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Fluid distribution members and/or assemblies 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01J-037/32
  • C23C-016/452
  • C23C-016/455
출원번호 US-0051713 (2011-03-18)
등록번호 US-9129778 (2015-09-08)
발명자 / 주소
  • Huseinovic, Armin
  • Berry, Ivan L.
출원인 / 주소
  • LAM RESEARCH CORPORATION
인용정보 피인용 횟수 : 1  인용 특허 : 118

초록

A fluid distribution member assembly for use in a substrate processing system includes a fluid distribution member having a central portion and a perimeter portion. The fluid distribution member defines at least one slot formed there-through and the at least one slot extends along a non-radial path

대표청구항

1. A fluid distribution member assembly for use in a substrate processing system, comprising: a fluid distribution member having a central portion and a perimeter portion, wherein the fluid distribution member is configured to (i) be arranged between a plasma generator assembly and a process chamber

이 특허에 인용된 특허 (118)

  1. Arai Sakae (Yokohama JPX), Activated gas generator.
  2. Kinnard, David W.; Richardson, Daniel B., Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system.
  3. Kinnard, David W.; Richardson, Daniel B., Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system.
  4. Yudovsky Joseph ; Tsai Kenneth ; Ghanayem Steve ; Sherstinsky Semyon, Apparatus and method for delivering a gas.
  5. Moran John C., Apparatus and method for endpoint detection in non-ionizing gaseous reactor environments.
  6. Chen, Chen-An; Gelatos, Avgerinos; Yang, Michael X.; Xi, Ming; Hytros, Mark M., Apparatus and method for plasma assisted deposition.
  7. Sneh, Ofer; Seidel, Thomas E.; Galewski, Carl, Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition.
  8. Mardian, Allen P.; Rodriguez, Santiago R., Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes.
  9. Zhao Jun ; Sajoto Talex ; Selyutin Leonid ; Dornfest Charles ; Wolff Stefan ; Luo Lee ; Juco Eller, Apparatus for ceramic pedestal and metal shaft assembly.
  10. Park Jeong-hyuck,KRX ; Choi Jong-wook,KRX, Baffle plate of dry etching apparatus for manufacturing semiconductor devices.
  11. Egley, Fred D.; Kang, Michael S.; Chen, Anthony L.; Kuo, Jack; Shih, Hong; Outka, Duane; Morel, Bruno, Bare aluminum baffles for resist stripping chambers.
  12. Krautzig Joachim,CHX ; Nguyen Uy-Liem,CHX, Burner.
  13. Han Nianci ; Shih Hong ; Yuan Jie ; Lu Danny ; Ma Diana, Ceramic composition for an apparatus and method for processing a substrate.
  14. Kawata Yoshinobu (Fukuoka JPX) Minami Toshihiko (Fukuoka JPX), Chemical vapor deposition method, and chemical vapor deposition treatment system and chemical vapor deposition apparatus.
  15. Goessler Gerhard (Oberderdingen DEX), Cooking apparatus.
  16. Edgar, Bradley L.; Martin, Richard J.; Barkdoll, Michael P., Device for thermally processing a gas stream, and method for same.
  17. Lim Joung-hyun,KRX ; Chae Hee-Sun,KRX, Dry etching apparatus having upper and lower electrodes with grooved insulating rings or grooved chamber sidewalls.
  18. Watabe Masahiro (Kawasaki JPX), Dry process apparatus using plural kinds of gas.
  19. Osepchuk John M. (Concord MA) Simpson James E. (Waltham MA), Energy seal for high frequency energy apparatus.
  20. Ashish Bhatnagar ; Kartik Ramaswamy ; Tony S. Kaushal ; Kwok Manus Wong ; Shamouil Shamouilian, Erosion resistant gas energizer.
  21. Cook Roger D. (Manteca CA) Milina Daniel V. (Los Gatos CA), Etching system having simplified diffuser element removal.
  22. Schmitt Jerome J. (New Haven CT) Halpern Bret L. (Bethany CT), Evaporation system and method for gas jet deposition of thin film materials.
  23. Hongoh Toshiaki,JPX, Flat antenna having openings provided with conductive materials accommodated therein and plasma processing apparatus using the flat antenna.
  24. Toshiaki Hongoh JP, Flat antenna having rounded slot openings and plasma processing apparatus using the flat antenna.
  25. Huffman Maria ; Sakthivel Palanikumaran ; Zimmerman Teresa ; Noble Thomas, Fluorine assisted stripping and residue removal in sapphire downstream plasma asher.
  26. Rose Alan D. (Wylie TX) Kennedy ; III Robert M. (Taylors SC), Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor.
  27. Fangli Hao ; Rajinder Dhindsa, Gas distribution apparatus for semiconductor processing.
  28. Harald Herchen ; David Palagashvili ; Dmitry Lubomirsky ; Alex Schreiber, Gas distribution plate.
  29. Choi, Soo Young; Shang, Quanyuan; Greene, Robert I.; Hou, Li, Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition.
  30. Kinnard, David W., Gas distribution plate assembly for providing laminar gas flow across the surface of a substrate.
  31. Su Yuh-Jia (Cupertino CA), Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing.
  32. Maydan Dan ; Mak Steve S. Y. ; Olgado Donald ; Yin Gerald Zheyao ; Driscoll Timothy D. ; Papanu James S. ; Tepman Avi, Gas injection slit nozzle for a plasma process reactor.
  33. Reif L. Rafael (Newton MA) Fonstad ; Jr. Clifton G. (Arlington MA), Growth of epitaxial films by chemical vapor deposition.
  34. Nguyen, Tue, High flow conductance and high thermal conductance showerhead system and method.
  35. Vinogradov Georgy,JPX ; Yoneyama Shimao,JPX, High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phas.
  36. Tateda Koichi (Yao JPX), High-frequency oven having a browning unit.
  37. Collison, Wenli Z.; Barnes, Michael S.; Ni, Tuqiang O.; Berney, Butch; Vereb, Wayne W.; McMillin, Brian K., Inductively coupled plasma downstream strip module.
  38. Huang Steve S. (Richardson TX) Davis Cecil J. (Greenville TX) Jucha Rhett B. (Celeste TX) Loewenstein Lee M. (Plano TX), Low particulate reliability enhanced remote microwave plasma discharge device.
  39. Gerald Yin ; Peter Loewenhardt ; Arnold Kholodenko ; Hong Chin Shan ; Chii Lee ; Dan Katz, Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma.
  40. Pang Ben ; Cheung David ; Taylor ; Jr. William N. ; Raoux Sebastien ; Fodor Mark, Method and apparatus for cleaning a vacuum line in a CVD system.
  41. Yu Chen-Hua D. (Allentown PA), Method and apparatus for forming integrated circuit layers.
  42. Fink, Steven T., Method and apparatus for improved baffle plate.
  43. Fink,Steven T; Strang,Eric J; Laflamme, Jr.,Arthur H; Wallace,Jay; Hyland,Sandra, Method and apparatus for improved baffle plate.
  44. Srivastava,Aseem Kumar; Sawin,Herbert Harold; Sakthievel,Palanikumaran, Method and apparatus for micro-jet enabled, low energy ion generation and transport in plasma processing.
  45. Srivastava, Aseem Kumar; Sawin, Herbert Harold; Sakthievel, Palanikumaran, Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing.
  46. Thomas Nowak ; Sebastien Raoux ; Dave Silvetti ; Stefan Wolff ; Russ Newman ; Imad Yousif ; Ned Matthew, Method and apparatus for optical detection of effluent composition.
  47. Aitchison Kenneth Allen, Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors.
  48. Powell, Gary, Method and device utilizing real-time gas sampling.
  49. Omstead Thomas R. ; Wongsenakhum Panya ; Messner William J. ; Nagy Edward J. ; Starks William ; Moslehi Mehrdad M., Method and system for dispensing process gas for fabricating a device on a substrate.
  50. Qingyan Han ; Palani Sakthivel ; Ricky Ruffin ; Andre Cardoso, Method for detecting an endpoint for an oxygen free plasma process.
  51. John H. Whealton ; Gregory R. Hanson ; John M. Storey ; Richard J. Raridon ; Jeffrey S. Armfield ; Timothy S. Bigelow ; Ronald L. Graves, Method for generating a highly reactive plasma for exhaust gas aftertreatment and enhanced catalyst reactivity.
  52. Whealton John H. ; Hanson Gregory R. ; Storey John M. ; Raridon Richard J. ; Armfield Jeffrey S. ; Bigelow Timothy S. ; Graves Ronald L., Method for generating a highly reactive plasma for exhaust gas aftertreatment and enhanced catalyst reactivity.
  53. Jang Syun-Ming (Hsin-Chu TWX) Yu Chen-Hua (Keeling City TWX), Method for improving the process uniformity in a reactor by asymmetrically adjusting the reactant gas flow.
  54. Balasubramaniam, Vaidyanathan; Hatamura, Yasunori; Hagiwara, Masaaki; Nishimura, Eiichi; Inazawa, Kouichiro, Method for removing photoresist and etch residues.
  55. Shortes Samuel R. (Lewisville TX) Penn Thomas C. (Richardson TX), Method for removing photoresist layer from substrate by ozone treatment.
  56. Xia Li-Qun ; Pokharrna Himanshu ; Lim Tian-Hoe, Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process.
  57. Van Buskirk Peter C. ; Fair James A. ; Kotecki David E., Method of delivering source reagent vapor mixtures for chemical vapor deposition using interiorly partitioned injector.
  58. Lee Changhun ; Singh Vikram ; Yang Yun-Yen Jack, Methods and apparatus for passivating a substrate in a plasma reactor.
  59. Raoux Sebastien ; Tanaka Tsutomu ; Kelkar Mukul ; Ponnekanti Hari ; Fairbairn Kevin ; Cheung David, Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment.
  60. Bucksbaum Arnold M. (Cedar Rapids IA), Microwave oven door seal system.
  61. Bucksbaum Arnold M. (Cedar Rapids IA) Simpson James E. (Coralville IA), Microwave oven shelf.
  62. Kamarehi Mohammad ; Pingree Richard ; Shi Jianou ; Cox Gerald, Microwave plasma discharge device.
  63. Fujimura Shuzo (Tokyo JPX), Microwave plasma processing apparatus.
  64. Okamoto Yukio (Sagamihara JPX), Microwave plasma source apparatus.
  65. Brcka, Jozef, Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing.
  66. Tsai, Kenneth; Bach, Tung; Pham, Quyen, Monitoring an effluent from a chamber.
  67. Oluseyi, Hakeem; Sarfaty, Moshe, Monitoring of film characteristics during plasma-based semi-conductor processing using optical emission spectroscopy.
  68. Ballance David S. ; Bierman Benjamin ; Tietz James V., Multi-zone gas flow control in a process chamber.
  69. Pham,Xuyen Ngoc, Multi-zone shower head for drying single semiconductor substrate.
  70. Carrea Giovanni ; Warrick Brian D., Noble gas purifier with single purifier vessel and recuperative heat exchanger.
  71. Han Qingyuan ; Berry Ivan ; Sakthivel Palani ; Ruffin Ricky ; Dahimene Mammoud, Oxygen free plasma stripping process.
  72. Pang Ben ; Cheung David ; Taylor ; Jr. William N. ; Raoux Sebastien ; Fodor Mark, Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment.
  73. Becknell, Alan Frederick; Buckley, Thomas James; Ferris, David; Pingree, Jr., Richard E.; Sakthivel, Palanikumaran; Srivastava, Aseem Kumar; Waldfried, Carlo, Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith.
  74. Kamarehi Mohammad (No. Potomac MD) Simpson James E. (Gaithersburg MD), Plasma asher with microwave trap.
  75. Srivastava, Aseem Kumar; Sakthivel, Palanikumaran; Buckley, Thomas James, Plasma ashing apparatus and endpoint detection process.
  76. Han, Qingyuan; Berry, Ivan; Sakthivel, Palani; Waldfried, Carlo, Plasma ashing process.
  77. Moslehi Mehrdad M. (Dallas TX), Plasma density controller for semiconductor device processing equipment.
  78. Srivastava Aseem K. ; Pingree Richard E. ; Pellicier Victor, Plasma discharge device with dynamic tuning by a movable microwave trap.
  79. Tomita Kazushi (Kawaguchi JPX) Ito Yoshikazu (Yamanashi JPX) Hirano Motohiro (Hachioji JPX) Nozawa Akira (Nirasaki JPX) Matsuo Hiromitsu (Shirane JPX) Iimuro Shunichi (Yamanashi JPX) Tozawa Shigeki (, Plasma etching system.
  80. Tomita Kazushi (Kawaguchi JPX) Ito Yoshikazu (Yamanashi-ken JPX) Hirano Motohiro (Hachioji JPX) Nozawa Akira (Nirasaki JPX) Matsuo Hiromitsu (Shirane-machi JPX) Iimuro Shunichi (Yamanashi-ken JPX) To, Plasma etching system and plasma etching method.
  81. Koshiishi Akira,JPX ; Ogasawara Masahiro,JPX ; Hirose Keizo,JPX ; Nagaseki Kazuya,JPX ; Tomoyoshi Riki,JPX ; Aoki Makoto,JPX, Plasma processing apparatus.
  82. Koshimizu Chishio,JPX, Plasma processing apparatus.
  83. Lee, Young Jong; Choi, Jun Young; Jo, Saeng Hyun; Hwang, Young-Joo; Kim, Jong-Cheon, Plasma processing apparatus.
  84. Ogawa, Unryu; Sato, Takayuki, Plasma processing apparatus.
  85. Ohmi, Tadahiro; Hirayama, Masaki, Plasma processing apparatus.
  86. Sato Yasue (Kawasaki JPX), Plasma processing apparatus for etching, ashing and film-formation.
  87. Kim Chang-sik,KRX ; Park Jin-ho,KRX ; Moon Kyeong-seob,KRX ; Seo Young-ho,KRX ; Lim Tae-hyung,KRX ; Choi Byung-mook,KRX ; Kim Ju-ho,KRX, Plasma processing apparatus protected from discharges in association with secondary potentials.
  88. Higuchi Kimihiro,JPX ; Koshimizu Chishio,JPX ; Koshi Ryoichiro,JPX ; Iwata Teruo,JPX ; Ishii Nobuo,JPX, Plasma processing method, plasma processing apparatus, and plasma generating apparatus.
  89. Fink, Steven T., Plasma processing system and baffle assembly for use in plasma processing system.
  90. Spencer John E. (Plano TX) Miller Scott S. (Austin TX) Sutton Woodie J. (Denton TX) Hoff Andrew M. (State College PA), Plasma product treatment apparatus and methods and gas transport systems for use therein.
  91. Mahawili Imad, Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing.
  92. Paul B. Comita ; Rekha Ranganathan ; David K. Carlson ; Dale R. DuBois ; Hali J. L. Forstner, Point-of-use exhaust by-product reactor.
  93. Kartik Ramaswamy ; Kwok Manus Wong ; Ashish Bhatnagar ; Mehran Moalem ; Tony S. Kaushal ; Shamouil Shamouilian, Porous ceramic liner for a plasma source.
  94. Kakimoto, Akinobu; Oshimo, Kentaro; Matsudo, Masahiko, Processing device using shower head structure and processing method.
  95. Schmitz Johannes J. (Sunnyvale CA) Scholz Frederick J. (Fremont CA) Turner Norman L. (Gloucester MA) Chow Raymond L. (Cupertino CA) Uher Frank O. (Los Altos CA) Kang Sien G. (Tracy CA) Selbrede Steve, Purge gas in wafer coating area selection.
  96. Hao Fangli ; Dhindsa Rajinder ; Pourhashemi Javad, Reaction chamber component having improved temperature uniformity.
  97. Koai Keith ; Johnson Mark ; Chang Mei ; Lei Lawrence Chung, Reactor useful for chemical vapor deposition of titanium nitride.
  98. Mahawili, Imad, Reactor with remote plasma system and method of processing a semiconductor substrate.
  99. Gulati, Suresh T.; Wilcox, David I., Refractory burner nozzle with stress relief slits.
  100. Mohammad Kamarehi ; Gerald M. Cox, Remote plasma mixer.
  101. Fairbairn Kevin ; Ponnekanti Hari K. ; Cheung David ; Tanaka Tsutomu,JPX ; Kelka Malcal, Remote plasma source.
  102. Gakhar Ved P. (Louisville KY) Pennington ; Jr. Donald C. (Louisville KY) Byrley David H. (Louisville KY) Grishin Alexander (Louisville KY) Dossett Richard A. (Louisville KY) Schmidt Manfred W. (Louis, Saw blade.
  103. Tanaka Sumi,JPX ; Nakatsuka Sakae,JPX ; Tachibana Mitsuhiro,JPX, Shower head.
  104. Fujikawa Yuichiro (Yamanashi-ken JPX) Hatano Tatsuo (Yamanashi-ken JPX) Murakami Seishi (Yamanashi-ken JPX), Shower head and film forming apparatus using the same.
  105. Kuwada, Tomonao; Yoneda, Masatake; Nishimori, Takashi, Shower head structure and cleaning method thereof.
  106. Takagi, Toshio; Sakuma, Takeshi; Kato, Yuji; Matsumoto, Kenji, Shower head structure for processing semiconductor.
  107. Tsuji, Naoto; Fukuda, Hideaki; Arai, Hiroki; Morisada, Yoshinori; Kobayashi, Tamihiro, Shower plate having projections and plasma CVD apparatus using same.
  108. Szapucki Matthew Peter ; Kulkaski Richard ; Hadley Trevor J. ; Santorelli Mark Anthony ; Stoever Robert H., Showerhead electrode for plasma processing.
  109. Williams Norman (Newark CA), Showerhead for uniform distribution of process gas.
  110. Schwartz Craig N. (Torrance CA) Kich Rolf (Redondo Beach CA), Stress relieved iris in a resonant cavity structure.
  111. Herchen Harald ; Brown William ; Nzeadibe Ihi ; Kujaneck Dan, Substrate process chamber and processing method.
  112. Shang Quanyuan ; Sun Sheng ; Law Kam S. ; Beer Emanuel, Surface-treated shower head for use in a substrate processing chamber.
  113. Tue Nguyen, Three-dimensional showerhead apparatus.
  114. Colpo, Pascal; Rossi, Fran.cedilla.ois, Uniform gas distribution in large area plasma source.
  115. Tran Dean ; Carberry David M. ; Boger David H. ; Vendura ; Jr. George J. ; Hirschberg Alan M., Vacuum chuck for holding thin sheet material.
  116. Hiroyuki Kawasaki JP; Hiroshi Sobukawa JP, Vacuum exhaust system.
  117. Nakatsuka, Sakae, Vacuum processing apparatus.
  118. Halpin Michael W. ; Hawkins Mark R. ; Foster Derrick W. ; Vyne Robert M. ; Wengert John F. ; van der Jeugd Cornelius A. ; Jacobs Loren R., Wafer support system.

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  1. Masuda, Hideaki; Yamada, Nobuhide, Image processing apparatus with improved slide printout based on layout data.
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