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Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effect

Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.

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1. A method of forming a monolithic integrated sensor device comprising: forming a microelectromechanical system (MEMS) device on a non-silicon-on-insulator (non-SOI) substrate by: forming a monocrystalline sacrificial layer on only a first portion of the non-SOI substrate,depositing a first silicon

1. A method of forming a monolithic integrated sensor device comprising: forming a microelectromechanical system (MEMS) device on a non-silicon-on-insulator (non-SOI) substrate by: forming a monocrystalline sacrificial layer on only a first portion of the non-SOI substrate,depositing a first silicon layer on the monocrystalline sacrificial layer and on a second portion of the non-SOI substrate different from the first portion,forming a cavity in the monocrystalline sacrificial layer via at least one release aperture in the first silicon layer, andsealing the cavity by depositing a second silicon layer; andforming a transistor on the second portion of the non-SOI substrate, the transistor comprising at least a portion of the second silicon layer. 2. The method of claim 1, further comprising depositing a cavity passivation layer in the cavity. 3. The method of claim 1, wherein forming the monocrystalline sacrificial layer comprises patterning the monocrystalline sacrificial layer. 4. The method of claim 1, wherein forming the transistor further comprises utilizing the monocrystalline sacrificial layer. 5. The method of claim 1, wherein sealing the cavity further comprises depositing the second silicon layer that comprises monocrystalline silicon. 6. The method of claim 1, wherein forming a MEMS device comprises forming a sensor device. 7. The method of claim 6, wherein forming a sensor device comprises forming at least one of a capacitive sensor device or a piezoresistive sensor device. 8. The method of claim 1, wherein forming the transistor comprises utilizing one of a CMOS or BICMOS process. 9. The method of claim 1, wherein forming a MEMS device further comprises filling a portion of the cavity via at least one release aperture. 10. The method of claim 1, further comprising forming an isolation trench between the MEMS device and the transistor. 11. The method of claim 1, wherein depositing the second silicon layer comprises: depositing the second silicon layer on a first portion of the first silicon layer having been deposited on the monocrystalline sacrificial layer, anddepositing the second silicon layer on a second portion of the first silicon layer having been deposited on the second portion of the non-SOI substrate. 12. The method of claim 1, wherein the monocrystalline sacrificial layer has a substantially uniform thickness. 13. The method of claim 1, wherein the second silicon layer includes a step formed between a first portion of the second silicon layer disposed on the first portion of the non-SOI substrate and a second portion of the second silicon layer disposed on the second portion of the non-SOI substrate. 14. The method of claim 13, wherein the step corresponds to an edge of the monocrystalline sacrificial layer. 15. The method of claim 1, wherein the monocrystalline sacrificial layer is the only sacrificial layer used in the formation of the MEMS device. 16. A monolithic integrated sensor device comprising: a microelectromechanical system (MEMS) sensor formed on a first portion of a non-silicon-on-insulator (non-SOI) substrate, the MEMS sensor comprising: a monocrystalline sacrificial layer deposited on only the first portion of the non-SOI substrate,a cavity formed in the monocrystalline sacrificial layer and having an aperture, anda silicon layer deposited on the monocrystalline sacrificial layer and a second portion of the non-SOI substrate, wherein the silicon layer seals the aperture; anda transistor arranged laterally with respect to the MEMS sensor and comprising a portion of the silicon layer formed on the second portion of the non-SOI substrate. 17. The device of claim 16, wherein the silicon layer comprises a monocrystalline silicon layer. 18. The device of claim 16, further comprising an isolation trench formed between the MEMS sensor and the transistor. 19. The device of claim 16, wherein the MEMS sensor is one of a capacitive sensor or a piezoresistive sensor. 20. The device of claim 16, further comprising a cavity passivation layer inside the cavity. 21. The device of claim 16, wherein the silicon layer comprises a membrane. 22. A method of forming a monolithic integrated sensor device comprising: obtaining a non-silicon-on-insulator (non-SOI) substrate having a first and second portions;forming an implanted layer on the first and second portions of the non-SOI substrate;patterning a monocrystalline sacrificial layer on only a first portion of the implanted layer having been formed on the corresponding first portion of the non-SOI substrate;depositing a first silicon layer on the monocrystalline sacrificial layer and a second portion of the implanted layer formed on the second portion of the non-SOI substrate, the first silicon layer comprising at least one release aperture;etching the monocrystalline sacrificial layer through the release aperture to form a cavity;sealing the cavity by depositing a second silicon layer on the first silicon layer; andforming a monolithic integrated sensor device by forming a transistor on the second portion of non-SOI substrate utilizing the second silicon layer. 23. The method of claim 22, further comprising forming a microelectromechanical system (MEMS) sensor by carrying out the obtaining, forming, patterning, depositing, etching and sealing. 24. The method of claim 22, wherein forming a MEMS sensor further comprises forming at least one of a capacitive MEMS sensor or a piezoresistive MEMS sensor.