Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/20
H01L-029/10
H01L-021/02
H01L-021/8238
H01L-021/8252
H01L-021/8258
H01L-027/06
H01L-029/66
H01L-021/762
H01L-029/04
H01L-029/78
출원번호
US-0180254
(2008-07-25)
등록번호
US-9153645
(2015-10-06)
발명자
/ 주소
Li, Jizhong
Lochtefeld, Anthony J.
출원인 / 주소
Taiwan Semiconductor Manufacturing Company, Ltd.
대리인 / 주소
Slater & Matsil, L.L.P.
인용정보
피인용 횟수 :
2인용 특허 :
139
초록
A method of forming a semiconductor structure includes forming an opening in a dielectric layer, forming a recess in an exposed part of a substrate, and forming a lattice-mismatched crystalline semiconductor material in the recess and opening.
대표청구항▼
1. A method of forming a structure, the method comprising: providing a dielectric sidewall, on a substrate, with a height h, the substrate comprising a first crystalline semiconductor material and a top surface having a first crystal orientation, the dielectric sidewall defining an opening with a fi
1. A method of forming a structure, the method comprising: providing a dielectric sidewall, on a substrate, with a height h, the substrate comprising a first crystalline semiconductor material and a top surface having a first crystal orientation, the dielectric sidewall defining an opening with a first width w exposing a portion of the substrate;defining, in the exposed portion of the substrate, a recess with a maximum depth d and a recessed surface comprising a second crystal orientation, the recessed surface defining a second width of the recess at the top surface of the substrate and defining a third width of the recess at a depth below the top surface of the substrate, the second width being greater than the third width; andforming, in the recess and adjoining the dielectric sidewall, a second crystalline semiconductor material having a lattice mismatch with the first crystalline semiconductor material, the lattice mismatch creating defects in the second crystalline semiconductor material, the defects terminating at a distance H above a deepest point of the recess, wherein H is less than or equal to h+d. 2. The method of claim 1, wherein H is less than or equal to d. 3. A method of forming a structure, the method comprising: providing a dielectric sidewall, on a substrate, with a height h, the substrate comprising a first crystalline semiconductor material and a top surface having a first crystal orientation, the dielectric sidewall defining an opening with a first width w exposing a portion of the substrate;defining, in the exposed portion of the substrate, a recess with a maximum depth d and a recessed surface comprising a second crystal orientation, the recessed surface defining a second width of the recess at the top surface of the substrate and defining a third width of the recess at a depth below the top surface of the substrate, the second width being greater than the third width; andforming, in the recess and adjoining the dielectric sidewall, a second crystalline semiconductor material having a lattice mismatch with the first crystalline semiconductor material, the lattice mismatch creating defects in the second crystalline semiconductor material, the defects terminating at a distance H above a deepest point of the recess, wherein H is less than or equal to w. 4. A method of forming a structure, the method comprising: providing a dielectric sidewall, on a substrate, with a height h, the substrate comprising a first crystalline semiconductor material and a top surface having a first crystal orientation, the dielectric sidewall defining an opening with a first width w exposing a portion of the substrate;defining, in the exposed portion of the substrate, a recess with a maximum depth d and a recessed surface comprising a second crystal orientation, the recessed surface defining a second width of the recess at the top surface of the substrate and defining a third width of the recess at a depth below the top surface of the substrate, the second width being greater than the third width; andforming, in the recess and adjoining the dielectric sidewall, a second crystalline semiconductor material having a lattice mismatch with the first crystalline semiconductor material, the lattice mismatch creating defects in the second crystalline semiconductor material, the defects terminating at a distance H above a deepest point of the recess, wherein a ratio of h+d to w is greater than or equal to one. 5. A method of forming a structure, the method comprising: providing a dielectric sidewall, on a substrate, with a height h, the substrate comprising a first crystalline semiconductor material and a top surface having a first crystal orientation, the dielectric sidewall defining an opening with a first width w exposing a portion of the substrate;defining, in the exposed portion of the substrate, a recess with a maximum depth d and a recessed surface comprising a second crystal orientation, the recessed surface defining a second width of the recess at the top surface of the substrate and defining a third width of the recess at a depth below the top surface of the substrate, the second width being greater than the third width; andforming, in the recess and adjoining the dielectric sidewall, a second crystalline semiconductor material having a lattice mismatch with the first crystalline semiconductor material, the lattice mismatch creating defects in the second crystalline semiconductor material, the defects terminating at a distance H above a deepest point of the recess, wherein the recess has a v-shaped profile. 6. A method of forming a structure, the method comprising: providing a dielectric sidewall, on a substrate, with a height h, the substrate comprising a first crystalline semiconductor material and a top surface having a first crystal orientation, the dielectric sidewall defining an opening with a first width w exposing a portion of the substrate;defining, in the exposed portion of the substrate, a recess with a maximum depth d and a recessed surface comprising a second crystal orientation, the recessed surface defining a second width of the recess at the top surface of the substrate and defining a third width of the recess at a depth below the top surface of the substrate, the second width being greater than the third width; andforming, in the recess and adjoining the dielectric sidewall, a second crystalline semiconductor material having a lattice mismatch with the first crystalline semiconductor material, the lattice mismatch creating defects in the second crystalline semiconductor material, the defects terminating at a distance H above a deepest point of the recess, wherein the first crystal orientation is (100), and the second crystal orientation is not (100). 7. The method of claim 6, wherein the second crystal orientation is (111). 8. A method of forming a structure, the method comprising: forming an opening in a dielectric layer, the dielectric layer being over a substrate, the substrate comprising a first crystalline material, the opening exposing an exposed surface of a top surface of the substrate;forming a recess in the substrate in the exposed surface, the recess having a recess sidewall that forms an obtuse angle with the top surface of the substrate; andforming a second crystalline material in the recess and in the opening, the second crystalline material being lattice mismatched with the first crystalline material. 9. The method of claim 8, wherein the lattice mismatch creates defects in the second crystalline material, the defects terminating at a distance above a deepest point of the recess, the distance being less than or equal to a height of the dielectric layer from the top surface of the substrate plus a maximum depth of the recess. 10. The method of claim 8, wherein the lattice mismatch creates defects in the second crystalline material, the defects terminating at a distance above a deepest point of the recess, the distance being less than or equal to a maximum depth of the recess. 11. The method of claim 8, wherein the lattice mismatch creates defects in the second crystalline material, the defects terminating at a distance above a deepest point of the recess, the distance being less than or equal to a width of the opening. 12. The method of claim 8, wherein a ratio of a height of the dielectric layer from the top surface of the substrate plus a maximum depth of the recess to a width of the opening is greater than or equal to one. 13. The method of claim 8, wherein the recess has a v-shaped profile. 14. The method of claim 8, wherein the top surface of the substrate has a first crystal orientation of (100), and the recessed sidewall has a second crystal orientation of not (100). 15. The method of claim 14, wherein the second crystal orientation is (111).
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