therein;(b) before an application of ultrafast laser pulse determining one or more physical attributes of a particular layer using the analysis module by receiving layer information from one or more sensing devices that determine the physical attributes of the layers; and(c) determining the physical attributes of additional layers and selectively ablating the additional layer; wherein the selective ablation of the layered material prepares the layered material for subsequent processing, wherein applying the ultrafast laser output to the first device layer, the second device layer, or any additional layers occurs substantially simultaneously relative to applying the ultrafast laser output to a getter layer, wherein the first device layer, the second device layer, and any additional layers disposed below an ablated portion of the getter layer. 9. The method according to claim 8, wherein the subsequent processing comprises dry etching, wet etching, plasma etching, doping, implantation, deposition, cleaving, laser modifications with laser fracturing, mechanical cleaving, texturing, or a combinations thereof. 10. The method according to claim 8, wherein the using the laser controller application to control a selectively adjustable ultrafast laser output comprises cutting, cleaving, slotting, or otherwise processing materials wherein the processing materials are crystalline, polycrystalline and multicrystalline sintered materials. 11. The method according to claim 8, wherein the using the laser controller application to control a selectively adjustable ultrafast laser output includes selectively adjusting one or more of a pattern, a pulse width, a pulse energy level, a focal point, a frequency, a laser repetition rate, a fill spacing, a number of passes, and a combination thereof. 12. The method according to claim 11, wherein the pulse width is selected from any of a femtosecond, a picosecond, nanosecond, and combinations thereof. 13. The method according to claim 8, wherein the layered material comprises a base layer, the first device layer and the getter layer covering an uppermost device layer of the one or more device layers. 14. The method according to claim 13, wherein the getter layer comprises a metallic alloy or a polymer. 15. The method according to claim 13, wherein the base layer comprises an organic or an inorganic material.
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